• Journal of Surface Science and Engineering
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• v.37 no.3
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• pp.152-157
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• 2004

Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.

• Journal of Surface Science and Engineering
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• v.41 no.1
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• pp.6-11
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• 2008

An Indium Zinc Oxide(IZO) transparent conductive layer was deposited on a large size glass substrate by using magnetron dc sputtering method with varying a deposition temperature. As the deposition temperature decreased to a room temperature, the sheet resistance of IZO film increased. But this deposition temperature range is included in an applicable to a device. From a standpoint of the sheet resistance, the differences of the sheet resistance were not great and the uniformity of the layer was uniformed around 10%. Crystallization particles were shown on the surface of the layer as deposition temperature increased, but these particles were not shown on the surface of the layer as deposition temperature decreased to the room temperature. It didn't make a scrap of difference in a transmittance of varying deposition temperature. Therefore, it is concluded that IZO thin film manufactured by the room temperature deposition condition can be used as a large size transparent conductive layer of a liquid crystal display device.

• Journal of Ocean Engineering and Technology
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• v.21 no.1 s.74
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• pp.59-63
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• 2007

The thin film of indium tin oxide (ITO) was prepared using the inclination opposite target type DC magnetron sputtering equipment onto the glass substrate at room temperature, using oxidized ITO with In2O3 and SnO2in a weight ratio of 9:1. The elastic modulus and hardness of the ITO thin films, prepared at different deposition conditions, were determined through anano-indentation experiment. The work pressure was varied from $2.6{\times}10-1\;to\;8.3{\times}10-1Pa$. The results show that the variation of work pressure during film deposition could vary significantly, according to the elastic modulus and hardness of the ITO thin films. It also can be seen that a minimum value exists in the film resistivity for the ITO thin films, prepared according to the variation of work pressure. However, the ITO film produced at room temperature had a microstructure in which a X ray diffraction peak is not clear, regardless of the work pressure.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.532-536
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• 2006

The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{\circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{\times}10^{-2}{\Omega}{\cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{\circ}C$ are enhanced up to $5{\times}10^{-4}{\Omega}{\cdot}cm$ and 85%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.744-751
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• 2003

Co-Pd alloy thin films prepared by a DC-sputter that have self-organized nano structure(SONS), are promising for high-density information storage media in information era. We prepared the samples by varying Pd contents of 0~8.1 wt% at the substrate temperatures of room temperature (RT) and 200 $^{\circ}C$, respectively Microstructure and Pd contents of the Co$_{1-x}$ Pd$_{x}$ films are probed by a scanning electron microscope (SEM), a transmission electron microscope (TEM) and an energy dispersive spectrometer (EDS). We also investigated the saturation magnetization (Ms), remanence and coercivity of the Co$_{1-x}$ Pd$_{x}$ films. Surface roughness are measured by an atomic force microscope (AFM). We revealed that self-organized nano size Co-enriched phase and Pd-enriched phase existed with Pd contents at the substrate temperatures of RT and 20$0^{\circ}C$ through microstructure characterization. SONS helped to keep the saturation magnetization and enhance the perpendicular anisotropy with Pd contents. Out result implies that we may tune the perpendicular magnetic properties with keeping the saturation magnetization by varying substrate temperatures and Pd contents for high density magnetic recording.rding.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1044-1048
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• 2007

With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.256-262
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• 1999

Sputter deposited CoCr(Mo)/Si film were studied with emphasis on the correlation between magnetic properties and crystallographic orientation. The perpendicular coercivities of CoCr films decreased with Si underlayer thickness, whereas those of CoCrMo films increased with Si underlayer thickness. It has been explained that additions of the larger atomic radius Mo atoms in CoCr films impedes crystal growth resulting in a decrease in grain size, thus this small grain size may induce high perpendicular coercivity. The c-axis alignment of CoCrMo film was improved due to addition of 2at.%Mo. It means CoCrMo layer grow self-epitaxial directly from orientation and structure of Si underlayer when the main layer grow on underlayer.

• Journal of Magnetics
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• v.2 no.3
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1989-1992
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• 2012

We present a low temperature (${\approx}70^{\circ}C$) method to prepare anatase, vertically aligned feather-like $TiO_2$ (VAFT) nanowire arrays $via$ reactive pulsed DC magnetron sputtering. The synthesis method is general, offering a promising strategy for preparing crystalline nanowire metal oxide films for applications including gas sensing, photocatalysis, and 3rd generation photovoltaics. As an example application, anatase nanowire films are grown on fluorine doped tin oxide coated glass substrates and used as the photoanode in dye sensitized solar cells (DSSCs). AM1.5G power conversion efficiencies for the solar cells made of 1 ${\mu}m$ thick VAFT have reached 0.42%, which compares favorably to solar cells made of the same thickness P25 $TiO_2$ (0.35%).

• Journal of Magnetics
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• v.4 no.4
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• pp.119-122
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• 1999

Magnetic properties and crystal structures of (Fe1-XCoX) Pt (X = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0) ternary thin films were investigated. The order-disorder phase transformation of FePt thin films during annealing was also studied by x-ray diffraction and M ssbauer spectroscopy. The magnetic thin films were deposited on glass substrates using a dc sputtering method and were subsequently annealed at 400~$700^{\circ}C$ in a high vacuum. The as-deposited films exhibited a high degree of the <111> preferred orientation and the preferred orientation was not destroyed even after the subsequent post annealing. The coercivity of the ($Fe_xCo_{1-x}$) Pt thin films annealed at $700^{\circ}C$ showed a minimum value at the equiatomic composition of the Fe and Co atoms. The ordered structure of the FePt alloy was thought to have formed from the disordered structure by an inhomogeneous process, which was confirmed by the asymmetric peak shapes and M ssbauer spectra.