• E2M - 전기 전자와 첨단 소재
• /
• 제8권2호
• /
• pp.196-203
• /
• 1995

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.

• 한국지구물리탐사학회:학술대회논문집
• /
• 한국지구물리탐사학회 2009년도 특별 심포지엄
• /
• pp.73-87
• /
• 2009

Geophysical survey for unconformity-type uranium deposit applied to this study area in Athabaska Basin, Canada were carried out airborne TEM and magnetic, resistivity-induced polarization (DC-IP), puser seismic reflection and well-logging method. The results of airborne survey interpreted the lithological boundary, geological structures, and conductors. Also, these results decided to main targets for ground DC-IP survey. The Low resistivity and the high chargeability slices of 3D modeling interpreted from DC-IP survey response for conductors related to hydrothermal alteration zones and fault-controlled graphitic zones occurring at the unconformity-type uranium deposit, and they confirmed by diamond drilling. Seismic results interpreted to lake bottom surface, alluvium layer and intra-sandstone faults. We suggest the resonable field data acquisition of DC-IP method on the land or the lake in Athabaska Basin.

• 한국재료학회지
• /
• 제9권5호
• /
• pp.533-537
• /
• 1999

ATO(Sb doped $SnO_2$) thin films whose thicknesses were 600, 1100 and $2100\AA$ were prepared by DC magnetron sputtering method. They showed the lowest resistivity at DC sputtering power 0.24kW and had lower resistivity with increasing thickness. The power dependence of resistivity among ATO thin films was also different with thickness. The increase of carrier concentration in ATO thin films was responsible for the decrease of resistivity with thickness increase. ATO thin films which were prepared at 30sccm oxygen flow rate showed a great change of sheet resistance under 1M HCl solution. The investigation of SAM(Scanning Auger Microprobe) revealed that oxygen atomic percentage on the surface of ATO thin films was changed. The decrease of sheet resistance also occurred when ATO thin films, prepared at 30sccm oxygen flow rate, were exposed to air for a long period of time. For this reason, it was considered that the desorption of oxygen on ATO surface was accelerated by HCl.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권9호
• /
• pp.911-917
• /
• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• 한국세라믹학회지
• /
• 제33권5호
• /
• pp.514-518
• /
• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• 대한토목학회논문집
• /
• 제30권1C호
• /
• pp.37-44
• /
• 2010

최근 도심지 재개발, 지하철과 같은 지하공간의 시공 등과 관련하여 도심지 지반조사의 중요성이 부각되고 있으나, 지반내 전기잡음, 교통진동, 지중 매설물 등 많은 장애 요인으로 인하여 도심지 지반조사의 신뢰성은 낮을 수 밖에 없는 상황이다. 이에 본 논문에서는 전기비저항 시험을 도심지에서 수행하고자 할 때 대두되는 가장 큰 장애요인 중 하나인 전기잡음 문제를 최소화할 수 있는 유사직류 전기비저항 기법(Pseudo-DC Resistivity Survey, PDC-R)을 제시하였다. PDC-R 기법은 기존의 전기비저항 시험과는 달리 0.1~1.0Hz 범위의 저주파 교류를 입력전원으로 사용하여 전기비저항 시험을 수행하는 것으로 도심지 전기잡음 성분인 60Hz의 배수가 되는 주파수를 회피함으로써 도심지 전기잡음의 간섭을 최소화하는 것이다. 본 연구에서는 PDC-R 기법의 구현을 위해서 교류 입력전원과 관련된 영향인자, 즉, 표면효과(skin effect), 주파수 효과, 입력전류 크기 등에 대한 연구를 수행하여 최적의 시험조건을 설정하였다. 또한, PDC-R 기법을 자연 지반에 적용하여 기존 전기비저항 시험, CapSASW 시험 등과의 비교를 통하여, PDC-R 기법의 신뢰성과 실용성을 검증하였다.

• The Korean Journal of Ceramics
• /
• 제7권1호
• /
• pp.26-29
• /
• 2001

Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

• 한국재료학회지
• /
• 제14권5호
• /
• pp.328-333
• /
• 2004

Transparent ZnO:Al conductor films for the optoelectronic devices were deposited by using the capacitively coupled DC magnetron sputtering method. The effect of Al doping concentration and discharge power on the electrical and optical properties of the films was studied. The film resistivity of $8.5${\times}$10^{-4}$ $\Omega$-cm was obtained at the discharge power of 40 W with the ZnO target doped with 2 wt% $Al_2$$_O3$. The transmittance of the 840 nm thick film was 91.7% in the visible waves. Increasing doping concentration of 3 wt% $Al_2$$O_3$ in ZnO target results in significant decrease of film resistivity, which may be due to the formation of $Al_2$$O_3$ particles in the as-deposited ZnO:Al film and the reduced ZnO grain sizes. Increasing DC power from 40 to 60 W increases deposition rate by more than 50%, but can induce high defect density in the film, resulting in higher film resistivity.

• 한국전기전자재료학회논문지
• /
• 제17권7호
• /
• pp.738-746
• /
• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

• 한국세라믹학회지
• /
• 제45권1호
• /
• pp.69-74
• /
• 2008

The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.