• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.95-96
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• 2006

ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems.

• 한국과학예술포럼
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• 제20권
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• pp.421-428
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• 2015

전기/하이브리드 자동차, 도금용 정루기 등에 들어가는 전력변환장치는 SCR, MOSFET, IGBT와 같은 스위칭 소자가 필수적으로 사용되며 이를 구동하기 위해서는 Gate Driver가 역시 필수적으로 사용된다. 본 논문에서는 대용량 전력변환장치에 사용되는 스위칭소자 SCR/IGBT를 구동하는데 필요한 Gate Driver를 제안한다. 제안된 Gate Driver는 4개의 BJT를 이용한 H-Bridge를 포함하며, 이는 입력된 DC 전력을 AC로 변환하여 Transformer를 통하여 Isolate 된 전원을 생성한다. 또한 Gate 제어 신호는 입력 전원과 Isolated된 전원이 연결된 Photo Coupler를 통해 Isolate된 제어 신호로 변환하여 실제 SCR/IGBT를 구동한다. 본 논문에서는 Simulation을 통해서 설계된 555 Timer를 통한 H-Bridge 동작을 검증하며 시제품을 제작하여 27V 50,000A 급의 도금용 정류기를 구동시켜 파형을 확인함으로써 제안된 Gate Driver의 타당성을 검증한다.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.123-127
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• 2009

In order to get more higher integration density of devices, it is getting to be used more and more micro via interconnection lines for interconnecting layers or devices. However, it is very important to enhance the electrical characteristic by reducing the electrical resistivity of micro via interconnection line because it affects the reliability of packaging. In this paper, Micro vias were patterned with a diameter from 10 to 100 um by increasing the step of 10 um and 100 um height and were fabricated by micromachining technology to investigate the electrical characteristic of micro via interconnection lines. These micro vias were filled with copper by electroplating process with appling pulse current mode. And the electrical characteristics of micro via interconnection lines were measured. The measured value of electrical resistivity shows with a range from 20 to $26\;m{\Omega}$. This value from micro via interconnection lines fabricated by pulse current mode electroplating process shows better result than the resistivity from than micro via interconnection lines fabricated by DC mode ($31\;m{\Omega}$).

• 한국표면공학회지
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• 제36권3호
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• pp.242-250
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• 2003

Electrodeposition of Ni was carried out on copper substrate from Ni Sulfamate bath by DC and high frequency pulse current. During the electroplating, bath temperature was steady $60^{\circ}C$ , agitation was applied. Morphology and surface roughness of electrodeposits was investigated with the AFM. Crystalline structure of electrodeposits was investigated with XRD. Also, surface electric resistivity was investigated with 4-point probe. The result of crystalline structure by X-ray diffractometer, in the case of DC, <200> direction was dominant growing direction. But in the case of PC, the ratio of <200> direction vs. other direction decreased. As the pulse frequency increased, the enhanced properties of deposits were shown. With increasing frequency, the degree of surface properties increased DC more than that of PC, eg surface morphology, roughness and the degree of compactness of grains. With increasing duty cycle, the surface properties such as the degree of the morphology, roughness and electroconductivity was deteriorated.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 추계학술대회 논문집
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• pp.249-249
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• 2015

Silver films have been of considerable interest for years due to their better performance relative to other metal films for engineering applications. A series of multi-layer silver coatings with different thickness (i.e. 0.3 um to 1.5 um) were prepared on Aluminium substrate containing copper undercoat by direct current (DC) magnetron sputtering method. For the comparative purpose, similar thickness silver coatings were prepared by electrolytic deposition method. Microstructural, morphological, and mechanical characteristics of the silver coatings were evaluated by means of scanning electron microscope (SEM), X-ray diffraction (XRD), Surface roughness test, microhardness test and nano-scratch test. From the results, it has been elucidated that the silver films prepared by DC magnetron sputtering method has superior properties in comparison to the wet coating method. On the other hand, DC magnetron sputtering method is relatively easier, faster, eco-friendly and more productive than the electrolytic deposition method that uses several kinds of hazardous chemicals for bath formulation. Therefore, a New Work Item Proposal (NWIP) for the test methods standardization of DC magnetron sputtered silver coatings has recently been proposed via KATS, Korea and a NP ballot is being progressed within a technical committee "ISO/TC107-metallic and other inorganic coating".

• 센서학회지
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• 제29권4호
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• pp.275-278
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• 2020

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (V_DS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (V_GS) = threshold voltage (V_T), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 춘계학술대회 논문집
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• pp.7-9
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• 2008

ITO thin film is generally fabricated by various. methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems

• 한국재료학회지
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• 제12권1호
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• pp.82-88
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• 2002

Chromium carbide films were deposited on high speed steels using a Cr_3C_2$ target by magnetron sputtering. Effects of the deposition parameters (power, Ar pressure and substrate temperature) on deposition rates and surface roughnesses of the films were investigated. The morphologies of those films were characterized by scanning electron microscopy and atomic force microscopy. The grain size of the samples deposited using dc-power is larger than that using equivalent rf-power. The hardness of the sample increases with increasing rf-power, whereas the elastic modulus nearly does not change with rf-power. The optimum sputter deposition conditions for chromium carbide on high speed steels in the corrosion resistance aspect were found to be the rf-power with small roughness.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3295-3297
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• 1999

This paper presents the fabrication of an electromagnetic micro actuator consisting of a Parylene diaphragm with a spiral copper coil and a permanent magnet. The copper coil is fabricated by electroplating and patterning. The frequency response of the actuator are obtained using a laser vibrometer. When the input voltage is 3 V, the DC deflection is 5 ${\mu}m$, and the resonance frequency is about 35 Hz. Also, the mechanical sensitivity of the actuator diaphragm is 69 ${\mu}m/V$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1357-1358
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• 2006

Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.