• 연구논문집
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• s.33
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.379-387
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• 1996

본 연구에서는 GaAs 소자제작 및 epi-layer 성장 공정에 있어 이용되어지는 HCI, H3PO4, 탈이온수(de-ionized water:DIW)를 통한 습식제정후 공기중 노출에 따른 오염을 최소화하여 표면상태 변화를 진성적(intrinsic)으로 관찰하고자 모든 세정처리를 아르곤 가스(argon gas)로 분위기가 유지되는 glove box에서 수행하였으며, 표면조성 및 결합상태 변화에 대한 관찰은 X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 통해 이루어졌다. 고진공하에서 GaAs를 벽개하여 관찰함으로써 Ga이 대기중 산소이온과 우선적으로 결합함을 알 수 있었고, 이런 GaAs 표면의 반응성에 대한 고찰을 바탕으로 습식세정에 따른 화학반응 기구가 제시 되어졌다. HCI 및 H3PO4/DIW/HCI처리후 CI-이온의 Ga 이온과의 반응에 의한 Ga-CI결합의 형성과 As 산화물의 높은 용해도에 따른 As 산화물의 완전한 제거 및 식각전 초기(bare)GaAsvyaus에 존재하는 원소(elemental)As 상태의 식각후 잔류가 관찰되어졌다. 또 HCI, H3PO4/DIW/HCI 처리하고 DIW로 세척후 표면상태 변화를 관찰한 결과, DIW처리에 의해 elemental As 상태가 증가함을 알 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.812-816
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• 2000

It is very important to understand the correlation of between inter dielectric(ILD) CMP process and various facility factors supplied to equipment to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD-CMP process was studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyze various facilities supplied at supply system. With facility shortage of D.I water(DIW) pressure, we introduced an adding purified $N_2$(P$N_2$)gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and P$N_2$gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and P$N_2$gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.31-34
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• 2000

It is very important to understand the correlation of between inter layer dielectric(ILD) CMP process and various facility factors supplied to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD CMP process were studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyzed various facilities supplied at supply system. With facility shortage of D.I. water(DIW) pressure, we introduced an adding purified $N_2(PN_2)$ gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and PN2 gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and PN2 gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Journal of Electrochemical Science and Technology
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• v.14 no.3
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• pp.283-292
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• 2023

Currently, spray coating has attracted interest in the mass production of anode catalyst layers for proton exchange membrane water electrolysis (PEMWE). The solvent in the spray ink is a critical factor for the catalyst dispersion in ink, the microstructure of the catalyst layer, and the PEMWE performance. Herein, various pure organic solvents were examined as a substitute for conventional isopropanol-deionized water (IPA-DIW) mixture for ink solvent. Among the polar solvents that exhibited better IrO₂ dispersion over nonpolar solvents, 2-butanol (2-BuOH) was selected as a suitable candidate. The PEMWE single cells were fabricated using 2-BuOH at various ionomer contents, spray nozzle types, and drying temperatures, and their performance was compared to the cells fabricated using a conventional IPA-DIW mixture. The PEMWE single cells with 2-BuOH solvent showed good performances comparable to the conventional IPA-DIW mixture case and highly durable performances under accelerated degradation tests.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.378-379
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• Journal of Powder Materials
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• v.19 no.1
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• pp.55-59
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• 2012

In this work, the silver nanoparticles have been synthesized by electrical explosion of wire in three liquid mediums: deionized water (DIW), polyvinylpyrrolidone (PVP) and sodium dodecyl benzene sulfonate (SDBS) solutions. Absorption in the UV-visible region of these suspensions was measured in the range of 300-800 nm. A surface plasmon peak was observed at ~400 nm in all suspensions in measured wavelength range. Particle size was analyzed by transmission electron microscope. It showed that the particles had nearly spherical shape in all samples. The average particle sizes prepared in DIW, PVP and SDBS solution were 37, 31 and 27 nm, respectively. Stability of the suspensions was estimated by multiple light scattering method. The presence of PVP and SDBS surfactants in the exploding medium resulted in enhanced stability of the silver suspensions.

• Bulletin of the Korean Chemical Society
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• v.18 no.7
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• pp.737-740
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• 1997

The influence of cyclic treatments with H2O2/DIW (1 : 10) and HF/DIW (1 : 100) on the roughness of silicon surface in the wet chemical processing was investigated by atomic force microscopy (AFM). During the step of the SC-1 cleaning, there is a large increase in roughness on the silicon surface which will result in the poor gate oxide breakdown properties. The roughness of the silicon wafer after the SC-1 cleaning step was reduced by cyclic treatments of hydrogen peroxide solution and hydrofluoric acid solution instead of HF-only cleaning. AFM images after each step clearly illustrated that the average roughness of silicon surface after three times treatments with H2O2 and HF solutions was reduced by 10 times compared with that after the SC-1 cleaning step.