• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.3
• /
• pp.177-184
• /
• 2000

The effect of the buyancy and thermocapillarity for differnent aspect ratio of flow field on melt motion and mass transfer has been numerically investigated in magnetic Czochralski crystal growth of silicon. During the process of crystal growth, the melt depth of crucible reduces so the aspect ratio of flow field also reduces. Therefore the shape of magnetic field of the flow field changes and the flow pattern also changes significantly. Together with the melt flow which forms the Marangoni convection (or thermocapillary flow) that comes from the inside the flow field, a flow circulation is observed near the corner close both to the crucible wall and the free surface. Due to this circulation, buoyancy effect has been turned out to be local rather than global. As the aspect ratio decreases, the radial component of the magnetic field prevails compared with the axial component in the flow field. Under the influence of this magnetic field, the melt flow and the temperature distribution in a meridional plane tend to depend on the radial position. As the aspect ratio decreases, the temperature gradient near the edge of the crystal decreases yielding smaller thermocapillarity, and the oxygen concentration near the crystal and the oxygen incorporation rate also decrease.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.2
• /
• pp.45-50
• /
• 2005

During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

• Journal of the Korean Ceramic Society
• /
• v.39 no.8
• /
• pp.711-714
• /
• 2002

The Ce, Mn: $LiTaO_3$ crystals were grown by Czochralski method in congruent ${\varphi}$3＂ $LiTaO_3$ single crystal growing conditions. Concentrations of Ce and Mn in melt were respectively 0.1 mole%. As-grown crystals were red, transparent and the grown crystals were tested with oxidation/reduction treatment for clor and other properties. Influence of Ce and Mn dopants on $LiTaO_3$ crystal properties was discussed. And the nonlinear optical properties of the Ce, Mn: $LiTaO_3$ crystal are being studied.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.33 no.3
• /
• pp.91-96
• /
• 2023

To verify the quality of bubbles during the use of quartz glass crucibles (QC), an appropriate accelerated testing method was proposed. The bubble state of discarded waste crucibles obtained from actual Czochralski (Cz) processes was analyzed, and optimal heat treatment conditions were suggested by varying temperature, pressure, and time using the QC test piece. By subjecting the samples to heat treatment at 1450℃, 0.4 Torr, and 40 hours, it was possible to control the bubble size and density to a similar level as those generated in the actual Cz process. In particular, by selecting a relatively lower pressure of 0.4 Torr compared to the typical range of 10~20 Torr applied in the Cz process, the time required for accelerated bubble formation testing could be reduced. However, it was determined that increasing the heat treatment temperature to 1550℃ led to the phenomenon of Ostwald ripening, resulting in larger bubbles and a rapid decrease in density. Therefore, it was concluded that it was not a suitable condition for the desired b ake test.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.04a
• /
• pp.221.2-221
• /
• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.3
• /
• pp.359-365
• /
• 1997

$K_2CoCl_4$, single crystals were grown by the Czochralski method in Ar atmosphere. The thermal hysteresis of the dielectric constant at $T_c$ was investigated. $K_2CoCl_4$ crystal shows ionic hopping mechanism due to $K^+$ ion and the activation energy is nearly 0.62 eV. Thermal expansions along a-, b-, and c-axis of $K_2CoCl_4$, were measured on heating and the thermal expansion coefficients in each phase were calculated. From the result of the optical absorption measurement, we interpreted the absorption peak as transition energy between the splitted energy levels of the Co ion in the crystal field and it showed the possibility of the application to the optical band filter between 800 nm and 1200 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.2 no.1
• /
• pp.20-29
• /
• 1992

In $BaTiO_3-NaNbO_3$ system, complete series of solid solution occurs and $30BaTiO_3{cdot}70NaNbO_3$ composition is congruently melted. Single crystals of $30BaTiO_3{cdot}70NaNbO_3$, composition were grown by Czochralski method in this investigation. Single crystals with dimensions of 15 - 20mm diameter and 20 - 30mm length, were grown at the pulling rate of 2.0mm/h and the rotation rate of 5.0 -l0rpm. Core structures were found in the grown crystals and inclusions, cellular boundaries existed at the core region. The origin of core occuring was unstability of the crystal- melt interface due to the poor conductivity of latent heat through the crystal during the crystal growing process. Obtained crystals were optically homogeneous except the core region and showed high optical transmittance in the visible range.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.278-285
• /
• 1998

It was known that the C-IC transition in the mixed crystal $(A_{1-x}A^'_x)_2ZnCl_4$ is smeared out with increasing x, which is attributed to the pinning effect of the doped A' ions. In this study, we introduce a new mixed crystal system $K_2Zn_{1-X}Co_XCl_4$, where doped Co ions do not destroy the orientation of the polarization in C phase and preserve the long range ordering of IC phase. We grew a series of mixed crystals $K_2Zn_{1-X}Co_XCl_4$ for x=0, 0.001, 0.005, 0.01, 0.05, 0.1, 0.3, 0.5, 0.7, 1 by the Czochralski method and investigated the real composition of the mixed crystals, structure and the change of the C-IC phase transition with increasing x by the thermal analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.2
• /
• pp.91-95
• /
• 2000

The effects of argon gas flow on the axial temperature gradient near the interface, the oxygen concentration, and the radial oxygen uniformity was investigated for 8-inch CZ silicon growth. As argon flow rate was increased, the temperature gradient was increased in the crystal near the crystavmelt interface and the oxygen content in the crystal was decreased. But the radial oxygen uniformity was deteriorated. It was found that argon flow is one of the important growing parameters to affect the quality of crystals such as oxygen content and uniformity.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1997.10a
• /
• pp.155-159
• /
• 1997

We investigated the effect of mechanical backside damage in Czochralski silicon wafer. The intensity of mechanical damage were evaluated by minority carrier recombination lifetime by a laser excitation/microwave reflection photoconductance decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photoacoustic displacement values are also increased proportionally.