• Title/Summary/Keyword: DC leakage current

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Effect of Sintering Temperature on Electrical Stability of $Pr_{6}O_{11}$-Based ZnO Varistors ($Pr_{6}O_{11}$계 ZnO 바리스터의 전기적 안정성에 소결온도의 영향)

  • 남춘우;류정선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.8
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    • pp.640-646
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    • 2001
  • The electrical stability for DC stress of Pr$_{6}$O$_{11}$-based ZnO varistos consisting of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$-based ceramics were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. A the sintering temperature is raised, the nonlinear exponent of varistors was decreased, whereas the stability was markedly improved. The density of ceramics was found to greatly affect the electrical stability for DC stress. The varistors sintered at 13$25^{\circ}C$ were completely degraded because of thermal runaway attributing to low density. The varistors sintered at 1335$^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 70.53 and a leakage current of 1.92$\mu$A, whereas they did not exhibit relatively high stability. On the contrary, the varistors sintered at >134$0^{\circ}C$ exhibited not only a high nonlinearity marking the nonlinear exponent above 50 and the leakage current below 3$\mu$A, but also a high stability marking the variation rate of the varistor voltage below 2%, even under DC stress such as (0.80V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85V$_{1mA}$/115$^{\circ}C$/12h)+(0.90V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95V$_{1mA}$/15$0^{\circ}C$/12h). In particular, ti was found that the varistors sintered at 134$0^{\circ}C$ were more nonlinear and more stable, compared with that of 1345$^{\circ}C$.EX>.}C$.EX>.

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Degradation Properties of ZnO Surge Arresters Due to Lightning Impulse Currents (뇌임펄스전류에 의한 ZnO 피뢰기의 열화특성)

  • Lee, Su-Bong;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.4
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    • pp.79-85
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    • 2009
  • This paper describes the degradation properties of ZnO surge arresters impressed by lightning impulse currents. To investigate the deterioration behaviors of ZnO surge arresters due to lightning surges, the 8/20[${\mu}s$], 2.5[kA] standard lightning impulse currents were injected to the ZnO surge arrester under test. The power frequency AC and DC leakage currents flowing through the ZnO surge arresters with and without the injection of lightning impulse currents were measured. As a result, the leakage currents are increased and the asymmetry of the AC leakage current is pronounced as the number of injection of the impulse current increases. The ZnO grain of the surge arrester without the injection of lightning surges are uniform but the ZnO grain of the ZnO surge arrester with the injection of lightning impulse currents are deformed. Also, it was found that the decrease of the $Bi_2O_3$ due to the lightning impulse current leads to the lack of grain boundary layer and the current concentrated by the lack of grain boundary layer play an important role to degrade nonlinear property of ZnO surge arrester blocks.

Novel soft switching FB DC-DC converter for reducing conduction losses (도전손실 저감을 위한 새로운 소프트 스위칭 FB DC-DC 컨버터)

  • Kim, E.S.;Joe, K.Y.;Kye, M.H.;Kim, Y.H.;Yoon, B.D.
    • Proceedings of the KIEE Conference
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    • 1996.07a
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    • pp.388-391
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    • 1996
  • The conventional high frequency phase-shifted full bridge DC-DC converter has a disadavantage that a circulating current flows through transformer and switching devices during the freewheeling interval Due to this circulating current, RMS current stress, conduction losses of transformer and switching devices are increased. To alleviate this problem, this study provides a novel circulating current free type high frequency soft switching phase-shifted full bridge DC-DC converter which applies the energy recovery snubber(ERS) attached at the secondary side of transformer. The ERS adopted in this study is consisted of three fast recovery diode($Ds_1$, $Ds_2$, $Ds_3$), two resonant capacitor($Cs_1$, $Cs_2$) and a small resonant inductor [(Lr) : It can be ignored because the transformer leakage inductance(Ll) is able to use in stead of inserting the resonant inductor(Lr)]

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Study on DC Characteristics of 4H-SiC Recessed-Gate MESFETs (Recessed-gate 4H-SiC MESFET의 DC특성에 관한 연구)

  • Park, Seung-Wook;Hwang, Ung-Jun;Shin, Moo-Whan
    • Korean Journal of Materials Research
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    • v.13 no.1
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    • pp.11-17
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    • 2003
  • DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.

Analysis and Implementation of a DC-DC Converter with an Active Snubber

  • Lin, Bor-Ren;Lin, Li-An
    • Journal of Power Electronics
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    • v.11 no.6
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    • pp.779-786
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    • 2011
  • This paper presents a soft switching converter to achieve the functions of zero voltage switching (ZVS) turn-on for the power switches and dc voltage step-up. Two circuit modules are connected in parallel in order to achieve load current sharing and to reduce the size of the transformer core. An active snubber is connected between two transformers in order to absorb the energy stored in the leakage and magnetizing inductances and to limit the voltage stresses across the switches. During the commutation stage of the two complementary switches, the output capacitance of the two switches and the leakage inductance of the transformers are resonant. Thus, the power switches can be turned on under ZVS. No output filter inductor is used in the proposed converter and the voltage stresses of the output diodes is clamped to the output voltage. The circuit configuration, the operation principles and the design considerations are presented. Finally, laboratory experiments with a 340W prototype, verifying the effectiveness of the proposed converter, are described.

The characteristic of leakage current in ZnO surge arrestor elements with mixed direct and 60Hz voltage (중첩전압(직류+교류 60Hz)에서 산화아연 피뢰기 소자의 누설전류 특성)

  • Lee, B.H.;Pak, K.Y.;Kang, S.M.;Choi, H.S.;Oh, S.K.
    • Proceedings of the KIEE Conference
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    • 2003.10a
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    • pp.186-188
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    • 2003
  • The ZnO surge arrester is the protective device for limiting surge voltages on equipment by diverting surge current and returning the device to its original status. The occurrence of overvoltage appears in any phase to AC power supply system and it appears in mixing AC and impulse voltages, moreover because HVDC power supply system uses converter in semiconductor, it makes mixed DC and high harmonics voltages. In this study, the various mixed AC and DC voltages was made for investigating the degradation effect of ZnO arrester according to mixed voltage. As a result, the increase of DC component to mixed voltages causes the increase of resistive component of total leakage current to ZnO block. In changing V-I curve for mixed voltages, the cross-over point acts a factor as making the proper capacitor size of an equivalent circuit for ZnO block.

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High Step-up Active-Clamp Converter with an Input Current Doubler and a Symmetrical Switched-Capacitor Circuit

  • He, Liangzong;Zeng, Tao;Li, Tong;Liao, Yuxian;Zhou, Wei
    • Journal of Power Electronics
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    • v.15 no.3
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    • pp.587-601
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    • 2015
  • A high step-up dc-dc converter is proposed for photovoltaic power systems in this paper. The proposed converter consists of an input current doubler, a symmetrical switched-capacitor doubler and an active-clamp circuit. The input current doubler minimizes the input current ripple. The symmetrical switched-capacitor doubler is composed of two symmetrical quasi-resonant switched-capacitor circuits, which share the leakage inductance of the transformer as a resonant inductor. The rectifier diodes (switched-capacitor circuit) are turned off at the zero current switching (ZCS) condition, so that the reverse-recovery problem of the diodes is removed. In addition, the symmetrical structure results in an output voltage ripple reduction because the voltage ripples of the charge/pump capacitors cancel each other out. Meanwhile, the voltage stress of the rectifier diodes is clamped at half of the output voltage. In addition, the active-clamp circuit clamps the voltage surges of the switches and recycles the energy of the transformer leakage inductance. Furthermore, pulse-width modulation plus phase angle shift (PPAS) is employed to control the output voltage. The operation principle of the converter is analyzed and experimental results obtained from a 400W prototype are presented to validate the performance of the proposed converter.

Analysis of Generalized n-winding Coupled Inductor in dc-dc Converters

  • Kang, Taewon;Suh, Yongsug
    • Proceedings of the KIPE Conference
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    • 2017.07a
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    • pp.88-89
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    • 2017
  • This paper investigates the design of multi-winding coupled inductor for minimum inductor current ripple in rapid traction battery charger systems. Based on the general circuit model of multi-winding coupled inductor together with the operating principles of dc-dc converter, the relationship between the ripple size of inductor current and the coupling factor is derived under the different duty ratio. The optimal coupling factor which corresponds to a minimum inductor ripple current becomes -(1/n-1), i.e. a complete inverse coupling without leakage inductance, as the steady-state duty ratio operating point approaches 1/n, 2/n, … or (n1)/n. In an opposite manner, the optimal coupling factor value of zero, i.e. zero mutual inductance, is required when the steady-state duty ratio operating point approaches either zero or one.

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Leakage Current Energy Harvesting Application in a Photovoltaic (PV) Panel Transformerless Inverter System

  • Khan, Md. Noman Habib;Khan, Sheroz
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.4
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    • pp.190-194
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    • 2017
  • Present-day solar panels incorporate inverters as their core components. Switching devices driven by specialized power controllers are operated in a transformerless inverter topology. However, some challenges associated with this configuration include the absence of isolation, causing leakage currents to flow through various components toward ground. This inevitably causes power losses, often being also the primary reason for the power inverters' analog equipment failure. In this paper, various aspects of the leakage currents are studied using different circuit analysis methods. The primary objective is to convert the leakage current energy into a usable DC voltage source. The research is focused on harvesting the leakage currents for producing circa 1.1 V, derived from recently developed rectifier circuits, and driving a $200{\Omega}$ load with a power in the milliwatt range. Even though the output voltage level is low, the harvested power could be used for charging small batteries or capacitors, even driving light loads.

Electrical Conduction Mechanism of AIN Insulator thin Film Fabricated by Reactive Sputtering Method for the Application of MIS Device (반응성 스퍼터링으로 제조한 MIS 소자용 AIN 절연박막의 전기전도 메커니즘)

  • Park, Jung-Cheul;Kwon, Jung-Youl;Lee, Heon-Yong;Chu, Soon-Nam
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.4
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    • pp.751-755
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    • 2007
  • We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below $10^{-9}A/cm^2$ at the deposition temperature of $250^{\circ}C\;and\;300^{\circ}C$ in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.