• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.216-219
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• 2000

A Ka Band 3-stage MMIC (Monolithic Microwave Integrated Circuits) LNA(Low Noise Amplifiers) has been designed. The MMIC LNA consists of two single-ended type amplication stapes and one balanced type amplication stage to satisfy noise figure characteristics and high gain and amplitude linearity. The 0.15um pHEMT has been used to provide a ultra low noise figure and high gain amplification. Series and Shunt feedback circuits were inserted to ensure high stability over frequency range of DC to 80 GHz. The size of designed MMIC LNA is 3100mm ${\times}$ 2400um(7.44$\textrm{mm}^2$). The on wafer measured noise figure of the MMIC LNA is less than 2.0 dB over frequency range of 22 GHz to 30 GHz.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.229-229
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• 2000

Conventional gain-tuning methods such as Ziegler-Nickels methods, have many disadvantages that optimal control ler gain should be tuned manually. In this paper, modified PID controllers which include self-tuning characteristics are proposed. Proposed controllers automatically tune the PID gains in on-1ine using neural networks. A new learning scheme was proposed for improving learning speed in neural networks and satisfying the real time condition. In this paper, using a nonlinear mapping capability of neural networks, we derive a tuning method of PID controller based on a Back propagation(BP)method of multilayered neural networks. Simulated and experimental results show that the proposed method can give the appropriate parameters of PID controller when it is implemented to DC Motor.

• Journal of IKEEE
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• v.16 no.2
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• pp.116-120
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• 2012

We reported on a high performance InGaAs/InAlAs metamorphic HEMT with 50 nm gate length on a GaAs substrate. The fabricated $50nm{\times}60{\mu}m$ MHEMT showed good DC and RF characteristics. Typical drain current density of 740 mA/mm and extrinsic transconductance(gm) of 1.02 S/mm were obtained with our devices. The current gain cut-off frequency(fT) and maximum oscillation frequency(fmax) obtained for the fabricated MHEMT device were 430 GHz and 406 GHz, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.5
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• pp.974-980
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• 1997

The 23GHz 1-state LNA was designed by using MPIE numerical analysis and conventional design EEsof softwares. The circuit was designed using conventional tools but analyzed and modified by using numerical MPIE tools. he matching sections was designed with parallel coupled filter-type, which gives impedance matching and DC blocking and has small discontinuities. THe FET chip is directly attached to the graound metal. The designed LNA gives 5.8dB gain and 2.5dB noise figure withoug considering the loss and impedance shift of connectors that degenerate the gain and noise figure considerably. this results gives very promising characteristics for our design process and matching schemes and fabrication technologies.

• Journal of Navigation and Port Research
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• v.27 no.5
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• pp.505-511
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• 2003

In this paper, a driving amplifier stage with 1 Watt output has been designed and fabricated, which is operating at UHF band( 470 ∼ 806 MHz) for digital TV repeater. In the driving amplifier stage, preamplifier and 1 Watt unit amplifier are integrated by one electric substrate which is 2.53 in dielectric constant and 0.8 mm thickness. When the driving amplifier stage is flown by bias voltage of 28 V DC and current of 900 mA. it has the gain of more than 53.5 dB. the gain flatness of $\pm$0.5 dB and return loss of less than -15 dB in 470 ∼ 806 MHz. Also, when two signals at 2 MHz frequency interval are input port into the driving amplifier stage with 1 Watt output, it resulted in excellent characteristics to designed specification with showing intermodulation distortion characteristics of more than 48 dBc.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.261-264
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• 2005

This paper presents the design of a down-conversion mixer with built-in active balun integrated in a $0.25\;{\mu}m$ pHEMT process. The active balun consists of series-connected common-gate FET and common-source FET. The designed balun achieved broadband characteristics by optimizing gate-width and bias condition for the reduction in parasitic effect. From DC to more than 6GHz, the active balun shows the phase error of less than 3 degree and the gain error of less than 0.4 dB. A single-balanced down-conversion mixer with built-in broadband active balun has been designed with optimum width, load resistor and bias for conversion gain and without any matching component for broadband operating. The designed mixer whose size of including on-chip bias circuit is $1\;mm{\times}1\;mm$ shows the conversion gain of better than 7 dB from 2 GHz to 6 GHz and $P_{1dB}$ of -10 dBm at 5.8 GHz

• Journal of the Korean Society for Precision Engineering
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• v.16 no.1 s.94
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• pp.265-271
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• 1999

In the feed drive systems or the spindle systems of machine tools that consist of many mechanical components, a torsional vibration is often generated because of its elastic elements in torque transmission-Generally, the accuracy of motion control system is strongly influenced by the dynamic behavior of coupled transmission components Especially, a torsional vibration caused by the elasticity of mechanical elements might deteriorate the quick movement of system and lead to shorten the life time of the mechanical transmission elements. So, it is necessary to analyze the electromechanical system mathematically to optimize the dynamic characteristics of the feed m1d spindle system. In this paper, based on the DC motor model, a model of electro-drive system with motor has been developed and an optimal criterion for tuning the gain of speed controller is discussed. The frequency bandwidth of the system and the damping ratio in time domain are optimal design specifications for the gain adjustment speed controller. The gains of PI speed controller are then derived from the bandwidth and damping ratio, and those relationships have been classified.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1120-1122
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• 1999

In the design of vehicle glass antenna system, it is essential to use preamplifier between the glass antenna and the TV set, since glass antenna has low gain. In this paper, the preamplifier has been designed in the frequency range from 50MHz to 900MHz with the gam of 10dB. A negative feedback technique has been employed for the wideband characteristics of the amplifler. A DC block capacitor is also used to obtain flat gain response in the wide frequency range. The experimental result shows 1dB ripple in 9dB gain and 0.5dB ripple in 3dB noise figure. The test results were compared with those of the performed by the EEsof-touchstone.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.10-14
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• 2019

Radio-frequency (RF) amplifiers based on direct current (DC) superconducting quantum interference device (SQUID) have low-noise performance for precision physics experiments. Gain curves of SQUID RF amplifiers depend on several parameters of the SQUID and operation conditions. We are developing SQUID RF amplifiers for application to measure very weak RF signals from ultra-low-temperature high-magnetic-field microwave cavity in axion search experiments. In this study, we designed, fabricated and characterized SQUID RF amplifiers with different SQUID parameters, such as number of input coil turn, shunt resistance value of the junction and coupling capacitance in the input coil, and compared the results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.106-113
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• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.