• Korean Journal of Environmental Biology
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• v.37 no.4
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• pp.447-466
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• 2019

The orchard flora where perennial fruit trees are grown may be different than in arable fields where annual crops are grown. The study focused on the floristic composition and characteristics of orchards in South Korea. The flora surveys were conducted in 36 areas in nine provinces at two times (May-June and August-September) in 2014. The results showed that the vascular orchard plants in South Korea included 466 taxa, which contained 91 families, 278 genera, 420 species, two subspecies, 39 varieties, four forms, and one hybrid. Among the 91 families, Compositae was the most diverse in species (66 taxa), followed by Gramineae (51 taxa), Leguminosae (28 taxa), Cyperaceae (18 taxa), Polygonaceae (17 taxa), Cruciferae (16 taxa), and Labiatae (14 taxa). Based on the occurrence frequency of each species, Digitaria ciliaris (Retz.) Koel. (100%) was the highest, followed by Acalypha australis L. (94.4%), Commelina communis L. (94.4%), Persicaria longiseta(Bruijn) Kitag.(91.7), Capsella bursa-pastoris(L.) L. W. Medicus(91.7%), Erigeron annuus (L.) Pers. (91.7%), Mazus pumilus (Burm. f.) Steenis (86.1%), Artemisia princeps Pamp. (86.1%), Cyperus microiria Steud. (86.1%), Stellaria aquatica (L.) Scop. (83.3%), Stellaria media(L.) Vill.(83.3%), and Echinochloa crus-galli (L.) P. Beauv.(83.3%). The biological type of orchards in South Korea was determined to be Th-₅-D₄-e type. Rare plants were found six taxa: Cinnamomum camphora (L.) J. Presl, Aristolochia contorta Bunge, Melothria japonica (Thunb.) Maxim., Ardisia crenata Sims, Gnaphalium hypoleucum DC., and Aster koraiensis Nakai. Eighty-five taxa contained naturalized plants composed of 23 families, 58 genera, 80 species, four varieties, and one form. The urbanization and naturalization indices were 26.3% and 18.2%, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• Korean Journal of Food Science and Technology
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• v.47 no.3
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• pp.293-298
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• 2015

This study aimed at characterizing the rheological properties and molecular weight of tara gum fractionated with ammonium sulfate. Tara gum was separated into six fractions (F1-F6) at different concentrations of ammonium sulfate, ranging from 12.21 to 28.67% (w/w). The yield of the tara gum fractions ranged between 4.98 and 17.47%, and their intrinsic viscosity ranged from 9.38 to 12.44 dL/g. The highest values of Huggins coefficient (k') and viscosity-molecular mass were observed in fraction F3. The shear viscosity of the tara gum fractions was measured by a cone-plate viscometer, clearly showing shear thinning behavior. Size-exclusion chromatography results showed that the molecular weight ranged between 635.42 and 776.71 kg/mol, and the F3 fraction exhibited higher values of molecular weight.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.39 no.4
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• pp.269-275
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• 2003

In this paper, We examined auditory threshold and critical ratio of amberjack seriola dumerili, in the Jeju Island coastal waters, to find out hearing ability of the fish. The auditory threshold level, critical ratio and hearing index of amberjack were determinded by conditioning method using a sound coupled with electric shock in the condition of ambient noise or white noise in an experimental water tank. The audio-signals of pure tone and electric shock were from 80 HZ to 800 Hz and DC 7 V, respectively. Values for the critical ratios were calculated in terms of the masked thresholds using the noise projected to stable spectrum levels at all measurement frequencies of background noise. Masking noises were in the spectrum level range of 65 dB∼75 dB $(re 1{\mu}Pa\sqrt{Hz})$. The auditory thresholds of amberjack within the test the frequencies were most sensitive at 300HZ as 94.5 dB. The critical ratios of fishes ranged from 36.4 to 52.8 dB. The noise spectrum level that started masking was about 58∼72 dB within frequencies.

• Korean Chemical Engineering Research
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• v.46 no.6
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• pp.1135-1141
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• 2008

The $La_{1-x}(Ca\;or\;Sr)xCrO_3$(x=0 and 0.25) interconnect materials for high temperature electrolysis of steam were investigated in views of sinterability and electrical conductivity. $LaCrO_3$, $La_{0.75}Ca_{0.25}CrO_3$ (LCC), and $La_{0.75}Sr_{0.25}CrO_3$ (LSC) powders were synthesized by coprecipitation method. Crystal structure was confirmed by X-ray diffraction (XRD). The sintering characteristics were analyzed by relative density and scanning electron microscopy. The electrical conductivity was measured by a DC four probe method. From the analyses of relative densities, it was found that the doped $LaCrO_3$ showed better sinterability than $LaCrO_3$ and the those sinterability increased with decrease of those particle sizes. The XRD results at different sintering temperatures for LCC and LSC revealed that the sinterability is closely related to the second phase transformation, that is, the second phase melting above $1,300^{\circ}C$ for LCC and $1,400^{\circ}C$ for LSC significantly promotes the sinterability. In case of electrical conductivities of LCC and LSC, which had a similar relative density, LCC showed better electrical conductivity than LSC.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.157-157
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• 2016

최근 많은 산업의 발전으로 인해 환경오염을 유발시키는 폐수가 다량으로 배출되고 있으며, 이러한 폐수 속에는 유기용매, 고분자 물질 및 각종 염 등의 난분해성 물질들이 다량으로 함유되어 있다. 이런 물질들을 분해시키기 위해 물리적, 생물학적 수처리 방법이 많이 이용되고 있지만 이 방법들은 각각 운전비용과 처리비용이 고가인 단점이 있다. 따라서 비용과 효율 측면에서 효과적인 폐수처리를 위해서 전기화학적 폐수처리 방법이 많이 사용되고 있다. 물리적, 생물학적 처리 방법에 비해 비용이 적게 들고, 처리 후 잔류물이 남지 않으며. 독성을 띄는 산화제의 첨가 없이도 높은 폐수처리 능력을 보이기 때문에 친환경적이므로, 전기화학적 폐수산화 처리에 사용되는 불용성 전극에 대한 연구가 많이 진행되어져 오고 있다. 그 중 BDD(Boron-doped diamond) 전극은 표면에서 강력한 산화제인 수산화 라디칼의 높은 발생량으로 인해 뛰어난 폐수처리 능력을 보이므로 불용성 전극 분야에서 활발한 연구가 진행 중이다. 그러나 기존에 BDD 전극의 기판 모재로 이용되던 Si, W, Pb등은 모두 기계적 강도. 폐수처리 능력 및 독성 문제로 인해 한계가 있었고, 특히 Nb기판 위에 형성시킨 BDD 전극은 뛰어난 폐수처리 능력에도 불구하고 비싼 모재 원가로 인해 상용화가 힘든 실정이다. 이런 문제점을 해결하기 위해 높은 기계적 강도와 전기화학적 안정성을 가진 Ti 기판을 사용한 BDD 전극에 대한 연구가 보고되고 있다. 그러나 BDD와 Ti 간의 lattice mismatch, BDD층 형성을 위한 고온 공정 시 탄소의 확산으로 인한 기판 표면에서의 TiC층 형성으로 인해 접착력이 감소하여 박리가 생기는 문제점이 있다. BDD와 Ti의 접착력을 향상시키기 위해 융점이 높고, 전기전도성이 우수한 TiN을 diffusion barrier layer로 삽입하면 탄소 확산에 의한 TiC층의 생성을 억제하여, 내부응력에 기인한 접착력 감소를 방지할 수 있다. 또 하나의 방법으로 Ti 기판의 전처리를 통해 BDD층의 접착력을 향상 시킬 수 있다. Sanding과 etching을 통해 기판 표면의 물리, 화학적인 표면조도를 부여하고, seeding을 통해 diamond 결정 성장에 도움을 주는 seed 입자를 분포시킴으로써, 중간층과 BDD층의 접착력을 향상시키고, BDD 결정핵 성장을 촉진시켜 고품질의 BDD박막 증착이 가능하다. 본 연구에서는 기존 Si, Nb 등의 기판 모재를 Ti로 대체함으로써 제조원가를 절감시키고, TiN 중간층을 삽입하여 접착력을 향상시킴으로써 기존의 BDD 전극과 동등한 수준의 물성 및 수처리 특성을 가진 BDD전극 제작을 목표로 하였다. $25{\times}25mm$의 Ti 기판위에 TiN 중간층을 DC magnetron sputtering을 이용하여 증착 후, BDD 전극 층을 HFCVD로 증착하였다. 전처리를 진행한 기판과 중간층 및 BDD층의 미세구조를 XRD로 분석하였고, 표면 형상을 SEM으로 확인하였다. BDD전극의 접착력 분석을 통해 TiN 중간층의 최적 조성을 도출하고, 최종적으로 BDD/TiN/Ti 전극의 CV특성과 가폐수의 COD분해능력 및 축산폐수, 선박평형수 등의 실제 폐수 처리 능력을 BDD/Si, BDD/Nb 전극과 비교 검토할 것이다.

• Journal of the Korean Chemical Society
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• v.50 no.1
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• pp.14-22
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• 2006

the basic model of chemical reactor using glow discharge, we used cathode discharge cell with vacant cavity in the middle. Currently glow discharge is widely studied as a radiation source or atomization device in atomic spectroscopy and remarkable technological achievements are made through the graft with other analysis devices such as microanalysis and steel analysis.1 Additionally, as the characteristics of basic glow discharge and radiation have been reviewed many times, those results could be used in this experiment.2-3 In 1993, an article regarding the treatment of poisonous gas in the air using low temperature plasma was published. According to this article, if DC Glow Discharge is used under continuous atmospheric flow, poisonous gases such as SO2 and NO can be removed.4 Based on those findings, we designed highly efficient reactor where stable air plasma is composed and all air flow pass the negative glow area passing through the tube. It was observed that the cathode tube type glow discharge developed in this study would be economical, easy to use and could be used as radiation source as well.

• Journal of Navigation and Port Research
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• v.27 no.2
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• pp.209-215
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• 2003

In this paper. We tested and fabricated the error amplifier for the 15 Watt linear power amplifier for the IMT-2000 baseband station. The error amplifier was comprised of subtractor for detecting intermodulation distortion, variable attenuator for control amplitude, variable phase shifter for control phase, low power amplifier and high power amplifier. This component was designed on the RO4350 substrate and integrated the aluminum case with active biasing circuit. For suppression of spurious, the through capacitance was used. The characteristics of error amplifier measured up to 45 dB gain, $\pm$0.66 dB gain flatness and -15 dB input return loss. Results of application to the 15 Watt feedforward Linear Power Amplifier, the error amplifier improved with 27 dB cancellation from 34 dBc to 61 dBc IM$_3$.

• Journal of Navigation and Port Research
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• v.27 no.1
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• pp.81-86
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• 2003

In the paper, the power amplifier using active biasing for LDMOS MRF-21060 is designed and fabricated. Driving amplifier using AH1 and parallel power amplifier AH11 is made to drive the LDMOS MRF 21060 power amplifier. The variation of current consumption in the fabricated 5 Watt power amplifier has an excellent characteristics of less than 0.1A, whereas passive biasing circuit dissipate more than 0.5A. The implemented power amplifier has the gain over 12 dB, the gain flatness of less than $\pm$0.09dB and input and output return loss of less than -19dB over the frequency range 2.11~2.17GHz. The DC operation point of this power amplifier at temperature variation from $0^{\circ}C$ to $60^{\circ}C$ is fixed by active circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.