• Journal of the Korean institute of surface engineering
• /
• v.35 no.3
• /
• pp.133-140
• /
• 2002

The Ti-Si-N coating layers were synthesized on SKD 11 steel substrate by a DC reactive magnetron co-sputtering technique with separate Ti and Si targets. The high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses for the coating layers revealed that microstructure of Ti-Si-N layer was nanocomposite, consisting of nano-sized TiN crystallites surrounded by amorphous $Si_3$$N_4$ phase. The highest hardness value of about 39 GPa was obtained at the Si content of ~11at.%, where the microstructure had fine TiN crystallites (about 5nm in size) dispersed uniformly in amorphous matrix. As the Si content in Ti-Si-N films increased, the TiN crystallites became from aligned to randomly oriented microstructure, finer, and fully penetrated by amorphous phase. Free Si appeared in the layers due to the deficit of nitrogen source at higher Si content. Friction coefficient and wear rate of the Ti-Si-N coating layer significantly decreased with increase of relative humidity. The self-lubricating tribe-layers such as $SiO_2$ or (OH)$Si_2$ seemed to play an important role in the wear behavior of Ti-Si-N film against steel.

• Journal of the Korean Ceramic Society
• /
• v.41 no.9
• /
• pp.637-641
• /
• 2004

We investigated the effects of SiH$_4$ gas on the surface of Hf-silicate films during the deposition of polycrystalline (poly) Si films and the thermal stability of sputtered Hf-silicate films in poly Si/Hf-silicate structure by using High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray Photoelectron Spectroscopy (XPS). Hf-silicate films were deposited by using DC-mag-netron sputtering with Hf target and Si target and poly Si films were deposited at 600$^{\circ}C$ by using Low Pressure Chemical Vapor Deposition (LPCVD) with SiH$_4$ gas. After poly Si film deposition at 600$^{\circ}C$, Hf silicide layer was observed between poly Si and Hf-silicate films due to the reaction between active SiH$_4$ gas and Hf-silicate films. After annealing at 900$^{\circ}C$, Hf silicide, formed during the deposition of poly Si, changed to Hf-silicate and the phase separation of the silicate was not observed. In addition, the Hf-silicate films remain amorphous phase.

• Proceedings of the KIEE Conference
• /
• 2008.11a
• /
• pp.12-15
• /
• 2008

A distance relay has been widely used for transmission line protection. The distance relay detects a fault based on the calculated impedance i.e. the ratio of the voltage to the current measured from a current transformer (CT) and a coupling capacitor voltage transformer (CCVT), respectively. When a fault occurs and a CT saturates due to the magnitude of fault current, dc component, primary time constant, and the remanent flux of the iron core, the secondary current of a CT is distorted On the other hand, non-fundamental components generated during a fault can increase the error of a CCVT, particularly when a fault distance is short. The distortion of the current and voltage can cause mal-operation or the operating time delay of a distance relay. This paper describes the response of a distance relay considering the errors of a CT and a CCVT. The results indicate that the severe distortion of a CT and a CCVT have noticeable effect to a distance relay.

• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.897-899
• /
• 1992

This paper deals with the characteristics of Indium Tin Oxide(ITO) sputtered by the reactive magnetron sputtering process. ITO films have been grown at various substrate temperatures(R.T, 100$^{\circ}C$, 200$^{\circ}C$, 240$^{\circ}C$) and we used the target material of alloy of Indium and Tin. The electrical and optical properties of the ITO film have been investigated and the effect of magnetic field to the properties of ITO was studied. We have studied how much the improvement of transmission rate and sheet resistivity by heat treatment was. The sample with good electrical and optical properties can be obtained for the low substrate temperature of 200$^{\circ}C$-250$^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.535-536
• /
• 2013

본 연구에서는 DC/RF co-sputtering공법을 통해 제작한 In-Mo-O 투명 Mo doping 농도 및 열처리 온도에 따른 전기적, 광학적, 구조적 특성을 분석하고, 최적화된 In-Mo-O 투명전극을 유기태양전지(OPVs)와 유기발광다이오드(OLED)에 적용하여 그 가능성을 평가하였다. Mo doping 농도는 co-sputtering 공정 중 MoO3에 인가되는 radio-frequency (RF) power를 변화시켜 조절되었으며, 투명전극의 광학적 특성 및 전기적 특성 향상을 위해 성막 공정 후 급속 열처리 공정을 온도 별로 진행하였다. In-Mo-O 투명 전극은 Mo 도핑 농도에 영향을 받음을 확인할 수 있었고, 최적화된 Mo doping 파워에서 성막한 In-Mo-O 박막은 급속 열처리 공정 후 면저항 24.57 Ohm/square, 투과도 81.57% (400~1,200 nm wavelength)를 나타내었다. Bulk hetero-junction 기반의 고효율 유기태양전지와 유기발광다이오드 적용하기 위해 본 연구에서 제작된 IMO 투명전극의 구조적 특성, 결정성 및 표면특성은 x-ray diffraction (XRD), atomic force microscopy(AFM), field effect scanning electron microscopy (FE-SEM), High-resolution transmission electron microscopy (HRTEM) 분석을 통해 진행하였다. In-Mo-O 투명 전극상에 제작된 OLEDs와 OPV는 reference ITO 전극에 제작된 OLEDs/OPV와 비교할 때 유사하거나 향상된 특성을 나타내었으며 이는 In-Mo-O 박막이 OLED/OPV용 투명 전극으로 적용이 가능함을 말해준다.

• Journal of Korea Multimedia Society
• /
• v.20 no.6
• /
• pp.853-864
• /
• 2017

HD padding area is essential redundancy in HD broadcasting. It is possible to use this padding area for the purpose of improving DTV broadcasting services. For utilization of this area, The bit of a service data was converted to black and white $8{\times}8$ block image. Converted block images are compressed with active video and are delivered to a receiver as only DC coefficients in a video stream. video quality is not effected by the proposed method, and service data was perfectly recovered in receiver without errors by using block average and threshold. The proposed utilization of HD essential padding area can possibly overcome the limited transmission stream rate with the bandwidth of HD broadcasting. If service data in transport or video stram were transferred using this padding area, it is possible to improve video quality with expanded video stream rate. Additionally, because the proposed methods are based on well-established standards, it is also useful for world-wide HD broadcasting systems such as ATSC, DVB, and IPTV.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.17 no.3
• /
• pp.191-197
• /
• 2012

This paper proposes a new synthetic test circuit (STC) to confirm the switching operation of thyristor valve in HVDC converter. The proposed STC uses a 6-pulse thyristor converter with 2-phase chopper as a high-current source to provide turn-on current to the test valve. The operation of proposed STC was verified through theoretical analysis and computer simulations. Based on computer simulations, a hardware scaled model was built and tested to confirm the feasibility of implementing a real-size test facility. The proposed system has an advantage of simple structure and operation over the existing system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.302-305
• /
• 1995

ITO(indium tin oxide) that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. Nowaday, according to the development of flat panel display such as LCD(Liquid Crystal display, EL(electolumine- scence display), PDP(plasma display panel), ECD(electrocromic display), the higher quality in the low temperature process has been asked to reduce the production cost and to have a good uniformity on a large substrate. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. To reduce the defact in ITO, the effect on ITO by varing the magnetic field intensity and the applied voltage ares studied. the resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140$^{\circ}C$. is 1.6${\times}$10$\^$-1/$\Omega$$.$cm with 85% optical transmission in viaible ray.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.857-860
• /
• 2002

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.1
• /
• pp.27-30
• /
• 2013

Catalyst-free graphene nano-sheets without substrates have been synthesized using fullerene and a high direct current (dc) pulse in the spark plasma sintering (SPS) process. Graphene nano-sheets were synthesized directly in the gas phase of carbon atoms which are generated from fullerene at a temperature of $600^{\circ}C$. Characterization has been carried out by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD).