• Title/Summary/Keyword: DC field

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TID and SEL Testing on PWM-IC Controller of DC/DC Power Buck Converter (DC/DC 강압컨버터의 PWM-IC 제어기의 TID 및 SEL 실험)

  • Lho, Young Hwan;Hwang, Eui Sung;Jeong, Jae-Seong;Han, Changwoon
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.41 no.1
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    • pp.79-84
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    • 2013
  • DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a PWM-IC (pulse width modulation-integrated circuit) controller, a MOSFET (metal-oxide semiconductor field effect transistor), inductor, capacitor, etc. It is shown that the variation of threshold voltage and the offset voltage in the electrical characteristics of PWM-IC increase by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 4 heavy ions applied for SEL (Single Event Latch-up) make the PWM pulse unstable. Also, the output waveform for the given input in the DC/DC converter is observed by the simulation program with integrated circuit emphasis (SPICE). TID testing on PWM-IC is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the PWM operation is studied at SEL testing after implementation of the controller board.

TID and SEGR Testing on MOSFET of DC/DC Power Buck Converter (DC/DC 강압컨버터용 MOSFET의 TID 및 SEGR 실험)

  • Lho, Young Hwan
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.42 no.11
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    • pp.981-987
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    • 2014
  • DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a MOSFET (metal-oxide semiconductor field effect transistor), a PWM-IC (pulse width modulation-integrated circuit) controller, inductor, capacitor, etc. It is shown that the variation of threshold voltage and the breakdown voltage in the electrical characteristics of MOSFET occurs by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 5 heavy ions make the gate of MOSFET broken in SEGR (Single Event Gate Rupture) testing. TID testing on MOSFET is accomplished up to the total dose of 40 krad, and the cross section($cm^2$) versus LET(MeV/mg/$cm^2$) in the MOSFET operation is studied at SEGR testing after implementation of the controller board.

Four Quadrant Operations of DC Separately-Excited Motor by the Two Phase Chopper System with Combined Output (2상2중 쵸퍼방식에 의한 직류타여자전동기의 4상한동작)

  • 정연택;한경희;김용주;이승환;방이석
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.39 no.4
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    • pp.349-356
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    • 1990
  • In order to control DC motors for electric cars by chopper system, four quadrant operations - forward powering, forward regenerative braking, reverse powering, reverse regenerative braking - are needed. For the four quadrant operations, the separately - excited DC motors are used in this study. The conversion of each quadrant operation has been obtained by 1) adopting the two phase chopper system with combined output for the armature control, and 2) the single phase chopper system for the field control.

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LARGE EDDY SIMULATION OF VORTEXING FLOW IN THE MOLD WITH DC MAGNETIC FIELD

  • Zhongdong Qian;Yulin Wu
    • Journal of computational fluids engineering
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    • v.10 no.1
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    • pp.56-62
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    • 2005
  • Large eddy simulation of vortexing flow of molten steel in the continuous casting mold with and without DC magnetic field was conducted. The influence of the position of magnetic field to the residence time and depth of the vortex was analyzed. The mechanism of the influence of magnetic field to the vortexing flow was found. The computational results show that the vortexing flow is the result of shearing of the two un-symmetric surface flows from the mold narrow faces when they meet adjacent to the SEN; the un-symmetric flow for turbulent vortex is caused by turbulent energy of the fluid and that for biased vortex is caused by biased flow and the turbulent energy of fluid; with the moving of the magnetic field from the centerline of the outlet of the SEN to the free surface, the surface velocity is decreased gradually and the depth of the turbulent vortex and the biased vortex is decreased, the residence time is increased with the magnetic field moves from DL=120mm to DL=60mm and then decreased; the turbulent vortex and the biased vortex can be eliminated when the magnetic field is located at the free surface.

The Measurement of Electromagnetic Waves caused by Surface Discharges of Solide Insulator at VHF Band Using an Antenna (안테나를 이용한 VHF대역에서 고체절연체의 연면방전에 기인한 방사전자파의 측정)

  • Kim, Ch.N.;Park, K.S.;Kim, K.C.;Lee, K.S.;Lee, D.I.
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.219-223
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    • 2001
  • In this paper, electromagnetic waves were measured in accordance with propagating the discharge when positive and negative DC high voltage was applied to needle-plane electrdes and plane-plane electrdes that solid dielectric was inserted between the electrodes. The radiated electromagnetic waves were investigated in bandwidth of VHF($30{\sim}230$[MHz]) using an biconical antenna. In needle-plane electrodes high electric field intensity is shown in both frequency band of 90(MHz) and 170[MHz], and gradually decreasing characteric is appeared at high frequency band. However high electric field intensity is shown in both 80[MHz] and 140[MHz] in case of plane-plane electrodes configuration. And over 150[MHz] frequency band, rapidly decreasing characteristic is shown. Moreover, electric field intensity of positive DC is about $5{\sim}10$[dB] higher than negative DC.

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High-Speed Deposition of Diamond Films by DC Plasma Jet (직류 플라즈마 제트를 이용한 고속 다이아몬드 막 증착기술)

  • Kim, Won-Kyu;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.949-951
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    • 1992
  • A low pressure DC plasma jet has been used to obtain diamond films from a mixture of $CH_4$ and $H_2$ with high deposition rate (>1$\mu\textrm{m}$/min). The effects of the deposition conditions such as torch geometry, substrate temperature, gas mixing ratio, chamber pressure, axial magnetic field on the diamond film properties such as morphology, purity, uniformity of the film and deposition rate, etc. have been examined with the aid of Scanning Electron Microscopy, X-Ray Diffraction, and Raman Spectroscopy. Both the growth rate and particle size increased rapidly for low methane concentrations but saturated and the morphology changed from octahedral to cubic structure when the concentration exceeded 1.0 %. Higher growth rates (>1.5${\mu}m$/min) can be obtained by applying an axial magnetic field to the DC plasma jet. Diamond obtained from the magnetized plasma jet also shows a sharp peak at 1332.5$cm^{-1}$ in the Raman Spectra and this result implies that higher growth rate with a good quality diamond films can he obtained by applying an external magnetic field to the plasma jet.

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Smart Far-Field Wireless Power Transfer via Time Reversal (시간 역전을 기반으로 한 지능적 원거리 무선전력전송)

  • Park, Hong Soo;Hong, Ha Young;Hong, Sun K.
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.4
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    • pp.285-289
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    • 2018
  • In this paper, we demonstrate electromagnetic wave focusing and rectification based on time reversal as a smart method for far-field wireless power transfer. Time reversal in a complex propagation environment allows for transmission of high peak power pulses by focusing the electromagnetic waves selectively regardless of the receiver position. We demonstrate wave focusing and radio frequency (RF) to direct current (DC) rectification via numerical simulation of a complex propagation environment. The results reveal that time reversal can ensure peak power up to 12 dB greater compared to a narrowband continuous wave signal, thereby enhancing the rectified DC voltage with better efficiency.

A Study on $E_1$Transition in Si-Doped $Al_{0.32}Ga_{0.68}As$by Electroreflectance Measurement (Electroreflectance 측정에 의한 Si이 첨가된 $Al_{0.32}Ga_{0.68}As$에서의 $E_1$ 전이에 대한 연구)

  • 김동렬;손정식;김근형;이철욱;배인호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.9
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    • pp.687-692
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    • 1998
  • Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.

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