• 제목/요약/키워드: DC transmission

검색결과 477건 처리시간 0.025초

회전식 점도계를 이용한 ERF의 겉보기 점도 특성 (Apparent Viscosity Properties of Electro-Rheological Fluid by Using Rotational Viscometer)

  • 장성철;이진우;김태형;박종근
    • 한국해양공학회:학술대회논문집
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    • 한국해양공학회 2001년도 춘계학술대회 논문집
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    • pp.196-201
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    • 2001
  • Electro-Rheological(ER) fluids change their apparent viscosity according to the electric field strength. Therefore, there are many practical applications using the ER fluids. ER effect on the dispersive system of polarizable fine powder/dielectric oil has been investigated. The electrical and rheological properties of starch based ER fluid were reported. Yield stress of the fluids were measured on the couette cell type rheometer as a function of electric fields, particle concetrations, and temperatures. The electric field is applied by high voltage DC power supply, The outer cup is connected to positive electrode(+) and the bob becomes ground(-). And the temperatures the viscosity(or shear stress) versus shear rates were measured. In this experiment shear rates were increased from 0 to 200s$^{-1}$ in 2 minutes. This thesis presents Bingham properties of ER fluids subjected to temperature variations. The temperature dependence of the viscosity was determined for ER fluids consisting of 35 weight % starch particles in automatic transmission oil.

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III-V 광소자 제작을 위한 ITO/n+lnP 옴 접촉 특성연구 (Formation of ITO Ohmic Contact to ITO/n+lnP for III-V Optoelectronic Devices)

  • 황용한;한교용
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.449-454
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    • 2002
  • The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

Modeling, Simulation and Fault Diagnosis of IPFC using PEMFC for High Power Applications

  • Darly, S.S.;Vanaja Ranjan, P.;Justus Rabi, B.
    • Journal of Electrical Engineering and Technology
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    • 제8권4호
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    • pp.760-765
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    • 2013
  • An Interline Power Flow Controller (IPFC) is a converter based controller which compensates and balance the power flow among multi-lines within the same corridor of the multi-line subsystem. The Interline Power Flow Controller consists of a voltage source converter based Flexible AC Transmission System (FACTS) controller for series compensation. The reactive voltage injected by individual Voltage Source Converter (VSC) can be controlled to regulate active power flow in the respective line in which one VSC regulates the DC voltage, the other one controls the reactive power flows in the lines by injecting series active voltage. In this paper, a circuit model for IPFC is developed and simulation of interline power flow controller is done using the proposed circuit model. Simulation is done using MATLAB Simulink and PSPICE. The results obtained by MATLAB are compared with the results obtained by PSPICE and compared with theoretical values.

Improvement of LCC-HVDC Input-Output Characteristics using a VSC-MMC Structure

  • Kim, Soo-Yeon;Park, Seong-Mi;Park, Sung-Jun;Kim, Chun-Sung
    • 한국산업융합학회 논문집
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    • 제24권4_1호
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    • pp.377-385
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    • 2021
  • High voltage direct current(HVDC) systems has been an alternative method of a power transmission to replace high voltage alternate current(HVAC), which is a traditional AC transmission method. Due to technical limitations, Line commutate converter HVDC(LCC-HVDC) was mainly used. However, result from many structural problems of LCC-HVDC, the voltage source converter HVDC(VSC-HVDC) are studied and applied recently. In this paper, after analyzing the reactive power and output voltage ripple, which are the main problems of LCC-HVDC, the characteristics of each HVDC are summarized. Based on this result, a new LCC-HVDC structure is proposed by combining LCC-HVDC with the MMC structure, which is a representative VSC-HVDC topology. The proposed structure generates lower reactive power than the conventional method, and greatly reduces the 12th harmonic, a major component of output voltage ripple. In addition, it can be easily applied to the already installed LCC-HVDC. When the proposed method is applied, the control of the reactive power compensator becomes unnecessary, and there is an advantage that the cut-off frequency of the output DC filter can be designed smaller. The validity of the proposed LCC-HVDC is verified through simulation and experiments.

Microstructural evolution of tantalum nitride thin films synthesized by inductively coupled plasma sputtering

  • Sung-Il Baik;Young-Woon Kim
    • Applied Microscopy
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    • 제50권
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    • pp.7.1-7.10
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    • 2020
  • Tantalum nitride (TaNx) thin films were grown utilizing an inductively coupled plasma (ICP) assisted direct current (DC) sputtering, and 20-100% improved microhardness values were obtained. The detailed microstructural changes of the TaNx films were characterized utilizing transmission electron microscopy (TEM), as a function of nitrogen gas fraction and ICP power. As nitrogen gas fraction increases from 0.05 to 0.15, the TaNx phase evolves from body-centered-cubic (b.c.c.) TaN0.1, to face-centered-cubic (f.c.c.) δ-TaN, to hexagonal-close-packing (h.c.p.) ε-TaN phase. By increasing ICP power from 100 W to 400 W, the f.c.c. δ- TaN phase becomes the main phase in all nitrogen fractions investigated. The higher ICP power enhances the mobility of Ta and N ions, which stabilizes the δ-TaN phase like a high-temperature regime and removes the micro-voids between the columnar grains in the TaNx film. The dense δ-TaN structure with reduced columnar grains and micro-voids increases the strength of the TaNx film.

Analysis and Reduction of Crosstalk on Coupled Microstrip tines by Using FDTD Method

  • Pichaya Supanakoon;Monchai Chamchoy;Panarat Rawiwan;Prakit Tangtisanon;Sathaporn Promwong;Teerasilpa Dumwipata;Takada, Jun-ichi
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -1
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    • pp.523-526
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    • 2002
  • The crosstalk among coupled microstrip lines is the major limiting factors of signal qualities in the high-speed digital and communication equipment. In this paper, a three-dimensional finite difference time domain (FDTD) method is applied to analyze the crosstalk between the coupled microstrip lines. The proposed structures of the coupled microstrip lines are investigated to reduce the coupling in a simple way by modifying their ground plane with an optimum gap. The examples of these structures with the different sizes of the gaps on their ground plane are studied. These structures are considered as the four-port network to evaluate transmission efficiency, near- and far-end crosstalk. Gaussian pulse is excited to evaluate the frequency characteristics from dc to 30 ㎓. The transmission efficiency, near- and far-end crosstalk of each structure of the coupled microstrip lines are demonstrated. The numerical results of this study show that the majority of crosstalk is the far-end crosstalk. The usage of the optimum gap on the ground plane can reduce the far-end crosstalk of the coupled microstrip lines while the transmission efficiency is nearly equal.

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Multiplier 설정을 통한 무선 전력 전송 용 CMOS 정류 회로 (CMOS Rectifier for Wireless Power Transmission Using Multiplier Configuration)

  • 정남휘;배윤재;조춘식
    • 전자공학회논문지
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    • 제50권12호
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    • pp.56-62
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    • 2013
  • 우리는 MOSFET Layout 단계에서 Multiplier 구성을 통한 Common centroid layout 방식을 사용한 무선 전력 전송 용 CMOS 정류회로를 제안한다. 제안하는 정류회로는 기존의 다이오드를 사용하지 않은 Cross-coupled MOSFET 정류회로로 13.56 MHz에서 동작한다. 전력 소모를 최소화하고, 높은 주파수까지 동작하기 위하여 Full bridge 정류회로에서 효율을 높이기 위한 비교기를 제거하였다. Layout 단계에서 Multiplier 구성을 통한 Common centroid layout 방식은 Chip-layout 상에서 MOSFER의 Finger에 의해 길어진 연결 선로에 존재하는 기생 직렬 저항과 병렬 Capacitor에 의해 발생하는 시간 지연을 줄이기 위해 고안되어, 천이 시간을 줄여 Cross-coupled 구조의 On-상태에서 Off-상태, 혹은 그 반대의 상태 변화를 빠르게 한다. 이는 빠른 상태 변화 시간으로 인해 전력 변환 효율을 증가시킨다. 본 정류회로는 $0.11{\mu}m$ CMOS 공정으로 제작되었으며, 전력 변환 효율은 최대 86.4%로 측정되었으며, 600 MHz 이상까지 높은 전력 변환 효율을 가지며, 이는 현재 발표된 것 중, Cross-coupled 구성을 기반으로 한 정류회로 중 가장 높은 성능을 가진다.

DGS를 이용한 가변 임피던스 선로 특성에 관한 연구 (A Study on the Characteristic of Variable Impedance Line using DGS)

  • 김영주;정명섭;박준석;조홍구
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권1호
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    • pp.35-40
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    • 2005
  • In this paper, we designed and fabricated the variable impedance line by using the DGS(Defected Ground Structure) which is useful in mounting the external lumped elements. Also we used a varactor diode as Control device stuff at the proposed variable impedance line. We are able to change the impedance of transmission line as varied the capacitance of varactor diode by adjusting DC bias. The impedance variation of the proposed DGS line is about maximum 70 Ω. We will study about the application of DAM(Direct antenna modulation) in the future work.

A study of the interference measurement analysis between 3.4125GHz band broadcasting system and UWB wireless communication system

  • 송홍종
    • 정보통신설비학회논문지
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    • 제11권1호
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    • pp.10-15
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    • 2012
  • Ultra wideband (UWB) technologies have been developed to exploit a new spectrum resource in substances and to realize ultra-high-speed communication, high precision geo-location, and other applications. The energy of UWB signal is extremely spread from near DC (Direct Current) to a few GHz. This means that the interference between conventional narrowband systems and UWB systems is inevitable. However, the interference effects had not previously been studied from UWB wireless systems to conventional wireless systems sharing the frequency bands such as broadcasting system. This paper experimentally evaluates the interference from two kinds of UWB sources, namely an orthogonal frequency division multiplex UWB source and an impulse radio UWB source, to a broadcasting transmission system. The S/N ratio degradation of broadcasting system is presented. From these experimental results, we show that in all practical cases UWB system can be coexisted 35m distance in-band broadcasting network.

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High Speed InP HBT Driver Ie For Laser Modulation

  • Sung Jung Hoon;Burm Jin Wook
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.883-884
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    • 2004
  • High-speed IC for time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP heterojunction-bipolar-transistor (HBT) technology. The driver IC was developed for driving external modulators, featuring differential outputs and the operation speed up to 10 Gbps with an output voltage swing of 1.3 Vpp at each output which was the limit of the measurement. Because -3 dB frequency was 20GHz, this circuit will be operated up to 20Gbps. 1.3Vpp differential output was achieved by switching 50 mA into a 50 $\Omega$ load. The power dissipation of the driver IC was 1W using a single supply voltage of -3.5Y. Input md output return loss of the IC were better than 10 dB and 15 dB, respectively, from DC to 20GHz. The chip size of fabricated IC was $1.7{\Box}1.2 mm^{2}$.

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