• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.50-50
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• 2009

In this paper, the plasma doping is performed on p-type wafers using $PH_3$ gas(10 %) diluted with He gas(90 %). The wafer is placed in the plasma generated with 200 W and a negative DC bias (1 kV) is applied to the substrate for 60 sec under no substrate heating. the flow rate of the diluted $PH_3$ gas and the process pressure are 100 sccm and 10 mTorr, respectively. In order to diffuse and activate the dopant, annealing process such as rapid thermal annealing (RTA) is performed. RTA process is performed either in $N_2$, $O_2$ or $O_2+N_2$ ambient at $900{\sim}950^{\circ}C$ for 10 sec. The sheet resistance is measured using four point probe. The shallow n+/p doping profiles are investigated using secondary ion mass spectromtry (SIMS). The analysis of crystalline defect is also done using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.7-11
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• 2002

In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.108-109
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• 2009

In this study we investigated the characteristics of GZOB thin film on $O_2$ plasma treated Polycarbonate substrate using DC magnetron sputtering method. In our experiments results, GZOB thin film on $O_2$ plasma treated Polycarbonate substrate showed low resistivity than As-grown GZOB thin film, and visible transmission of 85% with a thickness 400 nm. Compared with As-Grown the electrical properties of GZOB were relatively improved by $O_2$ plasma treated substrate. From these results, we could confirm the suitable GZOB thin films for transparent electrode.

• 전기학회논문지
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• 제56권3호
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• pp.566-570
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• 2007

The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).

• 전기학회논문지
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• 제56권1호
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• pp.151-155
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• 2007

A compact discharge plasma system with a photocatalyst has been proposed and investigated experimentally for application to air conditioners. It was found that there was intense ultra violet radiation with high energy of 3.2 eV from the corona discharge due to the DC-biased pulse voltage applied on a wire. An electrophotochemical reaction took place apparently on the surfaces of the photocatalyst of $TiO_2$ irradiated ultra violet front the discharge plasma in the proposed plasma system. The proposed discharge plasma system with the photocatalyst of $TiO_2$ showed very high removal efficiency of VOCs by tile additional electrophotochemical reactions on the photocatalyst. The proposed discharge plasma system also showed very high removal efficiency of particles such as smokes, suspended bacteria, and pollen and mite allergens by the electrostatic precipitation part. This type of corona discharge plasma system with a photocatalyst can be used as an effective means of removing both indoor pollutant gases and particles including suspended allergens.

• 조명전기설비학회논문지
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• 제20권1호
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• pp.19-26
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• 2006

용량결합고주파(ccrf)방전은 홀로우음극방전이나, 직류방전에 비해서 방전관의 구조가 간단하고 균질한 플라즈마를 발생시키는 장점을 가지고 있다. 본 논문에서는 ccrf-방전을 기체레이저의 여기에 적용하기 위한 목표를 가지고 방전시스템을 선계, 제작하여 연속운전의 균질한 방전을 실현하였다. 13.56[MHz]의 rf-전력을 방전 내부로 효율적으로 결합하기 위해서 내부직경 5[mm]의 레이저방전관에 특수하게 제작된 rf-전극을 사용하였다. 또한 방전관의 임피던스가 rf-발생기의 풀력저항 50[$\Omega$]에 정합을 이루는 임피던스 정합회로를 개발하였다.

• 조명전기설비학회논문지
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• 제27권6호
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• pp.31-38
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• 2013

A pulse driven atmospheric plasma jet controlled by external ballast capacitor is developed. Unlike the most commonly use DBD sources, the proposed device utilizes bare metal electrode. The discharge energy per pulse can precisely be determined by changing voltage and capacitance of the ballast capacitor. It is shown that the device can provide wide range of plasma, from stable glow mode to near arc state. Current-voltage waveforms, optical emission spectra and discharge images are investigated as a function of an injection energy. The OES shows that He and oxygen lines are increased as a function of the external ballast capacitor. Ozone and rotational temperature have similar tendency with a power consumption. The feeding gas is He and the applied DC voltage is from 400V to 800V when the gap distance is $500{\mu}m$.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.996-1002
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• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.947-949
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• 1998

In this paper, the NO was oxidized $NO_2$ by using the non-thermal plasma and NOx removal characteristics were measured by showering NaOH water-solution to $NO_2$. The NO oxidation increased in the order of DC, AC, and Pulse. NOx oxidation for two stage with applied voltage was better than that for one stage with applied voltage. NO oxidation didn't depend on applied voltage. While NO oxidation was going on, NOx removal efficiency was 20-25%, however, significantly depended on the injection method of air and $H_2O$ + air. When NaOH water-solution density of 20% was showered to flue gases, NOx removal efficiency increased to 64%.

• 한국재료학회지
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• 제12권6호
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• pp.447-451
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• 2002

Pulsed DC-plasma nitriding has been applied to form nitride layer having only a diffusion layer. The discharge current with the variation of discharge gases is proportional to the intensity of $N_2^+$ peak in optical emission spectroscopy during the plasma nitriding. The discharge current, microhardness in surface of substrate and depth of nitride layer increased with the ratio of $N_2\;to\;H_2$ gas in discharge gases. When the ratio of $N_2\;to\;H_2$ is lower than 60% in the discharge gases, high microhardness value of 1100Hv nitride layer which contains no compound layer has been formed.