• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.16-21
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• 1994

A 3-terminal pin-type photosensor with gate contrail is fabricated using standard silicon CMOS IC process. The photosensor of a $100{\mu}m{\times}120{\mu}m$ size has dark current less than 1nA and its breakdown voltage is -14V with a depletion capacitance 0.75 pF at -5V reverse bias. Responsivity at 0V gate voltage is 0.25A/W at $0.633{\mu}m$ wavelength, 0.19A/W at $0.805{\mu}m$. Responsivity increases with increasing gate voltage. The integrated circuit of photosensor and CMOS inverter shows $22K{\Omega}$ transimpedance and photocurrent of $90{\mu}A$ switchs the output state of digital inverter without additional amplifier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.416-419
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• 2002

There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.207-207
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• 2008

ZnO is one of the widely utilized n-type semiconducting oxide materials in the field of optoelectronic devices. For its application to the fabrication of promising ultraviolet (UV) photodetectors, ZnO with various structures has been extensively studied. However, study on the photodetectors using zero-dimensional (0-D) ZnO nanoparticle is scarce while the 0-D nanoparticle structure has many advantages compared to the other dimensional structures for absorption of light. In this study, the photocurrent characteristics of ZnO nanoparticles were investigated through a simply pasting of the nanoparticles across the pre-patterned electrodes. Then the photoluminescence (PL) characteristic, photocurrent response spectrum, photo- and dark-current and photoresponse spectrum were investigated with a He-Cd laser and an Xe lamp. An dominant PL peak of the ZnO nanoparticles was located at the wavelength of 380 nm under the illumination of 325-nm wavelength light. The ratio of photocurrent to dark current (on/off ratio) is as high as 106 which is considerable value for promising photodetectors. On the other hand, the time constants in photoresponse were relatively slow. The reasons of the high on/off ratio and relatively slow photoresponse characteristic will be discussed.

• Journal of the Korea Fashion and Costume Design Association
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• v.16 no.4
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• pp.99-116
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• 2014

The purpose of this study was to examine the state of scrub wearing among scrub uniforms medical staff. The results of the research is the following. First, As for the state of scrub uniforms, they wore scrubs only while they gave medical treatment and took care of routine work. Regarding the design of their current scrubs, type 1 was dominant, and the most common color was dark sky blue. Second, Concerning considerations for scrub design, they answered that scrubs should be designed to give no inconvenience during job performance. As for the image, they placed the most importance in a clean image due to hygiene. In relation to preference for color, pattern and materials, they had the most preference for dark blue, no pattern and materials that would not easily be contaminated. Third, As to preference for the length of the top, they were most fond of hip length, and short sleeves were their favorite length of sleeve. Concerning the design of the front and the back of the top, they had a liking for a box style with no straight cutting line. As for the design of the neckline, hem and pocket of the top, they had the most preference for round neckline, square bottom and round patch pocket respectively. Fourth, when the design preference of the respondents was analyzed, there were a difference between the men and the women in preference for neckline design. The women had a liking for round neck, whereas the men were fond of V neck. And the women showed a higher preference for rubber waistband than the men for the waist design of the pants. No gender differences were found in preference for color, pattern and the length of the top.

• Journal of The Korean Astronomical Society
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• v.56 no.2
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• pp.293-299
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• 2023

The Wide-Angle Polarimetric Camera (PolCam) is installed on the Korea's lunar orbiter, Danuri, which launched on August 5, 2022. The mission objectives of PolCam are to construct photometric maps at a wavelength of 336 nm and polarization maps at 461 and 748 nm, with a phase angle range of 0°-135° and a spatial resolution of less than 100 m. PolCam is an imager using the push-broom method and has two cameras, Cam 1 and Cam 2, with a viewing angle of 45° to the right and left of the spacecraft's direction of orbit. We conducted performance tests in a laboratory setting before installing PolCam's flight model on the spacecraft. We analyzed the CCD's dark current, flat-field frame, spot size, and light flux. The dark current was obtained during thermal / vacuum test with various temperatures and the flat-field frame data was also obtained with an integrating sphere and tungsten light bulb. We describe the calibration method and results in this study.

• Journal of the Korean Society of Radiology
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• v.5 no.2
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• pp.97-101
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• 2011

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.

• Journal of the Korean Society of Radiology
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• v.3 no.1
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• pp.11-15
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• 2009

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using a multi-layer technique to decrease dark current. High efficiency materials in substitution for Amorphous Selenium(a-Se) have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using PN junction or Hetero junction already used as solar cell, semiconductor. Particle-In -Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in Particle-In -Binder method. To make up for the weak points, multi-layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity, signal linearity is measured to evaluate multi-layer radiation sensor material.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.270-273
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• 2000

We have fabricated and analyzed photodiodes for optical link with Si pin structures. As the results of experiment, the web patterned photodiode(type C) with $p^{+}$-guard ring showed low junction capacitance of 6~7 pF at $V_{R}$=-5V and high separation ability for optical signal(dark current : $\leq$ 5 nA, optical signal current : $\geq$ 340 nA) due to the small effective $p^{+}$-n junction area and the expanded electric field region. The fabricated Si pin photodiode can be applicable for detecting an optical signal with the wavelength of about 660~670 nm. It can also be integrated with the twin well CMOS structure to develope an one chip based optical receiver IC. IC.C.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.11a
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• pp.163-168
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• 2004

The improvement of perspectives on dark and limited underground space could be an important factor in successful underground space development. Current trend in the apartment underground parking lot requires not only quantitatively energy efficient design and operation, but also qualitative improvement of the space. For this, we need to consider two factors: Firstly, to understand the characteristics of the fluorescent lamp. Secondly, to improve the uniformity ratio of illuminance. In winter season, a way to keep the uniformity and a method not to lower the indoor illuminance level by cold ambient air. Therefore, a change in interval and arrangement of the lighting fixtures is required. Also, in their operation, current time-fixed control method needs to be changed into the control that method considers the use pattern.

• International journal of advanced smart convergence
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• v.1 no.1
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• pp.61-64
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• 2012

The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of $6.99cm^2/Vs$, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of $2.45{\times}10^8$. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of $5.74{\times}10^2$. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.