• Journal of Advanced Navigation Technology
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• v.14 no.5
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• pp.767-774
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• 2010

Due to advantages of NAND flash memory such as non-volatility, low access latency, low energy consumption, light weight, small size and shock resistance, it has become a better alternative over traditional magnetic disk drives, and has been widely used. Traditional DBMSs including mobile DBMSs may run on flash memory without any modification by using Flash Translation Layer (FTL), which emulates a random access block device to hide the characteristics of flash memory such as "erase-before-update". However, most existing FTLs are optimized for file systems, not for DBMSs, and traditional DBMSs are not aware of them. Also, traditional DBMSs do not consider the characteristics of flash memory. In this paper, we propose a flash-conscious storage system for DBMSs that utilizes flash memory as a main storage medium, and carefully put the characteristics of flash memory into considerations. The proposed flash-conscious storage system exploits log records to avoid costly update operations. It is shown that the proposed storage system outperforms the state.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1935-1936
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• 2008

본 논문은 High speed image를 획득하기 위하여 CMOS Image Sensor를 사용한 고속카메라 구현에 관한 연구이다. Image Sensor로는 CCD Image Sensor와 CMOS Image Sensor가 있으며 CMOS Image Sensor는 CCD Image Sensor에 비해 전력소모가 적고 주변회로의 내장으로 소형화 할 수 있는 장점이 있다. 고속카메라는 충돌 테스트, 에어벡 제어 등의 자동차 분야와 골프 자세 교정 장치와 같은 스포츠 분야, 탄도 방향 측정 장비 등의 국방 분야 등 여러 분야에 많이 사용되고 있다. 본 논문에서 구현한 고속카메라 시스템은 CMOS Image Sensor를 사용하여 1280 * 1024의 해상도로 초당 약 500 frames의 영상을 획득할 수 있다. 또한 CMOS Image Sensor를 제어하고 획득한 이미지를 저장할 수 있도록 FPGA와 DDR2 메모리를 사용하고 저장된 데이터를 PC로 전송하기 위한 Camera Link 모듈 그리고 PC에서 카메라를 제어할 수 있도록 RS-422 통신기능 등으로 구성되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.3-5
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• 2000

1.8V,4Gb DDR SDRAM설계 및 제작을 수행하였다. DRAM동작 시 발생하는 Bit Line간 CouplingNoise를 보상하기 위한 Twisted Open Bit Line 구조를 제안하였다. Low Voltage Operation으로 인한 Bit Line Sense Amplifier 의 동작 저하를 보상하기 위한 BL S/A Pre-Sensing 방식 및 Reference Bit Line Voltage Calibration 구조를 제안하였다. Chip면적 증가로 인한 동작속도 감소의 보상을 위해 Repeater Driver 구조를 Core 및 Periphery Circuit에 적용하여 동작 대비 Chip 면적의 증가를 최소화 하도록 하였다.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.3
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• pp.44-54
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• 2000

In this paper, a design methodology for the frequency-adaptive negative-delay circuit which can be implemented in standard CMOS memory process is proposed. The proposed negative-delay circuit which is a basic type of the analog SMD (synchronous mirror delay) measures the time difference between the input clock period and the target negative delay by utilizing analog behavior and repeats it in the next coming cycle. A new technology that compensates the auxiliary delay related with the output clock in the measure stage differentiates the Proposed method from the conventional method that compensates it in the delay-model stage which comes before the measure stage. A wider negative-delay range especially prominent in the high frequency performance than that in the conventional method can be realized through the proposed technology. In order to implement the wide locking range, a new frequency detector and the method for optimizing the bias condition of the analog circuit are suggested. An application example to the clocking circuits of a DDR SDRAM is simulated and demonstrated in a 0.6 ${\mu}{\textrm}{m}$ n-well double-poly double-metal CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.31-39
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• 2004

This paper illustrates the noise characteristics under chip's core operations according to types of packages and modules for DDR DRAM For analyzing this, the impedance profiles and power noises are analyzed with DRAM chips having commercial TSOP package and commercial FBGA package on TSOP-based DIMM and FBGA-based DIMH In controversy with common concepts, we find that the noise-isolation characteristics of FBGA package are more weak and sensitive on transferred noises than those of the TSOP package. In addition, the simulated results show that the decoupling capacitor locations of modules are more important to control the self and transfer noise characteristics than the lead inductance of the packages. Therefore, satisfying the target spec of the noise suppression and isolation can be achieved through the design of power distribution systems only with considering not only the package types but also the whole module system.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2013.11a
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• pp.161-164
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• 2013

본 논문에서는 다양한 멀티미디어 코덱을 고속으로 처리하기 위하여 전용하드웨어가 아닌 병렬 어레이 프로세서 기반의 U-Chip(Universal-Chip) 구조를 제안하고 TSMC 80nm 공정을 사용하여 11,865,090개의 게이트 수를 가지는 칩으로 개발하였다. U-Chip은 역양자화(IQ), 역변환(IT), 움직임 보상(MC) 연산을 위한 $4{\times}16$ 개의 프로세싱 유닛으로 구성된 병렬 어레이 프로세서와 문맥적응적 가변길이디코딩(CAVLC)을 위한 비트스트림 프로세서와 인트라 예측(IP), 디블록킹필터(DF) 연산을 위한 순차 프로세서와 DMAC의 데이터 전송 및 각 프로세서를 제어하여 병렬 파이프라인 스케쥴링을 처리하는 시퀀서 프로세서 등으로 구성된다. 1개의 프로세싱 유닛에 1개의 매크로블록 데이터를 맵핑하여 총 64개의 매크로블록을 병렬처리 하였다. 64개 매크로블록의 대용량 데이터 전송 시간과 각 프로세서들의 연산을 동시에 병렬 파이프라인 함으로서 전체 연산 성능을 높일 수 있는 이점이 있다. 병렬 파이프라인 구조의 H.264 디코더 프로그램을 개발하였고 제작된 U-Chip을 통해 $720{\times}480$ 크기의 베이스라인 프로파일 영상에 대하여 코어 192MHz 동작, DDR 메모리 96MHz 동작에서 30fps의 처리율을 가짐을 확인하였다.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.251-258
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• 2012

Recently, NAND Flash memory structure is evolving from SDR (Single Data Rate) to high speed DDR(Double Data Rate) to fulfill the high performance requirement of SSD and SSS. Accordingly, the proper ways of transferring data that latches valid data stably and minimizing data skew between pins by using PHY(Physical layer) circuit techniques have became new issues. Also, rapid growth of speed in NAND flash increases the operating frequency and power consumption of NAND flash controller. Internal voltage variation margin of NAND flash controller will be narrowed through the smaller geometry and lower internal operating voltage below 1.5V. Therefore, the increase of power budge deviation limits the normal operation range of internal circuit. Affection of OCV(On Chip Variation) deteriorates the voltage variation problem and thus causes internal logic errors. In this case, it is too hard to debug, because it is not functional faults. In this paper, we propose new architecture that maintains the valid timing window in cost effective way under sudden power fluctuation cases. Simulation results show that the proposed technique minimizes the data skew by 379% with reduced area by 20% compared to using PHY circuits.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.6
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• pp.1107-1114
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• 2004

System Packet Interface Level 4 Phase 2(SPI-4.2) is an interface for packet and cell transfer between a physical layer(PHY) device and a link layer device, for aggregate bandwidths of OC-192 ATM and Packet Over Sonet/SDH(POS), as well as 10Gbps Ethernet applications. SPI-4.2 core consists of Tx and Rx modules and supports full duplex communication. Tx module of SPI-4.2 core writes 64-bit data word and 14-bit header information from the user interface into asynchronous FIFO and transmits DDR(Double Data Rate) data over PL4 interface. Rx module of SPI-4.2 core operates in vice versa. Tx and Rx modules of SPI-4.2 core are designed to support maximum 256-channel and control the bandwidth allocation by configuring the calendar memory. Automatic DIP4 and DIP-2 parity generation and checking are implemented within the designed core. The designed core uses Xilinx ISE 5.li tool and is described in VHDL Language and is simulated by Model_SIM 5.6a. The designed core operates at 720Mbps data rate per line, which provides an aggregate bandwidth of 11.52Gbps. SPI-4.2 interface core is suited for line cards in gigabit/terabit routers, and optical cross-connect switches, and SONET/SDH-based transmission systems.