• 마이크로전자및패키징학회지
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• 제17권3호
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• pp.79-84
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• 2010

3차원 Si 칩 패키징 공정을 위한 비아 홀(TSV: Through-Si-Via) 및 Au 시드층 형성, 전기 도금을 이용한 Cu 충전기술과 범핑 공정 단순화에 관하여 연구하였다. 비아 홀 형성을 위하여 $SF_6$ 와 $C_4F_8$ 플라즈마를 교대로 사용하는 DRIE(Deep Reactive Ion Etching) 법을 사용하여 Si 웨이퍼를 에칭하였다. 1.92 ks동안 에칭하여 직경 40 ${\mu}m$, 깊이 80 ${\mu}m$의 비아 홀을 형성하였다. 비아 홀의 옆면에는 열습식 산화법으로 $SiO_2$ 절연층을, 스퍼터링 방법으로 Ti 접합층과 Au 시드층을 형성하였다. 펄스 DC 전기도금법에 의해 비아 홀에 Cu를 충전하였으며, 1000 mA/$dm^2$ 의 정펄스 전류에서 5 s 동안, 190 mA/$dm^2$의 역펄스 조건에서 25 s 동안 인가하는 조건으로 총 57.6 ks 동안 전기도금하였다. Si 다이 상의 Cu plugs 위에 리소그라피 공정 없이 전기도금을 실시하여 Sn 범프를 형성할 수 있었으며, 심각한 결함이 없는 범프를 성공적으로 제조할 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.84-93
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• 2001

An electromagnetic micro x-y stage for probe-based data storage (PDS) has been fabricated. The x-y stage consists of a silicon body inside which planar copper coils are embedded, a glass substrate bonded to the silicon body, and eight permanent magnets. The dimensions of flexures and copper coils were determined to yield $100{\;}\mu\textrm{m}$ in x and y directions under 50 mA of supplied current and to have 440 Hz of natural frequency. For the application to PDS devices, electromagnetic stage should have flat top surface for the prevention of its interference with multi-probe array, and have coils with low resistance for low power consumption. In order to satisfy these design criteria, conducting planar copper coils have been electroplated within silicon trenches which have high aspect ratio ($5{\;}\mu\textrm{m}$in width and $30{\;}\mu\textrm{m}$in depth). Silicon flexures with a height of $250{\;}\mu\textrm{m}$ were fabricated by using inductively coupled plasma reactive ion etching (ICP-RIE). The characteristics of a fabricated electromagnetic stage were measured by using laser doppler vibrometer (LDV) and dynamic signal analyzer (DSA). The DC gain was $0.16{\;}\mu\textrm{m}/mA$ and the maximum displacement was $42{\;}\mu\textrm{m}$ at a current of 180 mA. The measured natural frequency of the lowest mode was 325 Hz. Compared with the designed values, the lower natural frequency and DC gain of the fabricated device are due to the reverse-tapered ICP-RIE process and the incomplete assembly of the upper-sided permanent magnets for LDV measurements.

• 한국자기학회지
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• 제8권4호
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• pp.241-248
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• 1998

본 연구에서는 micro magnetic device의 제작과 특성 분석을 위하여 고주파수 대역에서 사용가능한 자성체의 개발과 meander형 마이크로 코일의 가공 기술 확립에 그 목적을 두었다. 자성체로서는 DC magnetron reactive sputtering system에 의해 제조된 초 미세결정구조를 갖는 FeTaC, FeTaN막을 사용하였으며, 그 자기적 특성은 다음과 같다. Bs:13~17kG, Hc:0.1~0.2Oe, $\mu$':2000~4000. 전기 도금법에 의해 제작된 Cu코일은 2$\mu$$\Omega$-cm의 비저항을 나타내었으며, 공심형 5turn 언덕터의 경우에는 50nH의 인덕턴스와 700MHz의 공진 주파수 그리고 200MHz에서 30의 성능 지수를 보였다. 또한 meandergudxo의 폐자로 인덕터에서 인덕턴스는 150nH, 공진 주파수는 100MHz, 그리고 성능지수는 10~30 MHz에서 4의 값을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.172-176
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• 2002

This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structured solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20um width and 3um thickness is electroplated on Cr(300${\AA}$)/Au(1500${\AA}$) films for the pick-up(42turn) and the excitation(24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3 $\mu\textrm{m}$ is obtained under 2000Gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ∼1,100 and coercive field of -0.1Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150V/T at the excitation frequency of 2MHz and the excitation voltage of 4.4Vp-p. The power consumption is estimated to be 50mW.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권9호
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• pp.418-423
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• 2003

This paper describes an electronic compass using micromachined X- and Y-axis micro fluxgate sensors which were perpendicularly aligned each other to measure X- and Y-axis magnetic fields respectively. The fluxgate sensor was composed of rectangular-ring shaped magnetic core and solenoid excitation(49 turns) and pick-up(46 turns) coils. Excitation and pick-up coil patterns which were formed opposite to each other wound the magnetic core alternatively to improve the sensitivity and to excite the magnetic core in an optimal condition with reduced excitation current. The magnetic core has DC effective permeability of ~1000 and coercive field of ~0.1 Oe. The magnetic core is easily saturated due to the low coercive field and closed magnetic path for the excitation field. To decrease the difference of induced second harmonic voltages from X- and Y-axis, excitation condition of 2.8 $V_{P-P}$ and 1.2 MHz square wave was selected. Excellent linear response over the range of -100 $\mu$T to +100 $\mu$T was obtained with 210 V/T sensitivity. The size of each micro fluxgate sensor excluding pad region was about 2.6${\times}$1.7 $mm^2$ and the power consumption was estimated to be 14 mW.W.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.120-124
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• 2003

This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structure solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20${\mu}$m width and 3${\mu}$m thickness is electroplated on Cr (300${\AA}$) / Au (1500${\AA}$) films for the pick-up (42turn) and the excitation (24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3${\mu}$m is obtained under 2000 gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ~1,100 and coercive field of ~0.1 Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150 V/T at the excitation frequency of 2 MHz and the excitation voltage of 4.4 V$\_$p p/. The power consumption is estimated to be 50mW.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.259-267
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• 2002

We present a novel 3D fabrication method with single X-ray process utilizing an X-ray mask in which a micro-actuator is integrated. An X-ray absorber is electroplated on the shuttle mass driven by the integrated micro-actuator during deep X-ray exposures. 3D microstructures are revealed by development kinetics and modulated in-depth dose distribution in resist, usually PMMA. Fabrication of X-ray masks with integrated electrothermal xy-stage and electrostatic actuator is presented along with discussions on PMMA development characteristics. Both devices use $20-\mu\textrm{m}$-thick overhanging single crystal Si as a structural material and fabricated using deep reactive ion etching of silicon-on-insulator wafer, phosphorous diffusion, gold electroplating, and bulk micromachining process. In electrostatic devices, $10-\mu\textrm{m}-thick$ gold absorber on $1mm{\times}1mm$ Si shuttle mass is supported by $10-\mu\textrm{m}-wide$, 1-mm-long suspension beams and oscillated by comb electrodes during X-ray exposures. In electrothermal devices, gold absorber on 1.42 mm diameter shuttle mass is oscillated in x and y directions sequentially by thermal expansion caused by joule heating of the corresponding bent beam actuators. The fundamental frequency and amplitude of the electrostatic devices are around 3.6 kHz and $20\mu\textrm{m}$, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Displacements in x and y directions of the electrothermal devices are both around $20{\;}\mu\textrm{m}$at 742 mW input power. S-shaped and conical shaped PMMA microstructures are demonstrated through X-ray experiments with the fabricated devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.144-144
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• 1999

최근 국내 반도체 기술의 비약적인 발전으로 전자 기기 전반에 소형화, 고주파화, 고기능화 등이 진행되는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기 신호를 변조.증폭시키는데 반해, 반도체 소자등에 전원을 공급하거나 회로 전체를 운용하는 전기신호를 변조.증폭시키는 인덕터, 트랜스 포머와 같은 수동 자기 소자는 아직도 3차원 벌크 형태로 사용되고 있다. 일본을 중심으로 각국에서는 자기 소자의 박막.소형화에 대한 다각도의 연구가 진행되었으나 국내서는 아직 미미한 실정이다. 따라서 고집적 전원 공급 장치나 지능 센서 등에 반도체와 자기 소자의 사용 주파수 대역과 크기가 통합된 반도체-자성체 IC(semiconductor-magnetic integrated circuit)의 필요성이 절실히 요구되고 있다. 현재 사용중인 벌크형 인덕터나, 트랜스 포머의 경우 10NHz이상의 고주파 대역에는 응용되지 못하고 있다. 이는 적용된 자성체가 페라이트(ferrite)로서 초투자율은 크지만 고주파대역에서의 공진 현상에 의해 저투자율을 나타내고, 포화 자속밀도가 낮기 때문이다. 이러한 페라이트 자성체의 대체품으로 주목받고 있는 것이 Fe, Co계 고비저항 자성마이다. 그러나 Co는 낮은 포화자속밀도를 나타내기 때문에 이러한 조건을 충족시키는 자성막으로 Fe계 미세 결정막을 사용하였다. 본 연구에서는 선택적 전기 도금법(selective electroplating method)과 LIGA like process를 이용하여 공시형 인덕터(air core inductor)의 라이브러리(library)를 구축한 뒤, 고주파 대역에서의 우수한 연자기 특성을 가지는 Ti/FeTaN막을 적용한 자기 박막 인덕터(magnetic thin film inductor)를 제작하여 비교.분석하였다. 제조된 인덕터의 특성 추정은 impedence analyzer를 이용하여 주파수에 따른 저항(resistance), 인덕턴스(inductance)를 측정, 계산한 성능지수(quality factor)로서 인덕터의 성능을 평가하였다. 제조된 박막 인덕터의 코일 형상은 5턴의 double rectangular spiral 구조였으며, 적용된 자성막의 유효 투자율9effective permeability)은 1500, 자성막, 절연막 그리고 코일의 두께는 각각 2$\mu\textrm{m}$, 1$\mu\textrm{m}$, 20$\mu\textrm{m}$이며 코일의 폭은 100$\mu\textrm{m}$, 코일간의 간격은 100$\mu\textrm{m}$였다. 제조된 박막 인덕터는 5MHz에서 1.0$\mu$H의 인덕턴스를 나타내었으며 dc current dervability는 100mA까지 유지되었다.

• 마이크로전자및패키징학회지
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• 제15권4호
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• pp.1-7
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• 2008

본 실험에서는 두가지 리플로 시스템에 따라 솔더 범프 내에 생성되는 금속간 화합물의 성장거동에 대하여 연구하였다. 산화막이 증착된 Si 기판 위에 직류 마그네트론 스퍼터링을 이용하여 Ti(50 nm), Cu($1{\mu}m$), Au(50 nm), Ti(50 nm)의 박막을 형성한 후, 전해 도금을 이용하여 $5{\mu}m$두께의 Cu 범프와 $20{\mu}m$ 두께의 Sn 범프를 형성하였다. 급속열처리장치(RTA)와 일반 리플로를 이용하여 전해 도금으로 형성된 Sn($20{\mu}m$)/Cu($5{\mu}m$) 범프를 동일한 온도에서 각각 리플로 공정을 진행한 결과, 급속열처리장치를 이용하여 리플로를 할 때, 플럭스를 사용하지 않고 범프로 형성할 수 있었으며, 솔더 계면에 형성된 금속간 화합물이 일반 리플로의 경우보다 더 얇게 형성되었다.