• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.5
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• pp.345-351
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• 2018

A distributed control method is proposed to improve the power sharing performance of bidirectional distributed generators and the voltage regulation performance of a DC bus in a DC microgrid. Voltage sensitivity analysis based on power flow analysis is conducted to analyze the structural characteristics of a DC microgrid. A distributed control method using a voltage sensitivity matrix is proposed on the basis of this analysis. The proposed method uses information received through the communication system and performs the droop gain variation method and voltage shift method without additional PI controllers. This approach achieves improved power sharing and voltage regulation performance without output transient states. The proposed method is implemented through a laboratory-scaled experimental system consisting of two bidirectional distributed generators, namely, a load and a non-dispatchable distributed generator in a four-bus ring-type model. The experimental results show improved power sharing accuracy and voltage regulation performance.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.4_2
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• pp.491-499
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• 2021

Batteries are widely used for energy storage, such as ESS(Energy Storage System), electric vehicles, electric aircraft, and electric powered ships. Among them, a submarine uses a high power battery for an energy storage. When the battery of a submarine is discharged, a diesel generator generates AC power, and then AC/DC power converter change AC power to DC power for charging the battery. Therefore, in order to lower the current capacity of the diesel generator, it is necessary to use an AC/DC converter with a high input power factor. And, a power converter with a large power capacity must have high stability because it can lead to a major accident when a failure occurs. However, the control algorithm using the traditional PI controller is difficult to satisfy stability and dynamic characteristics. In this paper, we design the high power AC/DC converter with high input power factor for battery charging systems. And, we propose a stable control algorithm. The validity of the proposed method is verified through simulation and experiments.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.7-12
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• 2004

In this paper, CPW wideband distributed amplifier was designed and fabricated using 0.1 $\mum$ InGaAs/InAlAs/GaAs Metamorphic HEMT(High Electron Mobility Transistor). The DC characteristics of MHEMT are 442 mA/mm of drain current density, 409 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 140 GHz and the maximum oscillation frequency(fmax) is 447 GHz. The distributed amplifier was designed using 0.1 $\mum$ MHEMT and CPW technology. We designed the structure of CPW curve, tee and cross to analyze the discontinuity characteristics of the CPW line. The MIMIC circuit patterns were optimized electromagnetic field through momentum. The designed distributed amplifier was fabricated using our MIMIC standard process. The measured results show S21 gain of above 6 dB from DC to 45 GHz. Input reflection coefficient S11 of -10 dB, and output reflection coefficient S22 of -7 dB at 45 GHz, respectively. The chip size of the fabricated CPW distributed amplifier is 2.0 mm$\times$l.2 mm.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1179-1181
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• 1992

A discrete Pl controller is implemented easily using a micro-processor, and it can be confirmed to a adaption of a system and real time processing. In this paper, a speed controller by discrete Pl control using a IBM PC/AT(12MHz) as a micro-processor is implemented and applied to a DC servo motor. In designing the discrite Pl controller, a sampling time and a speed is accepted from key-board, and is processed the control coefficient automatically, and than calculate the gain. Therefore the speed of a DC servo motor is obtained and controlled regulaly. The designed and manufactured discrete Pl control system is experimented. The result shows the good response at the 60 RPM to 250 RPM on the load using the load-spring. The speed error is under 1% on the steady load, but nearly 2-3% on the transient load.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.105-111
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• 2004

In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.659-662
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• 1999

As utility pollution take a growing interest, ac/dc converter optimizing utility condition has been vigorously studied in decades. In this paper three phase DCM converter is analyzed and equations for average input currents are presented. Also relationships of voltage gain & duty according to angular velocity are presented and variable frequency controller is implemented using reset integrator which is designed in detail. In result power factor and THD characteristics of 3-stage and 4-stage operation ae compared respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.135-141
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• 1994

A linear BiCMOS operational transconductance amplifier (OTA) is described. It consists of a CMOS linear transconductor and a bipolar translineear current gain cell followed by three CMOS current mirrors. The proposed circuit has comparable linearity and temperature stability but superior dc characteristics to its bipolar counterpart. A test circuit with a transconductance of 47.3$\mu$s has been simulated. Simulation results show that a linearity error of less than $\pm$1 percent over an input volgate range from -1.0 to 1.0 V and a output dc offset current as small as-3.6 nA can be obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.67-70
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• 2000

In this paper, all SCR recombination currents including setback and graded layer's recombination currents are analytically introduced for the first time. Different emitter-base structures are tested to prove the validity of the model. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. In this paper, recombination current model included setback layer and graded layer is proposed. New recombination current model also includes abrupt heterojunction's recombination current model. In this paper, new recombination current model analytically explains effects of setback layer and graded layer.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.35-42
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• 2013

In this paper, the analog performance of FinFET structure was estimated by extracting the DC/AC characteristics of the 22 nm process FinFET structures with different layout considering spacer and SEG using 3D device simulator, Sentaurus. Based on the analysis results, layout methods to enhance the analog performance of multi-fin FinFET structures are proposed. By adding the spacer and SEG structures, the drive current of 1-fin FinFET increases. However, the unity gain frequency, $f_T$, reduces by 19.4 % due to the increase in the total capacitance caused by the added spacer. If the process element is not included in multi-fin FinFET, replacing 1-finger with 2-finger structure brings approximately 10 % of analog performance improvement. Considering the process factors, we propose methods to maximize the analog performance by optimizing the interconnect and gate structures.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.189-193
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• 2005

In this paper, we propose a direct conversion double-balanced down-converter fer MB-OFDM W system, which is implemented using $0.18\;{\mu}m$ CMOS technology and its measurement results are shown. The proposed down-converter adopts a resistive current-source instead of general transconductance stage using MOS transistor to achieve wideband characteristics over RF input frequency band $3\~5\;GHz$ with good gain flatness. The measured conversion gain is more than +3 dB, and gain flatness is less than 3 dB for three UWB channels. The dc consumption of this work is only 0.89 mA from 1.8 V power supply, leading to the low-power W application.