• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.414-418
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• 2012

In recent years, understanding the dynamics of DC distribution system has become critically important due mainly to the increasing needs for the interconnection of DC distributed generators and the (DC-based) electric vehicle (EV) charging systems. In this paper, the characteristics of the DC grid system connected to the compact proton exchange membrane fuel cell (PEMFC) has been studied. In particular, the voltage and current transient phenomena were measured by varying the load of the DC grid system. Also, the voltage and current ripple were measured at the different load conditions. Our experimental results clearly manifested that the study contributes to the establishment of fundamental method to characterize the small DC grid system including distributed generation.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.6
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• pp.558-565
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• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

• Progress in Superconductivity and Cryogenics
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• v.17 no.1
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• pp.44-47
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• 2015

High voltage superconducting apparatuses have been developed presently around the world under AC and DC sources. In order to improve electrical reliability of superconducting apparatuses with AC and DC networks, a study on the DC as well as the AC electrical breakdown characteristics of cryogenic insulations should be conducted for developing a high voltage superconducting apparatus. Recently, a sub-cooled liquid nitrogen cooling system is known to be promising method for developing a high voltage superconducting apparatus. A sub-cooled liquid nitrogen cooling system uses gaseous nitrogen to control the pressure and enhance the dielectric characteristics. However, the dielectric characteristics of gaseous nitrogen are not enough to satisfy the grade of insulation for a high voltage superconducting apparatus. In this case, the application of solid insulating barriers is regarded as an effective method to reinforce the dielectric characteristics of a high voltage superconducting apparatus. In this paper, it is dealt with a barrier effect on the DC and AC dielectric characteristics of gaseous nitrogen with respect to the position and number of solid insulating barriers. As results, the DC and AC electrical breakdown characteristics by various barrier effects is verified.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.11-17
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• 2003

DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.65-68
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• 2000

Polyethylene, has long history and is widely used, was researched due to good electrical properties by many authors. But PE under stress has the critical defects of space charge accumulation and tree growth, so various methods such as catalyst, additives and blend to improve these problems have been execute, of which we selected blending method. As in our previous papers we investigated electrical conduction, dielectric and AC dielectric breakdown characteristics, we did DC dielectric breakdown characteristics in this paper. We selected pure LLDPE, pure EVA and LLDPE films mixed with EVA as specimens, which were mixed with the weight percentages of 50, 60, 70 and 80[wt%] to be thin film. DC applying voltage speed was 500[V/sec]. The relation between dielectric breakdown characteristics and the variations of super structure due to mixing was investigated, and especially trap level at amorphous region, threshold energy increment of conductive electron at free volume were considered.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2150_2151
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• 2009

Solar, as an ideal renewable energy, has inexhaustible, clean and safe characteristics. However, solar energy is an extreme intermittent and inconstant energy source. In order to improve the photovoltaic system efficiency and utilize the solar energy more fully, and the DC current vary with module temperature, it is necessary to study the characteristics of photovoltaic I-V according to the external factors. This paper presents the analysis of characteristics of photovoltaic I-V according to the module temperature. The results show that it seems that when the module temperature increases, the DC current increases. But actually, because when the irradiation increases, the DC current increases, the result of the relationship between DC current and the module temperature of solar cell will be effects by the increasing irradiation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.68-71
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• 2006

A class-E power amplifier is designed using 0.25$\mu$m standard CNMOS technology at 900MHz and the reliability characteristics are studied with the load network. The reliability characteristics is improved when a finite DC-feed inductor is used instead of RF choke. At the one you halt, the PAE(Power Added Efficiency) decreases from 58.0$\%$ to 35.7$\%$ and output power decreases from 120mW to 74mW in power amplifier using RF choke. However, when a finite DC-feed inductor is used with load the PAE decreases from 58.5$\%$ to 54.8$\%$ and output power decreases from 121mW to 112mW. From the simulated results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to rower amplifier using RF choke inductor.

• Journal of Power Electronics
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• v.8 no.4
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• pp.309-316
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• 2008

In this paper, new topology is proposed that can dramatically reduce the converter power rating and increase the efficiency of total PV system. Since the output voltage of PV module has very wide voltage range, in general, the DC/DC converter is used to get constant high DC voltage. According to analysis of PV characteristics, in proposed topology, only 20% power of total PV system power is needed for DC/DC converter. DC/DC converter used in proposed topology has flat efficiency curve at all load range and very high efficiency characteristics. The total system efficiency is the product of that of converter and that of inverter. In proposed topology, because the converter efficiency curve is flat all load range, the total system efficiency at the low power range is dramatically improved. The proposed topology is implemented for 200kW PCS system. This system has only three DC/DC converters with 20kW power rating each other. It is only one-third of total system power. The experiment results show that the proposed topology has good performance.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.7 no.3
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• pp.65-78
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• 1997

Due to the cryptographic functional structure including the S-box, DES is not robust against differential cryptoanalysis (DC). Therefore, to increase the security against DC, we have to redesign the S-box or modify DES algorithm to decrease the probability for the N-1 round characteristics. However, it has been shown that a new design for the S-box is not secure enough. Rather, if will be more reliable to devise a modified cryptographic algorithm. In this paper, we propose a modified DES algorithm to decrease the probability of N-1 round characteristics to be robust against DC. According to our comparative study, the proposed algorithm is shown to be more robust against the DC than DES.

• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.52-56
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• 2007

A high temperature superconducting (HTS) DC cable is ideal for transmitting large blocks of electrical power over a long distance. However, it must be designed to operate reliably within the constraints of the electrical systems. Therefore, a study of the electrical insulation is important to develop a HTS DC cable because it is operated in a cryogenic high voltage environment. This paper discusses the dielectric constructions of the cable and summarizes the experimental results on the DC and impulse dielectric characteristics of the insulation material. in sheet form and mini-model cable configuration. This shows how to design such insulation to be operated reliably. These studies are essential for the insulation design of a HTS DC cable operated in cryogenic environment.