• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1609-1611
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• 2007

The owner of underground metallic structures (gas pipeline, oil pipeline, water pipeline, etc) has a burden of responsibility for the corrosion protection in order to prevent big accidents like gas explosion, soil pollution, leakage and so on. So far, Cathodic Protection(CP) technology have been implemented for protection of underground systems. The stray current from DC subway system in Korea has affected the cathodic protection (CP) system of the buried pipelines adjacent to the railroads. In this aspect, KERI has developed a various mitigation method, drainage system through steel bar under the rail, a stray current gathering mesh system, insulation method between yard and main line, distributed ICCP(Impressed Current Cathodic System), High speed response rectifier, restrictive drainage system, Boding ICCP system. In this paper, the mechanism of mitigation method of DC stray current for underground metallic structures is described.

• Journal of Power Electronics
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• v.10 no.3
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• pp.235-244
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• 2010

This paper presents a new isolated soft-switching bidirectional buck-boost inverter for fuel cell applications. The buck-boost inverter combines an isolated DC-DC converter with a conventional inverter to implement buck-boost DC-DC and DC-AC conversion. The main switches achieve zero voltage switching and zero current switching by using a novel synchronous switching SVPWM and the volume of the transformer in the forward and fly-back mode is also minimized. This inverter is suitable for wide input voltage applications due to its high efficiency under all conditions. An active clamping circuit reduces the switch's spike voltage and regenerates the energy stored in the leakage inductance of the transformer; therefore, the overall efficiency is improved. This paper presents the operating principle, a theoretical analysis and design guidelines. Simulation and experimental results have validated the characteristics of the buck-boost inverter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.415-418
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• 2001

The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.373-378
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• 2006

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with Al cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that OLED with Al cathode layer prepared by BCS has much lower leakage current density ($1{\times}10^{-5}\;mA/cm^2$ at -6 V) than that $(1{\times}10^{-2}{\sim}-10^0\;mA/cm^2)$ of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and DC/RF sputtering in fabrication process of organic based optoelectronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.53-54
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• 2005

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• Journal of Institute of Control, Robotics and Systems
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• v.10 no.3
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• pp.286-293
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• 2004

This paper presents the result of a study on the starter control for a turbo generator. Because a starter in gear box type turbo-generator system is composed of gearbox and brush DC motor, it should be replaced with High Speed Generator(HSG)) in HSG type Turbo-generator. There-ore, it is necessary to design a new starting algorithm and starter. In gearbox type system, brush DC motor is rotated to the designed speed using low voltage-high current battery power. After brush DC motor speed is increased to several times by gearbox, gas turbine engine can be rotated to designed starting speed. If we implement a starter with High Speed Generator(HSG), it is necessary to drive high-speed generator to high-speed motor. High-speed generator with permanent magnet on rotor has a low leakage inductance fur driving high-speed rotation, and it is necessary high DC link voltage for inverter when High-speed generator is driven to high speed. This paper presents result of development of the boost converter for converting high voltage DC from low battery voltage and design of the inverter for controlling a high frequency current to be injected to motor winding. Also, we show performance of the designed starter by driving the turbo generator.

• Proceedings of the KSR Conference
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• 2004.06a
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• pp.1297-1302
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• 2004

In DC power distribution system for urban rail transits potential relay, 64P, is used to detect the ground faults. The problem with this 64P is that though it detects the ground fault it cannot identify the faulted region. Therefore the faulted region cannot be isolated properly. It could results in power loss of the trains on the healthy regions and the safety of the passengers in the trains could be affected adversely. A new ground fault protective relaying scheme that can identify the faulted region is presented in this paper. The new concept uses the current differential scheme and the permissive scheme to identify the faulted region correctly. A device with similar characteristic to the arrestor is adapted to use the current relay for the ground fault detection. The role of the device is to block the ground leakage current in normal operating condition and enable the ground fault current to flow in ground fault condition. The algorithm of the new relay and the effect of the newly adapted device in the new relaying scheme are discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.808-814
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• 2001

The electrical properties and stabiltiy of Pr$_{6}$O$_{11}$ -based ZnO varistors, which are composed of ZnO-Pr$_{6}$O$_{11}$-Cr$_{2}$O$_{3}$-Er$_{2}$O$_{3}$ based ceramics, were investigated in the Er$_{2}$O$_{3}$ content range of 0.5 to 2.0 mol%. As Er$_{2}$O$_{3}$content is increased up to approximaterly 1.0mol%, the nonlinearity was decreased. Increasing Er$_{2}$O$_{3}$ content further caused the nonlinearity to increase. The varistors with 2.0 mol% Er$_{2}$O$_{3}$ exhibited a high nonlinearity, in which the nonlinear exponent is 47.41 and the leakage current is 1.82 $\mu$A. Furthermore, they showed a very excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent, and leakage current are -0.52%, -4.09%, and 152.75%, respectively, under DC accelerated aging stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12h).2h).TEX>/12h).2h).

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.309-315
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• 2010

A fully-differential low-voltage low-power electrocardiogram (ECG) amplifier by using the nonfeedback PMOS pseudo-resistors is proposed. It consists of two operational-transconductance amplifiers (OTA) in series (a preamplifier and a variable-gain amplifier). To make it insensitive to the gate leakage current of the OTA input transistor, the feedback pseudo-resistor of the conventional ECG amplifier is moved to input branch between the OP amp summing node and the DC reference voltage. Also, an OTA circuit with a Gm boosting block without reducing the output resistance (Ro) is proposed to maximize the OTA DC gain. The measurements shows the frequency bandwidth from 7 Hz to 480 Hz, the midband gain programmable from 48.7 dB to 59.5 dB, the total harmonic distortion (THD) less than 1.21% with a full voltage swing, and the power consumption of 233 nW in a 0.13 ${\mu}m$ CMOS process at the supply voltage of 0.7 V.