• Journal of Navigation and Port Research
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• v.27 no.5
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• pp.513-517
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• 2003

In this paper, a VCDRO(Voltage Control Dielectric Resonator Oscillator} applied to X-band as stable source is implementea and constructed with a MESFET for low noise, a dielectric resonator of high frequency selectivity and high Q varactor diode to obtain a good phase noise performance and stable sweep characteristics. The designed circuits is simulated through the harmonic balance simulation technique to provide the optimum performance. The measured results of a fabricated VCDRO show that output is 2.22dBm at 12.05GHz. harmonic suppression -30dBc. phase noise -130dBc at 100kHz offset. and sweep range of varactor diode $\pm$18.7MHz. respectively. This oscillator will be available to X-band application.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.2
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• pp.50-54
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• 2015

In this paper, we report on a high performance 94 GHz MMIC mixer module using 0.1-um metamorphic high electron mobility transistors (MHEMTs). A modified resistive mixer with a RF amplifier was proposed in this work for low conversion loss and high LO-RF isolation. The MMIC mixer module was fabricated using a MMIC chip and CPW-waveguide transitions. The fabricated mixer chip and module showed a low conversion loss of 6.3 dB and 9.5 dB, and LO-RF isolations of 24.8 and 30.4 dB at 94 GHz, respectively. This results are superior to those of previously W-band (75-110 GHz) MMIC mixers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.12 s.103
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• pp.1194-1205
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• 2005

This paper proposes a uni-planar elliptical element UWB antenna with band-notched characteristic and modified pound plane fed by CPW. The antenna achieves VSWR below 2 for UWB band(3.1 GHz${\~}$10.6 GHz). In addition, a band-notched characteristic is achieved by inserting a horizontal slot on the radiation element to avoid the interference with 5 GHz(5.15 GHz${\~}$5.825 GHz) band limited by IEEE 802.1la. The antenna has a thin profile, compact size, and ease of manufacture by adopting a CPW feed structure without any additional background plane. Measured data show that the proposed antenna has good return loss below -10 dB, about 2.1 dB${\~}$4.75 dB maximum gain over the bandwidth, omni-directional radiation patterns, linear phase response.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.138-144
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• 2008

In this paper, we propose a novel single-feed dual-band circular polarization square patch antenna for GPS(global positioning system)/DMB(digital multimedia broadcasting) receiver. The proposed antenna has folded slots at the 4 corners and a diagonal slot at the center of the square patch. The measured -10 dB impedance bandwidths of the proposed antenna were 84 MHz ranging from 1.516 GHz to 1.600 GHz for the low frequency band(GPS) and 109 MHz ranging from 2.596 GHz to 2.705 GHz for the high frequency band(DMB). The measured peak linear antenna gains of the proposed antenna were 6.23 dBi at 1.575 GHz for GPS and 6.97 dBi at 2.642 GHz for DMB band.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.11A
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• pp.891-897
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• 2009

In the satellite communications, the frequency sharing with other services is important because the service coverage is generally very wide and overlaps with those of other wireless services. This paper introduces a new technique to mitigate interference into the terrestrial stations from the Earth station in the same frequency band by means of band segmentations which are portions of the overall operation frequency band divided by frequency reuse factor. We consider a multi-beam satellite system, where frequency bands are reused in each satellite cell. The terrestrial stations use band segmentations of adjacent satellite cells, and this may decrease the interferences. By this way, the terrestrial and satellite systems can share the same frequency bands efficiently. The simulation is performed at frequency reuse factors, seven and three. The simulation results show that the proposed method can highly reduce the interference level to -168 dBW or -163 dBW depending on the considered frequency reuse factor from -117 dBW at the 90% link availability.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.503-510
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• 2007

This paper proposes the design scheme of internal triple band antenna intended for using in GSM900, DCS1800, and PCS1900 bands. The suggested folding metal plates of the two branches are mounted on a dielectric coated ground plane for size miniaturization and durability. Return losses are overlapped when length of metal branches are controlled. This is important technique for wide band operation. For the suggested antenna geometry its return loss was calculated by HFSS 9 simulator, and was shown to be -10 [dB] less within the required band. Also, gain and radiation pattern of antenna were measured using far field measurement system in an anechoic chamber. The measured peak gain is more than 3.0 [dBi], and the average gain is over -1.0 [dBi] for the triple band, which is regarded as satisfactory for the internal antenna application. Also, the radiation pattern for two frequencies shows a similar shape each other within the required band.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.127-132
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• 2018

In this paper, a high conversion gain cascode mixer was designed in W-band and verified by the fabrication and measurements. In the high frequency band such as a W-band, the conversion loss of a mixer is increased because of the poor performance of transistors. This high conversion loss of the mixer requires additional circuits which can give an extra gain such as an RF buffer amplifier, and this can affects the linearity and stability of the overall systems. Therefore, it is necessary to maximize the conversion gain of the mixer. To maximize the conversion gain of the mixer, biases of the transistor were optimized, and output load impedance was optimized by the load-pull simulations. The designed mixer was fabricated in $0.1-{\mu}m$ GaAs pHEMT technology and verified by the measurements. The measurement results shows a maximum conversion gain of -4.7 dB at W-band and an input 1-dB compression point of 2.5 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.781-787
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• 2004

In this paper, a novel dual and wide band aperture stacked patch antenna for Cellular/PCS/IMT-2000 base station is presented. It consists of single microstrip patch having notches along the radiating patch, two dielectric substrates and a form material. To achieve wide band characteristic, we utilize the coupling effect between the notched patch and the resonant aperture in the ground plane and by properly cutting notches on the patch, an aperture stacked patch antenna could be designed to yield dual frequency operation. By the proper choice of resonant aperture size and height of a foam material, dual and wide band characteristic could be realized the measured impedance bandwidth(1:1.5 VSWR) of designed antenna at lower band(860 MHz) reaches 77 MHz and covers the Cellular CDMA band(824∼894 MHz). The measured impedance bandwidth(1:1.5 VSMR) of the designed antenna at upper band(1,960 MHz) is about 550 MHz and covers both the PCS band(1,750∼l,870 MHz) and the for-2000 band(1,920∼2,170 MHz). Good broadside radiation with high gain(5.65∼7.4 dBi) characteristics have also been observed.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.5
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• pp.162-167
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• 2009

In this paper, we present a compact Ultra-Wideband band-pass filter using a high-pass filter and low-pass filter. The structure of our proposed band-pass filter is very simple and the DGS(Defected Ground Structure) structure is used to get the low-pass filter characteristic. Our proposed band-pass filter can be much smaller than a cascaded filter. As a result of measurement the insertion loss is less than 0.5dB throughout the pass-band of $2.1GHz{\sim}10.56GHz$, the return loss is more than 20dB and the group delay maximum variation is 0.23ns from 0.12ns to 0.35ns.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.10
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• pp.832-835
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• 2017

In this paper, V-band differential low noise amplifier(LNA) using 65-nm CMOS process for high speed wireless data communication is presented. The LNA is composed of 3-stage common-source differential amplifiers with neutralization of feedback capacitances using MOS capacitors and impedance matching utilizing transformers. The fabricated LNA has a peak gain of 23 dB at 63 GHz and 3 dB bandwidth of 6 GHz. The chip area of LNA is $0.3mm^2$ and the LNA consumes 32 mW DC power from 1.2 V supply voltage.