• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.6 s.360
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• pp.64-70
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• 2007

This paper presents a novel unified DC offset cancellation and I/Q regeneration for five-port junction based direct receivers. It utilizes the symmetry characteristics of the single-frequency continuous-wave (CW) signal, making it possible that the proposed method can be used regardless of carrier phase offset. The proposed method eliminates the additional DC offset cancellation and reduces the I/Q regeneration parameter estimation time. Since the proposed method employs a single-frequency CW signal independent of the modulation scheme, five-port junction based direct receivers can be used for the demodulation of orthogonal frequency-division multiplexing and continuous phase modulation as well as phase shift-keying.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.497-500
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• 1999

This paper reports on the fabrication and characteristics of recessed gate GaN MESFETs fabricated using a photoelectrochemical wet etching method. The unique etching process utilizes photo-resistive mask and KOH based etchant. GaN MESFETs with successfully recessed gate structure was characterized in terms of dc and RF performance. The fabricated GaN MESFET exhibits a current saturation at $V_{DS}$ = 4 V and a pinch-off at $V_{GS}$ =-3V The peak drain current of the device is about 230mA/mm at 300 K and the value is remained almost same for 500K operation. The $f_{T}$ and $f_{max}$ from the device are 6.357Hz and 10.25 GHz, respectively.y.y.

• Journal of Advanced Navigation Technology
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• v.14 no.5
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• pp.655-660
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• 2010

This paper examines RF-to-DC conversion efficiency of rectifying circuit for wireless power transmission. The rectifying circuit consists of low pass filter, diode circuits and dc pass filter. All these components may be effect on the conversion efficiency. Using the simulation, we study these components how to effect on the conversion efficiency. On the basis of the simulation results, the 912MHz rectifying circuit with 50% efficiency at low input power such as 0dBm is fabricated and its characteristics are measured.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.633-636
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• 1998

In this study, power AlGaAs/InGaAs/GaAs PM-HEMT's for mm wave's were fabricated using Electron beam lithography and air-bridge techniques, and so on. DC and AC characteristics of the fabricated power PM-HEMTs were measured under the various bias conditions. For example, DC and RF characteristics such as S21 gain of 3.6 dB at 35 ㎓, current gain cut-off frequencies of 45 ㎓ and maximum oscillation frequencies of 100 ㎓ were carefully analyzed for design methodology of sub-mm wave power devices.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.637-641
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• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.180-182
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• 1994

In an electron storage ring of Pohang Light Source (PLS), electrons lose their energy in every turn by the synchronous radiation. A high power RF amplifier is employed to compensate the electron energy that is lost by the synchronous radiation. The specification of RF amplifier is an continuous output power of 60 kW at 500.082 MHz operating frequency. The power is supplied to RF cavities in the storage ring tunnel. Total number of amplifier system currently required is three. Tile total number will be increased upto five as the operating condition of storage ring is upgraded. The RF amplifier is mainly consisted of a high voltage DC power supply, an intermediate RF power amplifier (IPA), and a klystron tube. In this article, the design of RF amplifier system and characteristics of the klystron tube will be discussed.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.49-53
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• 2001

Vortical etching experiments of ($SrBi_2Ta_2O_9$)/Si thin films have been performed by using the inductively coupled plasma reactive ion etching (ICP-ME) apparatus. The purposes of these experiments are to get the effective area of vertical surface. Because this technology is very important to get good qualities of ferroelectric gate structure, capacitor and the minimum parasitic effects related to the excellent performances of the FRAM (Ferroelectric Random Access Memory) device. The reacting gases were Ar and $Cl_2$gases, and various $Ar/C1_2$flow ratios were used. The etching experiments were carried out at various RF powers such as 700, 700, 500W and at various DC powers such as 200, 150, 100, 50W, respectively. The maximum etch rate of $SrBi_2Ta_2O_9$/Si thin films was 1050 A/min at the $Ar/C1_2$ gas ratio of 20/16, RF power of 700 W and DC power of 200 W. From the SEM (scanning electron microscopy) image of the SBT thin films, the wall angle was as good as about $82^{\circ}$.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1529-1530
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• 2006

현재 한빛 플라즈마에서 운영되고 있는 전자기 진단장치는 정전탐침, 자장탐침 및 반자성루프 둥이 있다. 정전탐침은 고정식, 이동식, 고속주사방식 세 종류의 진단장치가 개발되어 실험에 이용되어 왔는데 비교적 쉽게 많은 종류의 probe와 다양한 probe tip을 구성할 수 있기 때문에 한빛 장치에서 axial 및 azimuthal 방향으로 전자 온도/밀도 및 그들의 분포를 측정하고 있다. 단일탐침에서 사용되던 RF 보상기술을 삼중탐침에서도 적용시켜 RF 보상 삼중탐침을 개발하였다. 기존의 삼중탐침의 경우에는 DC에 대해서는 높은 임피던스로 외부에 부유되어 있지만 RF의 경우에는 외부와 부유되지 않고 낮음 임피던스로 연결되어있는 경우가 많았다. 하지만 RF보상 삼중탐침의 경우에는 RF의 경우에도 충분히 큰 임피던스로 부유되어 있다. 따라서 보다 왜곡되지 않은 측정을 할 수 있다. RF보상 삼중탐침을 이용하여 한빛 Mirror 플라즈마에서 axial 방향으로 Plasma 변수들의 변화를 관찰하면서 기존의 탐침에서 볼 수 얼던 여러 특성을 관찰할 수 있었다.