• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1135-1140
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• 2012

An electrochromatographic microchip with carboxyl-group-derivatized mono-disperse silica packing was prepared from the corresponding colloidal silica solution by utilizing capillary action and self-assembly behavior. The silica beads in water were primed by the capillary action toward the ends of cross-patterned microchannel on a cyclic olefinic copolymer (COC) substrate. Slow evaporation of water at the front of packing promoted the self-assembled packing of the beads. After thermally binding a cover plate on the chip substrate, reservoirs for sample solutions were fabricated at the ends of the microchannel. The packing at the entrances of the microchannel was silver coated to fix utilizing an electroless silver-plating technique to prevent the erosion of the packed structure caused by the sudden switching of a high voltage DC power source. The electrochromatographic behavior of the microchip was explored and compared to that of the microchip with bare silica packing in basic borate buffer. Electrophoretic migration of Rhodamine B was dominant in the microchip with the carboxyl-derivatized silica packing that resulted in a migration approximated twice as fast, while the reversible adsorption was dominant in the bare silica-packed microchip. Not only the faster migration rates of the negatively charged FITC-derivatives of amino acids but also the different migration due to the charge interaction at the packing surface were observed. The electrochromatographic characteristics were studied in detail and compared with those of the bare silica packed microchip in terms of the packing material, the separation potential, pH of the running buffer, and also the separation channel length.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.181-185
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• 2006

A novel 60GHz optical carrier generator with a polarization domain-inverted structure is suggested and is demonstrated. The two arms of the Mach-Zehnder optical waveguide are periodically poled for quasi-phase velocity matching between the optical wave at 1550nm and the RF wave at 30 GHz. The center frequency of band-pass modulation and the 3 dB bandwidth of the fabricated modulator were measured to be 30.3 GHz and 5.1 GHz, respectively. Sub-carriers with the frequency difference of 60GHz waeregenerated under appropriate DC biac voltage application while the carrier was suppressed to lead to the power ratio between the modulated sub-carrier and the suppressed fundamental carrier of 28 dB, which proves that double sideband- suppressed carrier(DSB-SC) operation can be realized by the suggested single device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.4
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• pp.411-419
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• 2005

In this paper, a sliding mode observer for solar array current estimation in the photovoltaic power generation system is presented. The solar array current estimation Information is obtained from the sliding mode observer and fed into the maximum power point tracker to update the reference voltage. The parameter values such as inverter dc link capacitances cm be changed up to 50$\%$ from their nominal values and the linear observer can't estimate the correct state values under the parameter variations and noisy environments. The configuration of sliding mode observer is simple, but it shows the robust tracking performance against parameter variations and modeling uncertainties. In this paper, the method for constructing the sliding mode observer using equivalent control input is presented and the convergence of the proposed observer is verified by the Lyapunov method. The mathematical modeling and the experimental results verify the validity of the proposed method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.378-384
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• 2003

Etching species in CF$_4$/Ar plasma and the behavior of etching rate of Bi$_4$-$_{x}$L$_{x}$rTi$_3$O$_2$ (BLT) films were investigated in inductively coupled plasma (ICP) reactor in terms of etch parameters. The etching rate as functions of CF$_4$ contents showed the maximum 803 $\AA$/min at 20% CF$_4$ addition in CF$_4$/Ar plasma. The increase of RF power and DC bias voltage caused to an increase of etch rate. The variation of relative volume densities for F and he atoms were measured with the optical emission spectroscopy (OES). The chemical states of BLT were investigated with using X-ray photoelectron spectroscopy (XPS). XPS narrow scan analysis shows that La-fluorides remained on the etched surface. The presence of maximum etch rate at CF$_4$(20%)/Ar(80%) may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The roles of he ion bombardment include destruction of metal (Bi, La, Ti)-O bonds as well as assistant for chemical reaction of metals with fluorine atoms.oms.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.135-139
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• 2015

$Cu_2SnS_3$ (CTS) based thin film solar cells (TFSCs) are of great interest because of its earth abundant, low-toxic and eco-friendly material with high optical absorption coefficient of $10^4cm^{-1}$. In this study, the DC sputtered precursor thin films have been sulfurized using rapid thermal annealing (RTA) system in the graphite box under Ar gas atmosphere for 10 minute. The systematic variation of sulfur powder during annealing process has been carried out and their effects on the structural, morphological and optical properties of CTS thin films have been investigated. The preliminary power conversion efficiency of 1.47% with a short circuit current density of $33.9mA/cm^2$, an open circuit voltage of 159.7 mV, and a fill factor of 27% were obtained for CTS thin film annealed with 0.05g of S powder, although the processing parameter s have not yet been optimized.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.258-264
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• 1997

$YBa_{2}Cu_{3}O_{7}$ single layer dc SQUID magnetometers, prepared on $1\;cm^{2}\;SrTiO_{3}$ substrates, have been fabricated and characterized. Based on the analytical description, a SQUID magnetometer design having a 8.5 mm pickup coil with 2.6 mm linewidth, and a SQUID inductance Ls = 50 pH with $3\;{\mu}m$ Josephson junctions is presented. The devices showed a maximum modulation voltage depth of $65\;{\mu}V$ and a magnetic field noise of 0.6 pT /$\sqrt{Hz}$ at 1 Hz. Clear traces of human magnetocardiogram could be obtained with the SQUID magnetometer operating at 77 K.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.3
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• pp.74-83
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• 2002

The maximun short circuit current of modern power system is becoming so large that circuit breaker is not expected to be able to shut down the current in the future In order cut over-currents, a system composed of a superconducting fault current limiter(SFCL) and traditional breaker seems to provide a promising solution for furture power operation. In present paper, three line-to-ground fault is assumed to happen at the center of 345kV transmission lines in a large capacity electric power system. The superconducting fault current limiter was represented using a commutation type, which consists of a non-inductive superconducting coil and current limiting element (resistor or reactor). from the viewpoint of current limiting performance, the prevention of the voltage drop at the load bus and comparision characteristics for two type SFCL. Desired design specification and operation parameters of SECL were also given qualitatively by the performance.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.