• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2003년도 한국우주과학회보 제12권2호
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• pp.101-101
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• 2003

다목적 실용위성 1호에 탑재된 EOC(Electro-Optical Camera)는 2,000년부터 현재까지 한반도 인근 및 세계의 주요 육지 지역을 관측하고 있다. DOC는 크게 광학부(Sensor Assembly)와 전자부(Electronics Assembly)로 구성되어 있으며, 지상으로부터 입사하는 광 정보를 디지털 신호로 재구성하여 PDTS(Payload Data Transmission System)을 통해 지상으로 전송한다. EOC 광학부는 2,592개의 CCD(Charge-Coupled Device) 센서들로 구성된 선형 시스템이며, push-broom 주사 방식으로 구동된다. 한편, EOC의 임무 전, 후로 Aperture Cover Mechanism에 의해 EOC의 덮개를 덮은 상태로 짧은 시간동안 촬영을 수행, 획득된 영상 역시 지상으로 전송한다. 이러한 영상들은 EOC 영상에 포함되어 있는 암전류(Dark Current)에 대한 간접적인 정보를 제공하며, Dark Calibration Data로 정의된다. Dark Calibration Data는 지상에서 수신된 후, EOC 영상에 대한 복사 보정에 이용된다. 본 연구에서는 EOC Dark Calibration Data에 대한 분석을 통해, EOC 영상 내의 잡음 성분을 분석한다.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.10-14
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• 2003

In this paper, we have introduced the x-ray detector built with a CsI:Na scintillation layer deposited on amorphous selenium. To determine the thickness of the CsI:Na layer, we have estimated the transmission spectra and the absorption of continuous x-rays in diagnostic range by using computer simulation (MCNP 4C). A x-ray detector with 65 ${\mu}m$-CsI:Na/30 ${\mu}m$-Se layer has been fabricated by a thermal evaporation technique. SEM and PL measurements have been performed. The dark current and x-ray sensitivity of the fabricated detector has been compared with that of the conventional a-Se detector with 100 ${\mu}m$ thickness. Experimental results show that both detectors exhibit a similar dark current, which was of a low value below $400 pA/cm^2$ at 10 V/${\mu}m$. However, the CsI:Na-Se detector indicates high x-ray sensitivity, roughly 1.3 times that of a conventional a-Se detector. Furthermore, a CsI:Na-Se detector with an aluminium reflective layer shows a 1.8 times higher x-ray sensitivity than an a-Se detector. The hybrid type detector proposed in this work exhibits a low dark current and high x-ray sensitivity, and, in particular, excellent linearity to the x-ray exposure dose.

• 한국정보통신학회논문지
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• 제11권2호
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• pp.322-329
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• 2007

본 논문에서는 디지털 의료 영상 및 진단 분야 그리고 산업용으로도 활용 가능한 싱글 포톤 계수형 영상센서를 $0.18{\mu}m$ triple-well CMOS(Complementary Metal Oxide Semiconductor) 공정을 사용하여 설계하였다. 설계된 Readout 칩용 싱글 픽셀은 디지털 X-ray 이미지 센서모듈을 간단화 하기 위해 단일 전원전압을 사용하였으며, Preamplifier의 출력 전압인 signal voltage(${\Delta}Vs$)를 크게 하기 위해 Folded Cascode CMOS OP amp를 이용한 Preamplifier를 설계하였으며, 기존의 Readout 칩 외부에서 인가하던 threshold voltage를 Readout 칩 내부에서 생성해 줄 수 있도록 Externally Tunable Threshold Voltage Generator 회로를 새롭게 제안하였다. 그리고, Photo Diode에서 발생하는 Dark Current Noise를 제거하기 위한 Dark Current Compensation 회로를 제안하였으며, 고속 counting이 가능하고, layout 면적이 작은 15bit LFSR(Linear Feedback Shift Resister) Counter를 설계하였다.

• 천문학논총
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• 제30권2호
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• pp.309-313
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• 2015

If the present universe is slightly open then pre-inflation curvature would appear as a cosmic dark-flow component of the CMB dipole moment. We summarize current cosmological constraints on this cosmic dark flow and analyze the possible constraints on parameters characterizing the pre-inflating universe in an inflation model with a present-day very slightly open ${\Lambda}CDM$ cosmology. We employ an analytic model to show that for a broad class of inflation-generating effective potentials, the simple requirement that the observed dipole moment represents the pre-inflation curvature as it enters the horizon allows one to set upper and lower limits on the magnitude and wavelength scale of pre-inflation fluctuations in the inflaton field and the curvature parameter of the pre-inflation universe, as a function of the fraction of the total initial energy density in the inflaton field. We estimate that if the current CMB dipole is a universal dark flow (or if it is near the upper limit set by the Planck Collaboration) then the present constraints on ${\Lambda}CDM$ cosmological parameters imply rather small curvature ${\Omega}_k{\sim}0.1$ for the pre-inflating universe for a broad range of the fraction of the total energy in the inflaton field at the onset of inflation. Such small pre-inflation curvature might be indicative of open-inflation models in which there are two epochs of inflation.

• 대한전자공학회논문지SD
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• 제41권3호
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• pp.15-30
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• 2004

본 연구는 게이트 매몰형 단채널 GaAs MESFET의 암전류 특성과 광전류 특성을 해석적으로 모델링하였다. 모델링 결과, 광조사에 의한 중성영역내의 광 전도도의 증가 보다 공핍층 내의 광 기전력 발생에 따른 공핍층 폭의 감소효과로 인한 드레인 전류의 증가가 크게 일어남을 보이고 있다. 중성영역의 케리어 밀도 변화는 1차원 케리어 연속 방정식으로부터 도출하였으며, 광 기전력 도출은 게이트-공핍층 경계면의 광전류와 열전자 방출전류가 상쇄되는 조건으로 도출하였다. 드레인전압 인가에 따른 단채널 소자의 채널 방향의 전계효과를 고려한 2차원 Poisson 방정식의 해법을 제안하였다. 모델링 결과를 시뮬레이션한 결과, 적절한 암전류 및 광전류 특성에 대한 통합적 모델이 얻어짐을 확인하였다.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• 한국재료학회지
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• 제12권6호
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• 한국광학회지
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• 제7권4호
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• pp.440-444
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• 1996

10Gbps급 이상의 광통신에 적합한 성능을 가지는 InAlAs/InGaAs 다중양자우물 구조(MQW) 애벌런치 광다이오드(APD)를 제작하였다. 본 논문에서는 MBE로 성장된 에피구조에서 높은 농도로 도핑된 field butter layer의 Be dopant의 다중양자우물 구조로의 indiffusion이 소자의 암전류 특성과 이득 특성에 이치는 영향을 분석하였다. Be의 indiffusion은 작은 양으로도 소자의 특성에 큰 영향을 끼칠 수 있음이 보여졌으며 spacer layer를 삽입함으로써 높은 대역폭을 유지하면서 낮은 암전류 특성을 나타내는 소자를 제작함으로써 space layer의 삽입이 indiffusion의 영향을 효과적으로 막을 수 있음을 보였다.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1998년도 추계학술대회
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• pp.293-294
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• 1998

In this paper, the electric properties of amorphous selenium specimen has been investigated. Amorphous selenium was thermally evaporated on the glass plate which had been deposited onto the interface by aluminium as an electrode. On the surface of the amorphous selenium, the aluminium electrode was deposited again in order to make an unit cell for dark current measurement. The dark current was measured while applying the bias voltage across the selenium layer in the range of 0V-2500 Volts. The leakage property of the amorphous selenium was significantly low at even high voltage range so it has good advantage as a X-ray receptor for digital radiography. For further study, the C-V curves measurement according to thicker amorphous selenium layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.3-4
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• 2008

Photovoltaic module consists of serially connected solar cell which has low voltage characteristics. But, the other way, the whole current flow of PV module is restricted by lowest current of one solar cell. For the experiment, we make PV module composing the solar cells that have short circuit current difference of 0%, 1%, 3% and 5%. Using Light I-V and Dark I-V measurements, electrical characteristic parameters like Isc(short-circuit current), Voc(open-circuit voltage), Rs(series resistance), Rsh(shunt resistance) are analyzed. PV module of low current characteristics has electrical stress from other modules. And, such a module has a tendency of hot-spot suffering which leads degradation.