• 한국진공학회지
• /
• 제10권3호
• /
• pp.328-334
• /
• 2001

초박막 게이트 유전막 및 비휘발성 기억소자의 게이트 유전막으로 연구되고 있는 NO/$N_2$O 질화산화막 및 재산화질화산화막의 특성을 D-SIMS(dynamic secondary ion mass spectrometry), ToF-SIMS(time-of-flight secondary ion mass spectrometry), XPS(x-ray Photoelectron spectroscopy)으로 조사하였다. 시료는 초기산화막 공정후에 NO 및 $N_2$O 열처리를 수행하였으며, 다시 재산화공정을 통하여 질화산화막내 질소의 재분포를 형성토록 하였다. D-SIMS 분석결과 질소의 중심은 초기산화막 계면에 존재하며 열처리 공정에서 NO에 비해서 $N_2$O의 경우 질소의 분포는 넓게 나타났다. 질화산화막내 존재하는 질소의 상태를 조사하기 위하여 ToF-SIMS 및 XPS 분석을 수행한 결과 SiON, $Si_2$NO의 결합이 주도적이며 D-SIMS에서 조사된 질소의 중심은 SiON 결합에 기인한 것으로 예상된다. 재산화막/실리콘 계면근처에 존재하는 질소는 $Si_2$NO 결합형태로 나타나며 이는 ToF-SIMS로 얻은 SiN 및 $Si_2$NO 결합종의 분포와 일치하였다.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2008년도 추계학술대회 논문집
• /
• pp.91-94
• /
• 2008

Newly developed Atom Probe Tomography (APT) technique can provide the highest available spatial resolution, 3D tomography imaging and quantitative chemical analysis in a sub-nm scale. As a complementary technique to APT, Nano-secondary ion Mass Spectroscopy (SIMS) also provides the boron distribution in micro-scale. Therefore, the exact behavior of boron at either grain boundary or grain interior in steels can be investigated by the combination of APT and SIMS techniques from the sub-nanometer scale to the micrometer scale. The results obtained by both APT and SIMS revealed that the boron atoms were mainly segregated to the grain boundaries rather than to the grain interior in the steels containing 50ppm and 100ppm boron. It also found that carbon atoms were segregated at the boron enriched regions, which were thought to be retained austenite phase due to the chemical composition of carbon atoms.

• 한국전기전자재료학회논문지
• /
• 제15권7호
• /
• pp.576-582
• /
• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.17-20
• /
• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.279-279
• /
• 2013

차세대 태양전지로 주목받는 화합물 박막 태양전지(CIGS, CdTe, etc)는 광흡수계수가 매우 높아 얇은 두께의 광흡수층으로도 빛을 효과적으로 흡수할 수 있으므로 광흡수층의 역할이 매우 중요하며 이에 대한 정확한 정보와 이해는 필수적이다. 특히 GIGS 박막 태양전지의 정량 및 각 원소의 깊이 방향의 분포를 분석하는 것은 박막형 태양전지 개발에 크게 기여한다 [1,2]. 본 실험에서는 조성비를 알고 있는 균질한 CIGS박막을 표준시료로 사용하여 ICP-MS로 측정하여 평균농도를 구한 뒤 TOF-SIMS, D-SIMS, Auger Electron Spectroscopy (AES) 로 깊이 방향 분석 결과를 통해 상대감도(RSF)를 계산한 후 각 원소의 농도로 변환하여 정량분석 결과를 얻었다. 일반적으로 손쉽게 정량적인 정보를 얻는 AES에 비해 정량성이 떨어지는 TOF-SIMS와 D-SIMS는 스퍼터링시 사용되는 Cs 빔과 시료 내 금속과의 클러스터 이온(GaCs+와 InCs+)의 깊이 방향 조성을 이용하면 매트릭스 효과를 배제할 수 있어서 좀 더 정확한 정량 분석이 가능하므로 시료내 금속과 Cs 이 결합된 클러스터 이온의 깊이 방향 조성을 측정하여 각원소의 농도를 계산하였고 스퍼터링 에너지를 포함한 실험 변수에 따른 재현성 및 정량성의 차이를 비교분석하였다. 또한 CIGS층에 불순물로 들어 있는 미량원소들의 깊이 분포도도 함께 관찰하였다.

• 한국전기전자재료학회논문지
• /
• 제17권11호
• /
• pp.1156-1166
• /
• 2004

Antimony profiles by MeV implantation are measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR). The moments of SIMS and simulated profiles are calculated and compared for the exact range in MeV energy. SRIM, DUPEX, ICECREM, and TSUPREM4 simulation programs are used for the calculation of range 1D, 2D. SRIM is a Monte Carlo simulation program and different inter-atomic potentials can be used for the calculation of nuclear stopping power cross-section (Sn) and range moments. Nevertheless, the range parameters were not influenced from nuclear stopping power in MeV. Through the modification of electronic stopping power cross-section (Se), the results of simulation are remarkably improved and matched very well with SIMS data. The values of electronic stopping power are optimized for Sb high energy implantation. For the electrical activation, Sb implanted samples are annealed under $N_2$ and $O_2$ ambient. Finally, Oxidation retard diffusion(ORD) effect of Sb implanted sample are demonstrated by SR measurements and ICECREM simulation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.276-276
• /
• 2013

Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) and Atomic Force Microscopy (AFM) are the useful instruments to measure nanostructures of material surfaces. Surface pattern formation in blending homopolymer and diblock copolymer films was investigated as a function of film thickness and annealing conditions. In this study, surface structures of blending homopolymer [deuterated polystyrene (Mn 20,000), poly (methyl methacrylate) (Mn 18,000)] and diblock copolymer [Poly (deuteratedstyrene(d8)-b-methyl methacrylate) (Mn 19,500-18,100)] films were observed. The AFM result indicated that the nanostructures and film thickness depended on temperature, concentration and solvent. TOF-SIMS depth profiling was obtained for the lamellar morphology of symmetric dPS-b-PMMA which is found to orient parallel to the surface of the substrate. Elemental and molecular depth profiles measured in the negative ion mode by a Cs+ primary ion beam demonstrate variations in hydrogen, deuterium, carbon, oxygen, hydrocarbons and deuterated hydrocarbons within the diblock copolymer according to the depth.

• 전자공학회논문지D
• /
• 제35D권3호
• /
• pp.46-55
• /
• 1998

This stud demonstrates the profiles of heavy ions (As, Sb) in silicon by high energy (1~10 MeV) implantation. Implanted profiles were measured by SIMS (Cameca 4f) and compared with simulation results (TRIM) program and analytical description method using Pearson function). The experimental results have a little bit deviation with simulation data in the case of As high energy implatation. But in the case of Sb, the experimental results are in good agreement with TRIM data. SIMS profiles are perfectly fitted with a analytical description method only using one pearson function in Sb implantation. but in the case of As, fitted profilesshow with a little bit deviations by channeling effects of SIMS profiles. Thermal annealing for electrical activation of implanted ions was carried out by furnace annealing and RTA(Rapid Thermal Annealing). Concentration-depth profile after heat treatement were measured by SR(Spreading Resistance) method.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.17-20
• /
• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• Applied Science and Convergence Technology
• /
• 제24권6호
• /
• pp.203-214
• /
• 2015

We have been developing a new label-free nanobio imaging platform using non-linear optics such as Coherent Anti-Stokes Raman Spectroscopy (CARS) and ion beam techniques based on sputtering and scattering such as Secondary Ion Mass Spectrometry (SIMS) and Medium Energy Ion Scattering Spectroscopy (MEIS), which have been widely used for atomic and molecular level analysis of semiconductors and nanomaterials. To apply techniques developed for semiconductors and nanomaterials for biomedical applications, the convergence of nano-analysis and biology were tried. Our activities on label-free nanobio imaging during the last decade are summarized in this review about non-linear optical 3D imaging, ellipsometric interface imaging, SIMS imaging, and TOF-MEIS nano analysis for cardiovascular tissues, collagen thin films, peptides on microarray, nanoparticles, and cell adhesion studies and finally the present snapshot of nanobio imaging and the future prospect are described.