• Journal of Hydrogen and New Energy
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• v.14 no.1
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• pp.8-16
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• 2003

$TiO_2$ thin films were deposited by DC reactive magnetron sputtering with variations in sputtering parameter such as Ar and $O_2$ flow rate, DC power, substrate temperature and magnetic field. Deposition rate, crystal structure, chemical bond of $TiO_2$ films on the deposition conditions were investigated by Alpha-step, X-ray Diffractometer(XRD), X-ray Photoelectron Spectroscopy(XPS). When the DC power was applied at 500watt, deposition rate of $TiO_2$ film was about 480A/min. $TiO_2$ films coated under the deposition condition of 15sccm Ar and 7~10sccm $O_2$ flow rate was only observed anatase phase. With increasing substrate temperature from RT to $300^{\circ}C$, crystal orientation of $TiO_2$ films variously became.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.196-203
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• 1995

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.

• Electrical & Electronic Materials
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• v.5 no.1
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• pp.8-13
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• 1992

일련의 Al/Tb-Fe-Co 다층박막 시편이 DC마그네트론 스퍼터링에 의해 제조되었다. 이 박막들은 (xA/yB)n의 형태이고 여기서 x와 y는 각각 Al 및 Tb-Fe-Co 박막의 두께를 나타내고 n은 각 박막의 수를 나타낸다. 각 박막의 두께는 2~40nm이다. Al과 Tb-Fe-Co박막의 두께변화에 따른 다층박막의 자기적 성질이 vibration sample magnetometry(VSM)에 의해 측정되었다. 이들 다층박막은 동일한 스퍼터링조건에서 제조되고 수평 자기적 이방성 특성을 보이고 있는 단층 Tb-Fe-Co박막을 기준시편으로 하여 자기적 성질이 비교되었다. 다층박막 시스템에서는 현저한 계면 또는 박막두께의 효과가 발견되었으며 이들 효과에 의해 단층박막의 수평자기체가 다층박막에서는 강한 수직자기체로 변화되는 것을 알 수 있고, 또한 Al과 Tb-Fe-Co합금 경계구역에 스퍼터링에 따른 약 2nm두께의 dead layer가 존재함이 입증 되었다.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.202-210
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• 2001

Spin dependent tunneling (SDT) junction devices of Ta/NiFe/Ta/NiFe/FeMn/NiFe/AlOx/CoFe/NiFe/Al with in-situ naturally oxidized Al barrier were fabricated using ion beam deposition and dc sputtering in UHV chamber of 10$^{-9}$ Torr. The maximum tunneling magnetoresistance (TMR) and the product resistance by junction (R$_{j}$ A) are 16-17% and 50-60 $\Omega$${\mu}{\textrm}{m}$$^2$, respectively. The values of TMR and (R$_{j}$ A) with field annealing were slightly increased. The TMR and (R$_{j}$ A) dependence versus the junction area size was observed. These results were explained by using sheet resistance effect of bottom electrode and spin channel effects.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.148-148
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• 2005

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.277-280
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• 2004

p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.376-382
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• 2000

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.52.1-52
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.72-73
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• 2002

No Abstract, See Full Text

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.42-43
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• 2001