• Korean Journal of Food Science and Technology
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• v.45 no.1
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• pp.104-110
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• 2013

This study assessed hazards at the harvest stage of strawberry farms which may cause risk to humans. A total of 216 samples were collected from 6 strawberry farms (soil culture farms: A, B, C; nutriculture farms: D, E, F) located in Western Gyeongnam. The collected samples were subjected for sanitary indicator bacteria (aerobic plate count, coliforms and Escherichia coli), major foodborne pathogens (E. coli O157:H7, Listeria monocytogenes, Salmonella spp., Staphylococcus aureus and Bacillus cereus), and fungi. The levels of APC and coliform in the soil culture farms were 1.0-6.9 and 0.4-4.6 log CFU/g (leaf, mL, hand or 100 $cm^2$), respectively. The samples obtained from the nutriculture farms were contaminated with the levels of 0.8-4.9, and 0.2-2.6 log CFU/g (leaf, mL, hand or 100 $cm^2$) of APC and coliform. However, E. coli was not detected in any samples. In major foodborne pathogens, S. aureus was detected at the level of ${\leq}$3.3 log CFU/hand in workers' hand samples and B. cereus was detected at the levels of 0.4-4.1 log CFU/g (hand or 100 $cm^2$) in soil, plants and workers' hygiene. L. monocytogenes, E. coli O157:H7 and Salmonella spp. were not detected. Fungi were detected at the levels of 1.0-5.2 and 0.2-4.4 log CFU/g (leaf, mL, hand or 100 $cm^2$) in soil culture and nutriculture farms, respectively.

• Korean journal of applied entomology
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• v.25 no.3 s.68
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• pp.169-173
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• 1986

Ginseng fields abolished by potato rot nematode (Ditylenchus destructor) (heavily infested with the nematode) were treated with selected nematicides after preplanting treatment with fumigants or non fumigant chemicals in the fall of 1982. Suppression of the nematode populations was noted in the fields fumigated by cylon (Cy) and treated with ethoprop (E) or triazophos (T). Also in these treatments, high percentages of shoot sprouting and low nematode damages were observed. In the fields fumigated by Cy, subsequent treatments with nonfumigant nematicides such as E, aldicarb (A), phenamiphos (Ph), oxamyl (O) and carbofuran (C) during cultivation had no effect on the significant decrease of the nematode, compared with Cy alone. No differences in shoot sprouting and symptom appearance were observed; however, survivalities of plants and root weights of 4-year old ginseng were high in A and E or E following preplanting treatment with E. Correlation coefficients of the nematode densities to host responses such as sprouting of shoots, symptom appearance, survivality of plants and weight of 4-year old ginseng roots were significant at and mostly before and after the time periods of survey.

• Journal of Ecology and Environment
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• v.47 no.4
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• pp.282-289
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• 2023

Background: As wildlife habitats are being destroyed and growth environments are changing, the survival of animals and plants is under threat. Epilobium hirsutum L., a species that inhabits wetlands, has held legally protected status since 2012. However, no specific measures are currently in place to protect its habitat, leading to a decline in remaining populations as a result of land use change and human activities. Results: The growth environment (including location, climate, land use, soil, and vegetation) of the five habitat sites (Samcheok, Taebaek1, Taebaek2, Cheongsong, Ulleung) of E. hirsutum L. was investigated and analyzed. These habitats were predominantly situated in flat areas with gentle south-facing slopes, at an average altitude of 452.7 m (8-726 m) above sea level in Gangwon-do and Gyeongsangbuk-do. The average annual temperature ranged 11.5℃ (9.2℃-12.9℃), whereas the average annual precipitation ranged 1,304.5 mm (1,062.7-1,590.7 mm). The surrounding land use status was mainly characterized by mountainous areas, and human interference, such as agricultural land and roads, was commonly found in proximity to these natural habitats. Soil physicochemical analysis revealed that the soil was predominantly sandy loam with a slightly high sand content. The average pH measured 7.64, indicating an alkaline environment, and electrical conductivity (EC) averaged 0.33 dS/m. Organic matter (OM) content averaged 66.44 g/kg, available phosphoric acid (P₂O₅) content averaged 115.73 mg/kg, and cation exchange capacity (CEC) averaged 23.43 cmolc/kg. The exchangeable cations ranged 0.09-0.43 cmol⁺/kg for potassium (K), 10.23-16.21 cmol⁺/kg for calcium (Ca), 0.67-4.94 cmol⁺/kg for magnesium (Mg), and 0.05-0.74 cmol⁺/kg for sodium (Na). The vegetation type was categorized as E. hirsutum community with high numbers of E. hirsutum L., Persicaria thunbergii (Siebold & Zucc.) H. Gross, Phragmites japonica Steud., Humulus japonicus (Siebold & Zucc.), and Bidens frondosa L.. An ecological flora analysis, including the proportion of lianas, naturalized plants, and annual herbaceous plants, revealed that the native habitat of E. hirsutum L. was ecologically unstable. Conclusions: Analysis of the habitat of E. hirsutum L., a class II endangered wildlife species, provided essential data for local conservation and restoration efforts.

• Journal of the Korean Chemical Society
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• v.33 no.2
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• pp.177-184
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• 1989

Acidic properties of ZSM-5 zeolite catalysts were investigated by temperature-programmed desorption technique and ir spectroscopy. Ammonia t.p.d. pattern of HZSM-5 showed three different states, designated as ${\alpha}$,${\beta}$ and ${\gamma}$. The amount of ${\gamma}$-state decreased with increasing $SiO_2/Al_2O_3$ ratio, and upon cation-exchanging with alkali cations. From the ir adsorption spectra of absorbed pyridine and the reaction study of toluene alkylation, the ${\gamma}$-state could be explained to be due to the strong Bronsted acid sites of H-ZSM-5. Also they showed that the interaction between alkali cation-exchanged ZSM-5 and bases, i.e. $NH_3$ and pyridine, was increasing with decreasing the size of cations.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.291.1-291.1
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• 2016

Graphene by one of the two-dimensional (2D) materials has been focused on electronic applications due to its ultrahigh carrier mobility, outstanding thermal conductivity and superior optical properties. Although graphene has many remarkable properties, graphene devices have low on/off current ratio due to its zero bandgap. Despite considerable efforts to open its bandgap, it's hard to obtain appropriate improvements. To solve this problem, heterojunction barristor was proposed based on graphene. Mostly, this heterojunction barristor is made by transition metal dichalcogenides (TMDs), such as molybdenum disulfide ($MoS_2$) and tungsten diselenide ($WSe_2$), which have extremely thickness scalability of TMDs. The heterojunction barristor has the advantage of controlling graphene's Fermi level by applying gate bias, resulting in barrier height modulation between graphene interface and semiconductor. However, charged impurities between graphene and $SiO_2$ cause unexpected p-type doping of graphene. The graphene's Fermi level modulation is expected to be reduced due to this p-doping effect. Charged impurities make carrier mobility in graphene reduced and modulation of graphene's Fermi level limited. In this paper, we investigated theoretically and experimentally a relevance between graphene's Fermi level and p-type doping. Theoretically, when Fermi level is placed at the Dirac point, larger graphene's Fermi level modulation was calculated between -20 V and +20 V of $V_{GS}$. On the contrary, graphene's Fermi level modulation was 0.11 eV when Fermi level is far away from the Dirac point in the same range. Then, we produced two types heterojunction barristors which made by p-type doped graphene and graphene treated 2.4% APTES, respectively. On/off current ratio (32-fold) of graphene treated 2.4% APTES was improved in comparison with p-type doped graphene.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.279-282
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• 2003

In this paper, to apply piezoelectric transformer for PDA backlight inverter, piezoelectric transformer using the composition which $Nb_2O_5$ added into PNW-PMN-PZT ceramics was fabricated as Rosen-type one with the size of $1165mm^3$. And their electrical characteristics were investigated with the variations of load resistance and driving frequency And then, the driving circuit for PDA CCFL(0.6W) which composed of the two MOSFETs connecting in series was manufactured using piezoelectric transformer, VCO and one-chip microprocessor. After driving for 25 min using the proposed circuit for PDA CCFL(0.6W), driving frequency of 214.4kHz, input voltage of 31.78 V and input current of 21.1mA were shown. And then, output voltage of 293.2 V and output current of 2.2mA were shown. At the same time, efficiency of 96.2$\%$ and temperature rise of $3.6^{\circ}C$ were appeared at the piezoelectric transformer.

• Applied Biological Chemistry
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• v.39 no.1
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• pp.84-88
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• 1996

To determine brassinolide in rice(Oriza sativa L.) using HPLC equipped with fluoresence detector, a highly sensitive fluorescence reagent. 1-cyanoisoindole-2-m-phenylboronic acid, was synthesized from the reaction of o-phthaldehyde, m-phenylboronic acid and KCN, then was reacted with brassinolide. The formation ratio of brassinolide boronate exhibited 90% up at the ratio of $20\;:\;1({\mu}g/{\mu}g)$ of 1-cyanoisoindole-2-m-phenylboronic acid and brassinolide respectively. The detection limit of brassinolide boronate with fluoresence detector was 0.16 ng. Brassinolide was detected in heading stage(biomass : 10 g) and panicle formation stage(biomass : 100 g) of the rice(Oryza sativa L.) with quantity of $0.8\;{\mu}g\;and\;0.2\;{\mu}g$respectively. However, brassinolide was not detected in blooming and elongation stage.

• Koreanishche Zeitschrift fur Deutsche Sprachwissenschaft
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• v.4
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• pp.267-287
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• 2001

In dieser Arbeit habe ich die $M\"{o}glichkeit$ und die Grenze der Interpretation in der $\"{U}bersetzung$ behandelt, wobei das Wesen der Bedeutung in Betracht kommt. In diesem Zusammenhang wollte ich auch feststellen, was libersetzt werden soll. Dazu wird zuerst betrachtet, was $f\"{u}r$ die Bedeutung eines Wortes charakteristisch ist und worauf die Mehrdeutigkeit beruht. $Anschlie{\ss}end\;wird\;\"{u}ber\;die\;\"{A}quivalenz$ bei der $\"{U}bersetzung\;und\;die\;Universalit\"{a}t$ im Gedanken und in der Sprache $erw\"{a}hnt.\;Abschlie{\ss}end$ habe ich einige Beispiele $angef\"{u}hrt$, die Unterschiede im Sprachgebrauch und in der sprachlichen Struktur zeigen. Coseriu stimme ich in dem Punkt zu, dass 'nicht all das in einem Text gemeinte, sondern ... nur das in diesem Text sprachlich Gesagte, d.h. das durch die Sprache in ihrer Zeichenfunktion $Ausgedr\"{u}ckte$, das Verbalisierte,' $\"{u}bersetzt$ werden soll, was jedoch nicht $hei{\ss}t$, dass die $W\"{o}rter\;oder\;die\;S\"{a}tze\;\"{u}bersetzt$ werden soll. Trotz der Verschiedenheit der einzelsprachlichen Gestaltung der Bedeutungen und der Sprachstrukturen kann man mit Hilfe der Bedeutung die gleiche Bezeichnung und den gleichen Sinn in einer anderen Sprache wiedergeben, wobei der Kontext und die $Universalit\"{a}t$ im Gedanken und in der Sprache eine $gro{\ss}e$ Rolle spielt. In diesem Zusammenhang findet man einerseits die Bedeutung der $\"{U}bersetzungswissenschaft$, deren Aufgaben darin bestehen, den Unteschied und die Gemeinsamkeit zwischen den Sprache sowohl im Hinblick auf die sprachlichen Struktur als auch auf den Gebrauch festzustellen. Die Grenze der $\"{U}bersetzungswissenschaft$ besteht andererseits darin, 'dass man eigentlich nicht alles, was man meinen, auch sagen kann und dass nicht alles, was gesagt werden kann, auch von anderen verstanden werden kann'.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.177-180
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• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.