• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.11
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• pp.1-11
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• 1997

The transient current components of the dRAM are analyzed and the sensing current, data path operation current and DC leakage current are revealed to be the major curretn components. It is expected that the supply voltage of less than 1.5V with low VT MOS witll be used in multi-giga bit dRAM. A low voltage dual VT self-timed CMOS logic in which the subthreshold leakage current path is blocked by a large high-VT MOS is proposed. An active signal at each node of the nature speeds up the signal propagation and enables the synchronous DRAM to adopt a fast pipelining scheme. The sensing current can be reduced by adopting 8 bit prefetch scheme with 1.2V VDD. Although the total cycle time for the sequential 8 bit read is the same as that of the 3.3V conventional DRAM, the sensing current is loered to 0.7mA or less than 2.3% of the current of 3.3V conventional DRAM. 4 stage pipeline scheme is used to rduce the power consumption in the 4 giga bit DRAM data path of which length and RC delay amount to 3 cm and 23.3ns, respectively. A simple wave pipeline scheme is used in the data path where 4 sequential data pulses of 5 ns width are concurrently transferred. With the reduction of the supply voltage from 3.3V to 1.2V, the operation current is lowered from 22mA to 2.5mA while the operation speed is enhanced more than 4 times with 6 ns cycle time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.117-118
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• 2008

High-pressure deuterium annealing process is proposed and investigated for enhanced electrical and reliability properties of 512Mb DDR2 DRAM without increase in process complexity. High pressure deuterium annealing (HPDA) introduced during post metal anneal (PMA) improves not only DRAM performance but also reliability characteristics of MOSFET. Compared with a control sample annealed in a conventional forming gas, additional annealing in a high pressure deuterium ambient at $400^{\circ}C$ for 30 min decreased G1DL current and junction leakage. The improvements can be explained by deuterium incorporation at $SiO_2$/Si substrate interface near isolation trench edge.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.121-126
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• 2004

In this paper, the effects of the ozone oxidation of the landing polycrystalline silicon on the cell contact resistance of the DRAM device were studied. For this study, the ozone oxidation of the landing polycrystalline silicon layer was performed under various conditions, which was followed by the normal DRAM processes. Then, the cell contact resistance and $t_{WR}$ (write recovery time) of the devices were measured and analyzed. The experimental results showed that the cell contact resistance was more significantly increased for higher temperature of oxidation, longer time of oxidation, and higher concentration of ozone in the oxidation furnace. In addition, the TEM cross-sectional micrographs clearly showed that the oxide layer at the interface between the landing polycrystalline silicon layer and the plug polycrystalline silicon layer was increased by the ozone oxidation. Furthermore, the rate of the device failure due to too large write recovery time was also found to be well correlated with the increase of the cell contact resistance.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.103-110
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• 2019

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.9A
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• pp.1442-1450
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• 1999

In this paper, we present an efficient hardware architecture for the frame memory of the MPEG-2 video encoder. Both the total size of internal buffers and the number of logic gates are reduced by the proposed memory map which can provide an effective interface between MPEG-2 video encoder and the external DRAM. Furthermore, the proposed scheme can reduce the DRAM access time. To realize the frame memory hardware,$0.5\mu\textrm{m}$, VTI, vemn5a3 standard cell library is used. VHDL simulator and logic synthesis tool are used for hardware design and RTL (register transfer level) function verification. The frame memory hardware emulator of the proposed architecture is designed for gate-level function verification. It is expected that the proposed frame memory hardware using VHDL can achieve suitable performance for MPEG-2 MP@ML.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.6
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• pp.1185-1194
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• 1997

It is necessary to control the frame memory to capture, edit and display images. This paper presents the free-scale image capture processor size of which is user-defined, compared to the conventional image capture processor size of which is fixed 1/2, 1/4 and full size. User-defined scale data is fed into this system, which generates the gating pulses and gates the inputted image data. This system also controls the 4M DRAM instead of frame meamory. And stored gated image data are displayed on the TV monitor. We designed the scalable image capture parts and DRAM controller with ACTEL FPGAs, simulated the circuits with Viewlogic and fusing ACTEL A1020B chips. We confirmed the whole operation with beadboard which composed of "Philips TV Chipset" and designed FPGA chips.PGA chips.

• Proceedings of the Korean Society of Computer Information Conference
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• 2017.01a
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• pp.143-144
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• 2017

최근 그래픽 처리 장치는 DRAM에 대한 접근을 줄이고자 여러 메모리 계층을 사용하고 있다. GPGPU의 L2 캐쉬는 요청 데이터의 타입에 따라 별도로 접근하는 L1 메모리와 다르게 레이턴시가 긴 DRAM에 접근하기 전에 모든 데이터 타입이 접근 가능한 캐쉬이다. 본 논문에서는 애플리케이션에서 명시하는 다양한 데이터 타입에 대하여 접근 및 적재를 허용하는 L2 캐쉬를 오직 텍스쳐 데이터만을 허용하도록 하여 변화하는 성능을 분석하고자 한다. 본 실험을 위해 텍스쳐 데이터 이외의 데이터 타입은 L2 캐쉬를 바이패스하여 바로 DRAM에 접근하도록 구조를 변경한다. 실험을 통한 분석 결과 텍스쳐 데이터만을 허용하는 경우 대부분의 벤치마크에서 성능 감소가 발생하여 기존 구조대비 평균 5.58% 감소율을 확인하였다. 반대로, 본 논문의 실험 환경에서의 L2 캐쉬의 적중률이 낮은 애플리케이션인 needle은 불필요한 L2 접근을 바이패스 함으로써 전체적인 성능 증가를 이끌어낸 것으로 분석된다.

• Journal of KIISE:Computer Systems and Theory
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• v.32 no.2
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• pp.85-94
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• 2005

It has been reported and verified in many design experiences that a judicious utilization of the page and burst access modes supported by DRAMs contributes a great reduction in not only the DRAM access latency but also DRAM's energy consumption. Recently, researchers showed that a careful arrangement of data variables in memory directly leads to a maximum utilization of the page and burst access modes for the variable accesses, but unfortunately, found that the problems are not tractable, consequently, resorting to simple (e.g., greedy) heuristic solutions to the problems. In this parer, to improve the quality of existing solutions, we propose 0-1 ILP-based techniques which produce optimal or near-optimal solution depending on the formulation parameters. It is shown that the proposed techniques use on average 32.2%, l5.1% and 3.5% more page accesses, and 84.0%, 113.5% and 10.1% more burst accesses compared to OFU (the order of first use) and the technique in [l, 2] and the technique in [3], respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.5
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• pp.114-124
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• 2014

HEVC is a state-of-the-art video coding standard developed by JCT-VC. HEVC provides about 2 times higher subjective coding efficiency than H.264/AVC. One of the main goal of HEVC development is to efficiently coding UHD resolution video so that HEVC is expected to be widely used for coding UHD resolution video. Decoding such high resolution video generates a large number of memory accesses, so a decoding system needs high-bandwidth for memory system and/or internal communication architecture. In order to determine such requirements, this paper presents an analysis of the memory access complexity for HEVC decoder. we first estimate the amount of memory access performed by software HEVC decoder on an embedded system and a desktop computer. Then, we present the memory bandwidth models for HEVC decoder by analyzing the data flow of HEVC decoding tools. Experimental results show the software decoder produce 6.9-40.5 GB/s of DRAM accesses. also, the analysis reveals the hardware decoder requires 2.4 GB/s of DRAM bandwidth.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.179-179
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• 2003

현재 차세대 메모리로 연구되고 있는 것 중 가장 각광 받는 것은 PRAM 이다. MRAM의 경우 복잡한 공정 때문에 상용화에 많은 어려움이 따르는데 반해 PRAM은 DRAM과 유사한 구조를 가지고 있기 때문에 기존 DRAM의 공정라인을 사용할 수 있다는 장점을 가지고 있다. 하지만 PRAM은 높은 작동전류가 필요하다는 단점을 가지고 있다. 따라서 PRAM이 상용화 되기 위해서는 2mA 이하의 작동전류에서 상변환이 일어나야 한다. 여기서 말하는 상변환이란 결정질 상태를 비정질 상태로 변환 시키는 것을 의미한다. 본 연구에서는 우선 8F$^2$ 크기(F=0.15$\mu\textrm{m}$)의 DRAM 단위소자 메모리 구조를 이용하여 lT/lRPCRAM 모델을 구축하였다. 구축된 모델을 이용하여 요구되는 작동전류(2mA이하)에서의 PRAM의 온도 분포를 시뮬레이션을 통하여 예측하였다. 또한 단위소자를 구성하는 재료의 물성 변화가 소자 내부의 온도 분포에 미치는 영향을 분석하였다.