• 한국전자파학회논문지
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• 제26권5호
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• pp.521-524
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• 2015

본 논문에서는 재구성이 가능한 다중포트 전력증폭기를 이용해 선택적으로 무선 전력 전송을 할 수 있는 구조를 제안한다. 제안된 무선 전력 전송 구조는 FPGA에 의해 제어되는 입력 위상 가변부, 두 개의 Class-E급 전력증폭기, 4-포트 직교전력 결합기, 두 개의 부하 코일로 구성된다. FPGA에 의해 제어되는 입력 위상부에 의해 두 코일에 전력이 선택적으로 1:1, 2:0, 0:2의 비율로 분배된다. 제작한 시스템은 측정 결과, 125 kHz에서 1 W DC 전력을 전달하였다. 각 개별 전력증폭기는 79 % 효율을 가졌으며, 정류변환을 포함한 최종 DC-DC 변환효율은 40 % 이상을 보였다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.2-6
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• 2000

We have developed an extremely sensitive radio frequency amplifier based on the dc superconducting quantum interference device (dc SQUID). Unlike a conventional semiconductor amplifier, a SQUID can be cooled to ultra-low temperatures (100 mK or less) and thus potentially achieve a much lower noise temperature. In a conventional SQUID amplifier, where the integrated input coil is operated as a lumped element, parasitic capacitance between the coil and the SQUID washer limits the frequency up to which a substantial gain can be achieved to a few hundred MHz. This problem can be circumvented by operating the input coil of the SQUID as a microstrip resonator: instead of connecting the input signal open. Such amplifiers have gains of 15 dB or more at frequencies up to 3 GHz. If required, the resonant frequency of the microstrip can be tuned by means of a varactor diode connected across the otherwise open end of the resonator. The noise temperature of microstrip SQUID amplifiers was measured to be between $0.5\;K\;{\pm}\;0.3\;K$ at a frequency of 80 MHz and $1.5\;K\;{\pm}\;1.2\;K$ at 1.7 GHz, when the SQUID was cooled to 4.2 K. An even lower noise temperature can be achieved by cooling the SQUID to about 0.4 K. In this case, a noise temperature of $100\;mK\;{\pm}\;20\;mK$ was achieved at 90 MHz, and of about $120\;{\pm}\;100\;mK$ at 440 MHz.

• Progress in Superconductivity
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• 제2권1호
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• pp.1-5
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• 2000

We have developed an extremely sensitive radio frequency amplifier based on the dc superconducting quantum interference device (dc SQUID). Unlike a conventional semiconductor amplifier, a SQUID can be cooled to ultra-low temperatures (100 mK or less) and thus potentially achieve a much lower noise temperature. In a conventional SQUID amplifier, where the integrated input coil is operated as a lumped element, parasitic capacitance between the coil and the SQUID washer limits the frequency up to which a substantial gain can be achieved to a few hundred MHz. This problem can be circumvented. by operating the input coil of the SQUID as a microstrip resonator: instead of connecting the input signal between the two ends of the coil, it is connected between the SQUID washer and one end of the coil; the other end is left open. Such amplifiers have gains of 15 dB or more at frequencies up to 3 GHz. If required, the resonant frequency of the microstrip can be tuned by means of a varactor diode connected across the otherwise open end of the resonator. The noise temperature of microstrip SQUID amplifiers was measured to be between 0.5 K $\pm$ 0.3 K at a frequency of 80 MHz and 1.5 K $\pm$: 1.2 K at 1.7 GHz, when the SQUID was cooled to 4.2 K. An even lower noise temperature can be achieved by cooling the SQUID to about 0.4 K. In this case, a noise temperature of 100 mK $\pm$ 20 mK was achieved at 90 MHz, and of about 120 $\pm$ 100 mK at 440 MHz.

• 전기학회논문지
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• 제57권10호
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• pp.1888-1892
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• 2008

In this paper, a new parallel CMOS self-bias differential amplifier is designed to use in high-speed analog signal processing circuits. The designed parallel CMOS self-bias differential amplifier is developed by using internal biasing circuits and the complement gain stages which are parallel connected. And also, the parallel architecture of the designed parallel CMOS self-bias differential amplifier can improve the gain and gain-bandwidth product of the typical CMOS self-bias differential amplifier. With 1.8V $0.8{\mu}m$ CMOS process parameter, the results of HSPICE show that the designed parallel CMOS self-bias differential amplifier has a dc gain and a gain-bandwidth product of 64 dB and 49 MHz respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.180-182
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• 1994

In an electron storage ring of Pohang Light Source (PLS), electrons lose their energy in every turn by the synchronous radiation. A high power RF amplifier is employed to compensate the electron energy that is lost by the synchronous radiation. The specification of RF amplifier is an continuous output power of 60 kW at 500.082 MHz operating frequency. The power is supplied to RF cavities in the storage ring tunnel. Total number of amplifier system currently required is three. Tile total number will be increased upto five as the operating condition of storage ring is upgraded. The RF amplifier is mainly consisted of a high voltage DC power supply, an intermediate RF power amplifier (IPA), and a klystron tube. In this article, the design of RF amplifier system and characteristics of the klystron tube will be discussed.

• Journal of electromagnetic engineering and science
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• 제2권1호
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• pp.5-10
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• 2002

We have analized the inverse class-F and class-F amplifiers using their waveforms. From the analytic equations derived from the analysis, we have calculated tole efficiencies, output powers, DC power dissipations, and optimum fundamental load impedances of the inverse class-F and class-F amplifiers. We also have compared them for various operation conditions, which include the same peak current, saute DC power dissipation, same fundamental RF output power, and same fundamental load impedance with different Ron(on-resistance). These analyses have clearly shown the performance limitations, advantages, and guide to the optimized design of the inverse class-F amplifiers.

• Journal of electromagnetic engineering and science
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• 제15권4호
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• pp.232-238
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• 2015

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

• 한국항해항만학회지
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• 제27권2호
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• pp.217-221
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• 2003

본 논문에서는 새로운 형태의 CSP (chip site package)를 이용하여 정합소자 린 바이어스소자를 MMIC상에 완전집적한 Ku/K밴드 광대역 증폭기 MMIC에 관하여 보고한다. 새로운 형태의 CSP에 대해서는 이방성 도전필름인 ACF (anisotropic conductive film)을 이용하였으며, 그 결과 MMIC 패키지 프로세스가 간략화 되었고, CSP MMIC의 저 가격화가 실현되었다. MMIC상에 집적하기 위한 DC 바이어스 용량소자로서는 고유전율의 STO (SrTiO3) 필름 커패시터가 이용되었다. 제작된 CSP MMIC는 광대역 RF동작특성 (12-24 GHz에서 12.5$\pm$1.5 dB의 이득치, -6 dB이하의 반사계수, 18.5$\pm$1.5 dBm의 PldB) 을 보였다. 본 논문은 K 또는 Ku 밴드의 주파수대역에 있어서의 완전집적화 CSP MMIC에 관한 최초의 보고이다.

• 한국항해항만학회지
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• 제26권2호
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• pp.215-220
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• 2002

본 논문에서는 DTV 중계기용 Temperature Independent Biasing을 이용한 100 watt급 단위 전력증폭기를 설계한 후, 제작하였다. $20^{\circ}C$에서 $100^{\circ}C$까지의 온도변화에 대하여 단위 전력증폭기의 DC 동작점은 능동 바이어스에 의해서 고정되며, 증폭기의 소모전류의 변화량이 0.6A 이하의 우수한 특성을 얻었다. 제작된 단위 전력증폭기는 12dB 이상의 이득, $\pm$0.5dB 이하의 이득 평탄도, DTV 중계 주파수범위(470-806 MHz)에 걸쳐 15dB 이하의 입.출력 반사손실을 나타내었다. 100 Watt 단위 전력증폭기는 출력 전력이 100 watt일 때 2MHz의 오프셋에서 32dBc 이상의 상호 변조 왜곡(IMD)을 나타내었다.

• 한국항행학회논문지
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• 제23권2호
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• pp.166-171
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• 2019

본 논문은 6.78 MHz무선전력전송 송신기의 전송 효율을 높이고 송수신 코일 간격 변화에도 안정적 특성을 확보하기 위해 전류 모드 클래스 D 전력증폭기를 설계한다. 선형증폭기의 이론적인 효율을 제한하는 트랜지스터의 기생 커패시터 성분에 의한 손실을 적게 만들어 전력증폭기의 효율을 향상시킨다. 회로 설계 시뮬레이터를 이용하여 고효율 증폭기를 설계하고 부하 임피던스 변화에 따른 전력 출력, 효율 특성을 시뮬레이션하여 검증하였다. 시뮬레이션에서 DC 바이어스 30 V일 때 42.1 dBm의 출력과 95%의 효율을 갖도록 설계하였다. 전력증폭기를 제작하여 42.1 dBm (16 W)의 출력에서 91%의 효율을 보였다. 드론 무선전력전송에 적용될 송수신 코일을 제작하였으며, 송수신 코일 간격에 따른 부하변화에 따라 전력부가효율이 최대 88% 이고 출력전력 $42.1dBm{\pm}1.7dB$의 특성을 나타내었다.