• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.24-28
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• 1997

Diamond deposition by muti-cathode DC PACVD has been investigated. Five cathodes were independently connected to their own DC power supplies. The voltage and current of each cathods were varied up to 700 V and 3.5 A, respectively. The plasma formation and the diamond deposition behaviour on a substrate of 3 inch in diameter were investigated by optical emission spectroscopy, SEM and Raman spectroscopy. The plasma formed by five cathodes was non-uniform, which was depended on the geometry of cathods array. The growth rate and the quality of diamond film were closely related to the spatial distribution of the plasma.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.27-27
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• 2000

TDEAT precursor를 이용하여 DC-Pulse Plasma MOCVD 방법과 Thermal MOCVD 방법으로 각각 TiN 박막을 증착하였다. 본 논문에서는 DC-Pulse Plasma MOCVD 방 법으로 증착된 TiN 박막과 Therrnal MOCVD 방법으로 증착된 TiN 박막의 전기적 특성에 관하여 비교 분석하였다. 동일한 조건 하에서 각각의 방법으로 증착된 박막은 4-point probe를 이용하여 면저항을 측정하였고, XRD를 이용하여 박막의 성장방향을 관찰하였으며, FE-SEM을 이용하여 박막의 두께와 단면 사진, 표면형상을 관찰하였으며, AES depth profile을 통해 두께에 따른 Ti, N, 잔류 C와 0의 함량을 분석하였으며, XPS를 통해 C의 결합형태를 파악하고자 하였다. 분석결과 DC-Pulse Plasma MOCVD 방법으로 증착된 TiN 박막이 Thermal MOCVD 방법으로 증착된 TiN 박막에 비해 전기적 특성은 매우 우수하였으며, 치밀한 구조의 박막을 가지는 것으로 나타났다. 또한, 잔류 C, O의 함량이 낮은 것으로 나타났다.

• Journal of the Korean institute of surface engineering
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• v.43 no.2
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• pp.91-96
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• 2010

SCM440 steels were nitrided using pulsed dc plasma combined with inductively coupled plasma (ICP) generated by 13.56 MHz rf power in order to enhance case hardening depth. The case hardening depth was increased with rf power. The effective case-depth with ICP at 900 watt was as 1.6 times as that nitrided without ICP. The hardening depth was also increased up to 1.45 times. The compound layers formed on top surface were dense and thin when pulsed dc plasma was combined with ICP.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.501-506
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• 1993

The spatial potential distribution of electron cyclotron resonance plasma is measured as a function of tehsubstrate DC bias by Langmuir probe method. It is observed that the substrate DC bias changes the slope of the plasma potential near the subsrate, resulting in changes in flux and energy of the impinging ions across plasma $_strate boundary along themagnetric field. The effect of the substrate DC bias on the low-temperature silicon homoepitaxy (below $560^{\circ}C$) is examine dby in situ reflection high energy electron diffraction (RHEED), cross-section transmission electron microscopy (XTEM),plan-view TEM and high resolution transmision electron microscopy(HRTEM). While the polycrystalline silicon layers are grow withnegative substrate biases, the single crystaline silicon layers are grown with negative substrate biases, the singel crystalline silicon layers are grown with positive substrate biases. As the substrate bias changes form negative to positive values, the growth rate decreases. It is concluded that the control of the ion energy during plasma deposition is very important in silicon epitaxy at low temperatures below $560^{\circ}C$ by UHV-ECRCVD.VD.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.4
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• pp.417-422
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• 2010

Atmosphere Plasma of Gas Discharge (APGD) has been used in plasma sources for material processing such as etching, deposition, surface modification and so on due to having no thermal damages. The APGD researches on AC source with high frequency have been mainly processed. However, DC APGD studies have been not. In order to understand APGD further, it is necessary to study on fundamental properties of DC APGD. In this paper, we developed a one-dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). Nine kinds of Ar discharge particles such as electron (e), positive ions ($Ar^+$, $Ar_2^+$) and neutral particles ($Ar_m^*$, $Ar_r^*$, $Ar_h^*$, $Ar_2^*$(1), $Ar_2^*$(3) and Ar gas) are considered in the computation. The simulation was worked at the current range of 1~15 [mA]. The characteristics of voltage-current were calculated and the structure of Joule heating were discussed. The spatial distributions of Ar DC APGD and the mechanism of power consumption were also investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.704-710
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• 2000

Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

• Journal of the Korean institute of surface engineering
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• v.37 no.1
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• pp.5-12
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• 2004

The enhancement of adhesion for Cu film on polycarbonate (PC) surface with the $Ar/O_2$ gas plasma treatment and dc-bias sputtering was studied. The plasma treatment with this reactive mixture changes the chemical property of PC surface into hydrophllic one, which is shown by the variation of contact angle with surface modification. The micro surface roughness that also gives the high adhesive environment is increased by the $Ar/O_2$ gas plasma treatment. These results were observed distinctly from the atomic force microscopy (AFM). The negative substrate dc-bias effect for the Cu adhesion on PC was also investifated. Accelerated $Ar^{+}$ lons in sheath area of anode bombard the bare surface of PC during initial stage of dc bias sputtering. PC substrate. therefore, has severe roughen and hydrophilic surface due to the physical etching process with more activated functional group. As dc-bias sputtering process proceeds, morphology of Cu film shows better step coverage and dense layer. The results of peel test show the evidence of superiority of bias sputtering for the adhesion between metal Cu and PC.C.

• Journal of the Korean institute of surface engineering
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• v.55 no.1
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• pp.9-17
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• 2022

This work is concerned with the formation behavior of PEO (Plasma Electrolytic Oxidation) films on Al6082 alloy under the application of direct current (DC) and alternating current (AC) in an alkaline solution. Arc initiation voltage became much lower by the application of AC than DC, and arc initiation time became shorter under DC than AC. The number of pores present in the PEO films was much larger than that on the surface, irrespective of DC and AC. It was also found that the number of pores in the PEO films formed under AC was more than that under DC and the size of pores is smaller under AC than DC. During the formation of PEO films, a lot of heat was generated and solution temperature increased more rapidly under DC than under AC which is attributed to high PEO film formation voltage under DC than AC.

• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.308-318
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• 2022

The surface modification and treatment using thermal plasma were reviewed in academic fields. In general, thermal plasma is generated by direct current (DC) and radiofrequency (RF) power sources. Thermal spray coating, a typical commercial process using thermal plasma, is performed by DC thermal plasma, whereas other promising surface modifications have been reported and developed using RF thermal plasma. Beyond the thermal spray coating, physical and chemical surface modifications were attempted widely. Superhydrophobic surface treatment has a very high industrial demand particularly. Besides, RF thermal plasma system for large-area film surface treatment is being developed. Thermal plasma is especially suitable for the surface modification of low-dimensional nanomaterial (e.g., nanotubes) by utilizing high temperature and rapid quenching. It is able to synthesize and modify nanomaterials simultaneously in a one-pot process.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.216-220
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• 1996

In the present paper, a new type of DC arc plasma torch is disclosed. The principles of the new magnetic and fluid dynamic controlled large orifice long discharge tunnel plasma torch is discussed. Two series of DC Plasma Jet diamond film deposition equipment have been developed. The 20kW Jet equipped with a $\Phi$70 mm orifice torch is capable of deposition diamond films at a growth rate as high as 40$\mu\textrm{m}$/h over a substrate area of $\Phi$65 mm. The 100kW high power Jet which is newly developed based on the experience of the low power model is equipped with a $\Phi$120 mm orifice torch, and is capable of depositing diamond films over a substrate area of $\Phi$110 mm at growth rate as high as 40 $\mu\textrm{m}$/h, and can be operated at gas recycling mode, which allows 95% of the gases be recycled. It is demonstrated that the new type DC plasma torch can be easily scaled up to even higher power Jet. It is estimated that even by the 100kW Jet, the cost for tool grade diamond films can be as low as less than ＄4/carat.