• Journal of Magnetics
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• v.14 no.2
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• pp.62-65
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• 2009

The multiferroic $BiFeO_3$ has been investigated extensively in both thin film and ceramic form. However, the synthesis of a perfect sample with high resistivity is a prerequisite for examining its properties. This paper reports the synthesis of multiferroic $BiFeO_3$ along with its structural, electrical and magnetic properties in ceramic form. Polycrystalline ceramic samples of $BiFeO_3$ were synthesized by solid-state reaction using high purity oxides and carbonates. The formation of a single-phase compound was confirmed by x-ray diffraction and its lattice parameters were determined using a standard computer program. The microstructural studies and density measurement confirmed that the prepared samples were sufficiently dense for an examination of its electrical and magnetic properties. The dc electrical conductivity studies show that the sample was resistive with an activation energy of ${\sim}0.81\;eV$. The magnetization measurement showed a linear ($M{\sim}H$) curve indicating antiferromagnetic characteristics.

• Journal of Ocean Engineering and Technology
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• v.21 no.1 s.74
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• pp.59-63
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• 2007

The thin film of indium tin oxide (ITO) was prepared using the inclination opposite target type DC magnetron sputtering equipment onto the glass substrate at room temperature, using oxidized ITO with In2O3 and SnO2in a weight ratio of 9:1. The elastic modulus and hardness of the ITO thin films, prepared at different deposition conditions, were determined through anano-indentation experiment. The work pressure was varied from $2.6{\times}10-1\;to\;8.3{\times}10-1Pa$. The results show that the variation of work pressure during film deposition could vary significantly, according to the elastic modulus and hardness of the ITO thin films. It also can be seen that a minimum value exists in the film resistivity for the ITO thin films, prepared according to the variation of work pressure. However, the ITO film produced at room temperature had a microstructure in which a X ray diffraction peak is not clear, regardless of the work pressure.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.532-536
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• 2006

The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{\circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{\times}10^{-2}{\Omega}{\cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{\circ}C$ are enhanced up to $5{\times}10^{-4}{\Omega}{\cdot}cm$ and 85%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1044-1048
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• 2007

With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

• Journal of Magnetics
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• v.2 no.3
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2701-2706
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• 2009

The polymer blends containing polypyrrole (PPy) and the sulphonic acids such as β-naphthalene sulfonic acid (NSA), camphor sulfonic acid (CSA), and dodecylbenzenesulfonic acid (DBSA) were synthesized by in situ deposition technique in an aqueous media using ammonium per sulfate (APS) as an initiator. The obtained films were characterized by scanning electron microscopy (SEM), and the thermal behavior of these polymer blends was analyzed by thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). The temperature-dependent (DC) conductivity of the obtained films shows a semiconducting behavior with a negative temperature coefficient of resistivity (TCR). The conductivity data were also analyzed through Mott’s equation, which provides the variable range hopping model in three dimensions. The parameters such as density of states at the Fermi energy, hopping energy, and hopping distance were calculated for PPy, PPy-NSA, PPy-CSA, and PPy-DBSA films, and the data were compared.

• Journal of Magnetics
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• v.10 no.4
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• pp.145-148
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• 2005

Effect of vacuum annealing on the microstructures and magnetic properties of $Fe_{84}Si_6B_{10}$ films has been investigated as a function of annealing temperature. X-ray diffraction and transmission electron microscopy were employed to analyze crystallization behavior of the films. Permeability of the films was measured at various frequencies by one-turn coil method. When the films were annealed below 673 K, the coercivity of the films did not change a lot (${\~}$1500 A/m) although the grain size of a crystalline phase in the partially crystallized films increased gradually up to about 16 nm. It then increased rapidly as the films became almost fully crystalline mostly with $\alpha$-(Fe,Si) phase at and above 723 K. On the other hand, the electrical resistivity of the films decreased monotonically with the increase of annealing temperature. The permeabilities of the films annealed at 473${\~}$673 K were all over 1000, showing the optimum value of 3500 at 523 K, and almost constant up to 300 MHz. However, those of the as-deposited and fully crystallized films were lower than 1000 and unstable at the same frequency range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.331-334
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• 1997

The electrical and physical charateristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering, respectively, were analysed with increasing annealing temperature(400~80$0^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin finns was improved. But these properties of aluminum oxide and Pt thin finns on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. The thermal characteristics of Pt micro heater were analysed with Pt-RTD integrated on the same substrate. In the analysis of properties of Pt micro heater. active area was smaller size, Pt micro heater had better thermal characteristics. Temperature of Pt micro heater fabricated on membrane was up to 34$0^{\circ}C$ with 1.2watts of the heating power due to reduction of the external thermal loss.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.320-320
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• 2007

Nowadays, ZnO thin films are investigated as transparent conductive electrodes for use in optoelectronics devices including flat displays, thin films transistors, solar cells because of their unique optical and electrical properties. For the use as transparent conductive electrodes, a film has to have low resistivity, high absorption in the ultra violent light region and high optical transmission in the visible region. Different technologies such as electron beam evaporation, chemical vapor deposition, laser evaporation, DC and RF magnetron sputtering and have been reported to produce thin films of ZnO with adequate performance for applications. However, highly transparent and conductive doped-ZnO thin films deposited by a metal-organic decomposition method have not been reported before. In this work, the effect of dopant concentration, heating treatment and annealing in areducing atmosphere on the structure, morphology, electrical and optical properties of ZnO thin films deposited on glass substrates by a Sol-gel method are investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.573-576
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromium nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5∼25 %)Na$_2$). The deposited CrN thin-films with thickness of 3577${\AA}$ and annealing conditions(300$^{\circ}C$, 48 hr) in Ar-10 % N$_2$deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.