• The Transactions of the Korean Institute of Power Electronics
• /
• v.11 no.5
• /
• pp.409-416
• /
• 2006

Operating Characteristics of LLC Series resonant converter with a LLT(Inductor-Inductor-Transformer) transformer is presented. LLT transformer used to combine the inductor and transformer into one unit has the increased leakage inductance in the primary and secondary due to the winging method and the use of the gaped core. The increased leakage inductance in the primary and secondary of LLT transformer can be impacted on the DC voltage gain characteristics of LLC series resonant converter. In the paper, DC gain characteristics and the experimental results of the LLC series resonant converter with a LLT transformer are verified on the simulation based on the theoretical analysis and the 400W experimental prototype.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.12 no.6
• /
• pp.472-482
• /
• 2007

The LLC series resonant converter with a LLT (Inductor-Inductor-Transformer) transformer design process and experimentation results for PDP TV power supply is presented. LLT transformer used to combine the inductor and transformer into one unit has the increased leakage inductance in the primary and secondary due to the winding method and the use of the gaped core. The increased leakage inductance in the primary and secondary of LLT transformer can be impacted on the DC voltage gain characteristics of LLC series resonant converter, In this paper, DC gain characteristics and the experimental results of the LLC series resonant converter with a LLT transformer are verified on the Math-CAD simulation based on the theoretical analysis and the 600W experimental prototype.

• International Journal of Fuzzy Logic and Intelligent Systems
• /
• v.7 no.1
• /
• pp.77-84
• /
• 2007

In this paper, Takagi-Sugeno (TS) fuzzy integral control is investigated to regulate the output voltage of an asymmetric half-bridge (AHB) DC/DC converter; First, we model the dynamic characteristics of the AHB DC/DC converter with state-space averaging method and small perturbation at an operating point. After introducing an additional integral state of the output regulation error, we obtain the $5^{th}$-order TS fuzzy model of the AHB DC/DC converter. Second, the concept of the parallel distributed compensation is applied to design the fuzzy integral controller, in which the state feedback gains are obtained by solving the linear matrix inequalities (LMIs). Finally, simulation results are presented to show the performance of the considered design method as the output voltage regulator and compared to the results for which the conventional loop gain method is used.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.18 no.5
• /
• pp.429-436
• /
• 2013

In this paper, For achieving the high gain and resonant characteristics in both of the power flow directions, a bidirectional resonant dc-dc converter with auxiliary switches is proposed. Auxiliary switches are connected in the primary and secondary side of the bidirectional resonant dc-dc converter, respectively. A 800W prototype bidirectional resonant dc-dc converter for interfacing the 400V DC buses in the energy storage system is built and tested to verify the validity and applicability of this proposed converter.

• Proceedings of the KIPE Conference
• /
• 2007.07a
• /
• pp.424-427
• /
• 2007

The LLC series resonant converter with a LLT (Inductor-Inductor-Transformer) transformer for PDP power supply is presented. LLT transformer used to combine the inductor and transformer into one unit has the increased leakage inductance in the primary and secondary due to the winding method and the use of the gaped core. The increased leakage inductance in the primary and secondary of LLT transformer can be impacted on the DC voltage gain characteristics of LLC series resonant converter. In this paper, DC gain characteristics and the experimental results of the LLC series resonant converter with a LLT transformer are verified on the Math-CAD simulation based on the theoretical analysis and the 600W experimental prototype.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.9 no.2
• /
• pp.171-177
• /
• 2004

Piezoelectric transformer(PZT) can be used advantageously in high output voltage power supply. Recently, it also can be used in AC/DC Converter for miniaturizing size nd lightening weight. The modeling of PZT was performed by the calculation method through the physical and electrical constants of the material. The attributes of PZT were derived by an approximate analysis for output voltage gain, and resonant frequency. The proposed method is verified by computer simulation and experiment.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.23 no.7
• /
• pp.20-28
• /
• 2009

This paper presents the design of zero current switching ZCS pulse frequency modulation type DC-DC converter for magnetron power supply. A magnetron serving as the microwave source in a microwave oven is driven by a switch mode power supply (SMPS). SMPSs have the advantages of improved efficiency, reduced size and weight, regulation and the ability to operate directly from the converter DC bus. The demands of the load system and the design of the power supply required to produce constant power at 4[kV]. A magnetron power supply requires the ability to limit the load current under short circuit conditions. The current source series resonant converter is a circuit configuration which can achieve this. The main features of the proposed converter are an inherent protection against a short circuit at the output, a high voltage gain and zero current switching over a large range of output power. These characteristics make it a viable choice for the implementation of a high voltage magnetron power supply.

• Proceedings of the KIPE Conference
• /
• 2012.07a
• /
• pp.41-42
• /
• 2012

For achieving the high gain and resonant characteristics in both of the power flow directions, a bidirectional resonant dc-dc converter with auxiliary switches is proposed. Auxiliary switches are connected in the primary and secondary side of the bidirectional resonant dc-dc converter, respectively. A 1kW prototype bidirectional resonant dc-dc converter for interfacing the 400V DC buses in the energy storage system is built and tested to verify the validity and applicability of this proposed converter.

• Journal of Sensor Science and Technology
• /
• v.30 no.6
• /
• pp.436-440
• /
• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

• Proceedings of the IEEK Conference
• /
• 2002.06b
• /
• pp.249-252
• /
• 2002

we have studied the characteristics of PHEMT's with gate recess etching method. The DC characterization of PHTMT fabricated with the wide single recess methods is a maximum drain current density of 319.4 ㎃/mm and a peak transconductance of 336.7 ㎳/mm. The RF measurements were obtained in the frequency range of 1~50GHz. At 50GHz, 3.69dB of 521 gain were obtained and a current gain cut-off frequency(f$_{T}$) of 113 CH and a maximum frequency of oscillation(f$_{max}$) of 172 Ghz were achieved from this device. On the other hand, a maximum drain current of 367 mA/mm, a peak transconduclancc of 504.6 mS/mm, S$_{21}$ gain of 2.94 dB, a current gain cut-off frequency(f$_{T}$) of 101 CH and a maximum frequency of oscillation(f$_{max}$) of 113 fa were achieved from the PHEMT's fabricated by the .narrow single recess methods.methods.