• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.327-334
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• 2013

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material ($Al_{0.2}Ga_{0.8}Sb$) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the $1^{st}$ satellite superlattice peak from the X-ray diffraction was around 45 arcsec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12 eV) at 80 K while under an applied bias of -1.4 V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.0{\times}10^{-2}A/cm^2$ at 80 K and with a bias -1.5 V. The responsivity was 0.58 A/W at $7.5{\mu}m$ at 80 K and with a bias of -1.5 V.

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.111-116
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• 2002

Electrochemical scanning tunneling microscopy was employed to study the evolution of surface morphology during electrochemical preparation of Si(111)-H from Si(111) oxide. Anodic dark current of cyclic voltammogram in 0.2M $NH_4F$ solution (pH 4.7) decreased as the number of cycles increased and remained nearly constant after the second cycle. Then, the Si(111) oxide was entirely stripped, which was followed by H termination on the Si(111) surface. Hydrides at kink and step sites were etched more rapidly than on the terrace, which remained triangle pits with [112] oriented steps where existed stable monohydride. Then, triangle pits deepened. During chronomamperometry at 0.4V anodic dark current shoulder appeared and decreased slowly, indicated the stripping of Si(111) oxide and the formation of stable (112) oriented steps with monohydride. Additionally, the etching mechanism of Si(111)-H in 0.2M $NH_4F(pH 4.7)$ solution at +0.4V was discussed.

• Journal of Astronomy and Space Sciences
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• v.35 no.3
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• pp.201-210
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• 2018

The characterization of detectors installed in space- and ground-based instruments is important to evaluate the system performance. We report the development of a detector performance test system for astronomical applications using the Andor iKon M CCD camera. The performance test system consists of a light source, monochromator, integrating sphere, and power meters. We adopted the Czerny-Tuner monochromator with three ruled gratings and one mirror, which covers a spectral range of 200-9,000 nm with a spectral resolution of ~1 nm in the visible region. Various detector characteristics, such as the quantum efficiency, sensitivity, and noise, can be measured in wide wavelength ranges from the visible to mid-infrared regions. We evaluated the Korea Astronomy and Space Science Institute (KASI) detector performance test system by using the performance verification of the Andor iKon-M CCD camera. The test procedure includes measurements of the conversion gain ($2.86e^-/ADU$), full well capacity ($130K\;e^-$), nonlinearity, and pixel defects. We also estimated the read noise, dark current, and quantum efficiency as a function of the temperature. The lowest measured read noise is $12e^-$. The dark current at 223 K was determined to be $7e^-/s/pix$ and its doubling temperature is $5.3^{\circ}C{\pm}0.2^{\circ}C$ at an activation energy of 0.6 eV. The maximum quantum efficiency at 223 K was estimated to be $93%{\pm}2%$. We proved that the quantum efficiency is sensitive to the operating temperature. It varies up to 5 % in the visible region, while the variation increases to 30 % in the near-infrared region. Based on the comparison of our results with the test report by the vendor, we conclude that our performance test results are consistent with those from the vendor considering the test environment. We also confirmed that the KASI detector performance test system is reliable and our measurement method and analysis are accurate.

• Journal of the Korean Society of Radiology
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• v.3 no.1
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• pp.17-21
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• 2009

The Recently, large area matrix-addressed image detectors are investigated for X-ray imaging with medical diagnostic and other applications. In this paper, a new flat panel gas detector for diagnostic X-ray imaging is proposed, and its characteristics are investigated. The research of flat panel gas detector is not exist at all. Because of difficulty to inject gas against to atmospheric pressure. So almost gas detector made by chamber shape. We made flat panel sample by display technique. (ex: PDP, Fed, etc.) The experimental measurements, the transparent electrodes, dielectric layer, and the MgO protection layer were formed in front glass. And, the X-ray phosphor layer and address electrodes are formed in the rare glass. The dark current, the x-ray sensitivity and linearity as a function of electric field were measured to investigate the electrical properties. From the results, the stabilized dark current density and the significant x-ray sensitivity were obtained. And the good linearity as a function of exposure dose was showed in wide diagnostic energy range. These results means that the passive matrix-addressed flat panel gas detector can be used for digital x-ray imaging.

• Korean Journal of Environmental Biology
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• v.23 no.3 s.59
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• pp.221-227
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• 2005

The effects of light and $CO_2$ on the electrophysiological characteristics of guard cells in the intact leaf and isolated epidermis have been investigated. Fast hyperpolarization of guard cell apoplastic PD in the intact leaf was recorded reaching up to around 7 mV and 20 mV in response to light and $CO_2$. Whenever the experiments were attempted with isolated epidermis, there was no response to light and $CO_2$. In order to determine the influence of the mesophyll cells, the apoplastic PD of guard cells in isolated epidermis was measured in the presence of the mesophyll supernatant or the control medium. The apoplastic PD in isolated epidermis was hyperpolarized to -7mV, changing from -22mV to -29mV at 40 min. But, when isolated epidermis was incubated with the supernatant from mesophyll cells incubated in the light, the apoplastic PD in isolated epidermis was hyperpolarized to -19 mV, changing from -22 mV to -40.5 mV. $CO_2$ also caused a change of 0.1 to 0.3 pH unit in the intact leaf. However, this change was absent in isolated epidermis. A vibrating probe was used to detect the change in electrical currents at the surface of excised intact leaves and isolated epidermis. The reading of excised intact leaves in the dark was $0.5\muA\;cm^{-2},$ remaining steady until illuminated. Light increased the current on the surface of excised leaves to about $0.8\muA\;cm^{-2},$. However, light had no effect in the current on the surface of isolated epidermis. Apoplastic pH changes across the stomatal complex in response to light and dark were measured both in the intact leaves and isolated epidermis over the same time period using pH micro-electrodes. The guard cell wall of intact leaf was acidified to 2.5 pH unit, falling from pH 7.5 to pH 5.0 in the first 10 min. in the light. At the same time the guard cell wall pH of isolated epidermis fell from pH 7.5 to pH 7.0 at 10 min. The guard cell wall pH of isolated epidermis incubated in the mesophyll supernatant fell from pH 7.6 to pH 6.7 at 10 min. Likewise, It could be imagined that an electrical signal, chemicals and hormones propagated from the mesophyll in response to light and $CO_2$ could control a fast stomatal response.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.432-435
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• 2002

The ultimate study of this research is to improve the properties of digital X-ray receptor based on amorphous selenium. There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. But each two systems have strength and weakness. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. ln this study, we investigated the electrical characteristic of multi-layer$(CaWO_4+a-Se)$ as a photoconductor according to the changing iodine composition ratio. The iodine composition ratio of a-Se compound is classified into 5 different kinds which have 30ppm, 100ppm, 300ppm, 500ppm, 700ppm and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 700ppm iodine showed good characteristic of $2.53nA/cm^2$ dark current and $479nC/cm^2{\cdot}mR$ net charge at $3V/{\mu}m$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1448-1452
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• 2004

In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.88.1-88.1
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• 2010

Organic dyes, because of their many advantages, such as high molar extinction coefficients, convenience of customized molecular design for desired photophysical and photochemical properties, inexpensiveness with no transition metals contained, and environment-friendliness, are suitable as photosensitizers for the Dye-sensitized Solar Cell (DSSC). The efficiency of DSSC based on metal-free organic dyes is known to be much lower than that of Ru dyes generally, but a high solar energy-to-electricity conversion efficiency of up to 8% in full sunlight has been achieved by Ito et al. using an indoline dye. This result suggests that smartly designed and synthesized metal-free organic dyes are also highly competitive candidates for photosensitizers of DSSCs with their advantages mentioned above. Recently, the performance of DSSC based on metal-free organic dyes has been remarkably improved by several groups. We had reported the novel organic dye with double electron acceptor chromophore, which was a new strategy to design an efficient photosensitizer for DSSC. To verify the strategy, we synthesized organic dyes whose geometries, electronic structures and optical properties were derived from preceding density functional theory (DFT) and time-dependent density functional theory (TD-DFT) calculations. In this paper, we successfully synthesized the chromophore containing multi-acceptor push-pull system from triphenylamine with thiophene moieties as a bridge unit. Organic dyes with a single electron acceptor and double acceptor system were also synthesized for comparison purposes. The photovoltaic performances of these dyes were compared, and the recombination dark current curves and the incident photon-to-current (IPCE) efficiencies were also measured in order to characterize the effects of the multi-anchoring groups on the open-circuit voltage and the short-circuit current. In order to match specifications required for practical applications to be implemented outdoors, light soaking and thermal stability tests of these DSSCs, performed under $100mWcm^{-2}$ and $60^{\circ}C$ for 1000h.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.88.2-88.2
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• 2010

Dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies and low cost processes compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photo excited dyes into the conduction band of the semiconductor electrode. The oxidized dye is reduced by the hole injection into either the hole conductor or the electrolyte. Thus, the light harvesting effect of dye plays an important role in capturing the photons and generating the electron/hole pair, as well as transferring them to the interface of the semiconductor and the electrolyte, respectively. We used the organic fluorescence materials which can absorb short wavelength light and emit longer wavelength region where dye sensitize effectively. In this work, the DSSCs were fabricated with fluorescence materials added $TiO_2$ photo-electrode which were sensitized with metal-free organic dyes. The photovoltaic performances of fluorescence aided DSSCs were compared, and the recombination dark current curves and the incident photon-to-current (IPCE) efficiencies were measured in order to characterize the effects of the additional light harvesting effect in DSSC. Electro-optical measurements were also used to optimize the fluorescence material contents on TiO2 photo-electrode surface for higher conversion efficiency (${\eta}$), fill factor (FF), open-circuit voltage (VOC) and short-circuit current (ISC). The enhanced light harvesting effect by the judicious choice/design of the fluorescence materials and sensitizing dyes permits the enhancement of photovoltaic performance of DSSC.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.