• Journal of Pharmaceutical Investigation
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• v.18 no.4
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• pp.209-215
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• 1988

The three-dimensional structures of piroxicam crystallized from two different solvents, toluene and toluene/hexane mixture respectively, are proved identical: $C_{15}H_{13}N_3O_4S,\;M\;=\;331.35$, monoclinic, a = 7.128(1), b = 15.146(2), c = 13.956(2) ${\AA},\;{\beta}=\;97.33(1)^{\circ},\;V\;=\;1494.37{\AA}^{3},\;Dx\;=\;1.472\;g/cm^{3},\;Z\;=\;4,\;space\;group\;P2_{1}/c,\;Mo\;K{\alpha}(\lambda=\;0.71073\;{\AA})$, F(000) = 688, T = 295 K, R = 0.0611 for 1993 unique observed reflections. The thiazine ring exhibits a half chair conformation. An amide group is involved in an intramolecular hydrogen bond to the hydroxy group, O(17)-H(17)${\cdots}O(15){\AA}$. The molecule is planar within 2 ${\AA}$ with the interplanar angle $127.9(4)^{\circ}$ between pyridine and benzene rings. A molecular chain parallel to [011] is formed by two intermolecular hydrogen bonds N(16)-H(6)${\cdots}O(11)$ and C(6)-H(6)${\cdots}O(11)$, and the molecular chains are held together by van der Waals forces.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.271.2-271.2
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• 2013

열화학 기상 증착법은 반도체 산업에서 대면적으로 소자를 양산할 수 있는 방법 중의 하나로서, 그래핀, 이황화 몰리브덴과 같은 이차원 물질의 합성법으로 널리 이용되고 있다. 이런 이차원 물질은 층수에 따라 그 물성이 변화하므로, 층수 조절이 가능한 합성법의 필요성이 대두되고 있다. 열화학 기상 증착법으로 이차원 물질을 합성할 경우, 주요 변수로 성장 온도와 촉매 금속이 있으며 이를 적절히 조절함으로서 합성되는 그래핀의 결정성과 층수의 조절이 가능하다[1-3]. 또한, 이차원 반도체 물질로 전계효과 트랜지스터를 제작하는 경우, 얇은 두께로 인하여 표면의 환경에 민감하게 되므로 게이트 절연체가 중요한 문제로 대두되고 있으며, 이런 현상을 해결하고자 질화붕소(BN)과 같은 이차원 절연물질에 관심이 집중되고 있다. 본 연구에서는 이차원 절연체인 질화붕소의 표면 위에 그래핀을 합성하고자 하였다. 반데발스 성장법(van der Waals epitaxy growth method)으로 1. "BN/ SiO2" 2. "BN/ Ni" 3. "BN/ Cu"의 세 가지 기판을 이용하여 그래핀을 합성하였다. 합성된 그래핀의 결정성 및 층수를 확인하기 위해 라만 스펙트럼과 투과전사 현미경을 통하여 분석하였다. 또한, 이 방법으로 "그래핀/ 질화붕소/ 그래핀"과 같은 구조의 소자를 제작하여 전계효과 트랜지스터 특성을 살펴보았다.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.21 no.1
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• pp.15-29
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• 2009

Most breakwater armor blocks are designed by using Hudson's or van der Meer's formula. The minimum weight of armor blocks is calculated by equating the resistance to the load in each formula. The larger value is then chosen as the design weight. In this study, we have performed reliability analyses for thus designed breakwater armor blocks of 12 trade harbors and 8 coastal harbors in Korea. The probability of failure calculated by the reliability analysis provides a criterion for evaluating the stability of armor blocks. The calculated probability of failure was almost same for all the breakwaters so that we were able to quantitatively evaluate the safety level of armor blocks of existing breakwaters. We also found that the safety factor used in the deterministic design method and the probability of failure in the reliability design method show a linear relationship. Therefore the probability of failure of existing breakwaters can be quantitatively calculated from the safety factors. The calculated probability of failure could also be used for determining the target probability of failure in the future.

• Applied Biological Chemistry
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• v.40 no.1
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• pp.80-84
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• 1997

Series of new chiral N-substituted benzotriazol-1-yl derivatives were synthesized and their fungicidal activities in vitro against gray mold(Botrytis cinerea), black spot(Alternaria kikuchiana) and phytophthora blight(Phytophthora capsici) were measured by the agar medium dilution method. The substituents effects between the fungicidal activities (obs. $pI_{50}$) and a various physicochemical parameters of phenoxy or thiophenoxy group(X) & alkyl or phenyl group(Y) were analyzed by the multiple regression technique. From the analyzed substituent effects, the structure-activity relationship(SAR) equations shows that the antifungal activities depend on the parameters for the optimal molecular hydrophobicity($({\Sigma}logP)_{opt}$), Van der Waals (${\Sigma}Vw$>0) volume(${\AA}^3$) and inductive constant with electron withdrawing group(${\sigma}_I$,Y>0). The activity in affected by the inductive effect (${\sigma}_I$,Y>${\sigma}_g$X) of Y-group rather than the X-group. The phenoxy substituents, 1, showed higher antifungal activity tn the thiophenoxy substituents, 2. For 1, polar substituent constant(${\sigma}^*$) was an important factor in determining the activity. And the tribromomethyl substituent, 1g showed the highest activity against the tee fungi.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.51-63
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• 1995

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.60-70
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• 1995

Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.

• Journal of the Korean Chemical Society
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• v.17 no.2
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• pp.105-114
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• 1973

The crystal structure of morpholinothiosemicarbazide has been determined by single crystal X-ray analysis. The lattice constants are a = 4.19(2), b = 6.56(2) and c = 26.67(4)${\AA}$. The unit cell contains 4 molecules and the space group is$P2_12_12_1$. The atomic parameters have been refined by least-squares method to a final R value of 0.07, based on the 651 observed reflexions. The amino nitrogen atom forms hydrogen bonds to the sulfur atoms of the other molecules related by the two-fold screw axis parallel to the a-axis, the distances of the hydrogen bonds being 3.48 and 3.49${\AA}$. On the other hand, the imino nitrogen atom forms a hydrogen bond to the amino nitrogen atom of the other molecule related by the two-fold screw axis parallel to the a-axis, the distance of the hydrogen bond being 3.04${\AA}$. These three hydrogen bonds arrange the molecules around the two-fold screw axis. Apart from the hydrogen bonding system the structure is held together by van der Waals forces.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.44-56
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• 1996

CuInTe2 synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of CuInTe2 were grown with the vertical Bridgman technique. The structure, Hall effect of the crystals were measured in the temperature range 30 to 293K. Both the polycrystals and single crystals of CuInTe2 were tetragonal in structure. The lattice constants of the polycrytals were measured as a=6.168Å and c=12.499Å, with c/a=2.026, these of the single crystals were measured as a=6.186Å and c=12.453Å, with c/a=2.013. The growth plane of the oriented single crystals was confirmed to be a (112) plane from the back-reflection Laue patterns. The Hall effect of the CuInTe2 single crystals was measured with the method of van der Pauw The Hall data of the samples measured at room temperature showed a carrier concentration of 2.14×1023holes/m3, a conductivity of 739.58Ω-1m-1, and a mobility of 2.16×10 -2m 2/V·s for the sample perpendicular to the c-axis. Values of 1.51×1023holes/m3, 717.55Ω-1m-1, and 2.97×10-2 m2/V·s were obtained for the sample parallel to the c-axis. The Hall coefficients for the samples both perpendicular and parallel to the c-axis in the temperature range 30K to 293K were always positive values. Thus the CuInTe2 single crystal was determined to be a p-type semiconductor.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.3-10
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• 1993

Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.81-86
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• 1993

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.