• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.18-28
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• 1998

A laboratory experiment was made of a control of temperature oscillation in Czochralski convection. Numerical computation was also made to delineate the control of temperature oscillation. The suppression of temperature oscillation was achieved by varying the rotation rate of crystal rod ($\Omega=\Omega_0(1+A sin 2{\pi}ft/t_p)$), where A denotes the amplitude of rotation rate and f the frequency factor. Based on the inherent dimesionless time period of temperature oscillation ($t_p$), the suppression rate of temperature oscillation was characterized by the mixed convection parameter ($0.217{\leq}Ra/PrRe^2{\leq}1.658$). The optimal values of A and f were also scrutinized. To understand the suppression mechanism of temperature oscillation, the controls of isotherm($\theta$) and equi-vorticity($\omega$) were investigated.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.52-57
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• 1992

The macro defects of $LiNbO_3$ crystals grown by the Czochralski method were strongly influenced by the single crystal growth parameters such as growth rate, thermal gradient and crystal rotation rate. The optimum growth conditions of a $LiNbO_3$ single crystal with 1" in diameter were $70~100^{circ}C/cm$ temperature gradient, 5~10 mm/hr growth rate and 40 rpm crystal rotation rate. In these conditions, we could grow crystals which had no cellular structure with easy diameter control, and any crack was not formed after the crystal was cooled.oled.

• Korean Journal of Crystallography
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• v.4 no.1
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• pp.11-17
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• 1993

Corundum single crystals were grown by the Czochralski technique. Relationships between crystal quality and crystal growth factors such as pulling rate, rotation rate and temperature of the melt were investigated. Optimum pulling and rotation rate for high quality corundum single crystal growth were 4.0mm/hr, 30rpm respectively. Pore was a main defect in corundum crystal and also discussed how to remove this defect by melt temperature control. Growth direction of as grown crystals was identified with(0001). And this direction had largest growth rate. Room temperature absorption spectra were measured and discussed for Cr3+ion doped and non-doped corundum crystals.

• Journal of Sensor Science and Technology
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• v.17 no.3
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• pp.217-222
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• 2008

$BaCl_2$ crystals were grown by using the Czochralski method, and their scintillation properties were measured. The emission spectrum was located in the range of $370{\sim}450$ nm, peaking at about 400 nm. The fluorescence decay time was approximately 75.9 ns for 662 keV ${\gamma}$-rays excitation. The energy resolution was about 24.4 % for $^{137}Cs$ 662 keV ${\gamma}$-rays, and the ${\alpha}/{\beta}$ ratio to $\alpha$ particles from a $^{210}Po$ 5.4 MeV was about 0.25.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.148-153
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• 2001

New piezoelectric $Ca_{3}NbGa_{3}Si_{2}O_{14}$ (CNGS) single crystal was grown using the Czochralski technique. The crystal structure of CNGS was found to be isostructural with $A_{3}BC_{3}D_{2}O_{14}$. The unit cell parameters were a=8.087 and c=4.983 and the space group was P321. The distribution of each cation was found to be ordered in each site. Some piezoelectric properties of CNGS are showed.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.184-187
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• 1994

Nuclear magnetic resonance of $^{133}Cs$ in a $CsMnCl_{3}$ single crystal grown by the Czochralski method has been investigated by employing a Bruker FT NMR spectrometer. The $^{133}Cs$ resonance of two different groups were recorded. Various transitions belonging to two cesium spectra of a different intensity ratio are analyzed. The quadrupole coupling constant of Cs(I) is $0.15{\pm}0.01$ MHz, and that of Cs(II) is $0.21{\pm}0.01$ MHz. The anisotropy parameter is zero for both. The principal axes of the EFG tensors for these two sites are found to be the same. The Z axis, conventionally the largest component of the EFG tensor, is parallel to the crystallographic c-axis.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.237-240
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• 2003

This paper reports the characteristics of TFTs, formed inside a location-controlled grain: "single-crystalline" Si TFTs (c-Si TFTs). Position of the grains were controlled with a great precision by "${\mu}-Czochralski$ (grain-filter) process". Effects of process parameters, such as, deposition method of gate $SiO_2$, crystallization energy density and position of the channel with respect to the grain filters on TFT characteristics is investigated. It is concluded that the characteristics of TFTs drastically improved by avoiding the grain filter from the channel region. With TFTs having the current-flow direction parallel to radial direction from the grain-filter, electron mobility and subthreshold swing of 600 $cm^2/Vs$ and 0.21 V/dec. respectively are obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.215-222
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• 2009

Many concepts of external magnetic field applications in crystal growth processes have been developed to control melt convection, impurity content and growing interface shape. Especially, travelling magnetic fields (TMF) are of certain advantages. However, strong shielding effects appear when the TMF coils are placed outside the growth vessel. To achieve a solution of industrial relevance within the framework of the $KRISTMAG^{(R)}$ project inner heater-magnet modules(HMM) for simultaneous generation of temperature and magnetic field have been developed. At the same time, as the temperature is controlled as usual, e.g. by DC, the characteristics of the magnetic field can be adjusted via frequency, phase shift of the alternating current (AC) and by changing the amplitude via the AC/DC ratio. Global modelling and dummy measurements were used to optimize and validate the HMM configuration and process parameters. GaAs and Ge single crystals with improved parameters were grown in HMM-equipped industrial liquid encapsulated Czochralski (LEC) puller and commercial vertical gradient freeze (VGF) furnace, respectively. The vapour pressure controlled Czochralski (VCz) variant without boric oxide encapsulation was used to study the movement of floating particles by the TMF-driven vortices.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.645-648
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• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• Journal of Sensor Science and Technology
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• v.16 no.5
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• pp.337-341
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• 2007

$CsSrCl_{3}$ crystal was grown using Czochralski method from equimolar mixture of CsCl and $SrCl_{2}$. The spectrum range of the luminescence excited by 205 nm of wavelength was about $280{\sim}550$ nm, and its peak emission appeared at 343 nm. The luminescence decay curve of the $CsSrCl_{3}$ revealed two exponential components with time constants of 60 ns and 700 ns. The energy resolution for $^{137}Cs$ 662 keV ${\gamma}$-ray was 10.3 %. The pulse shape was linear at high energy, but some deviation existed in the low energy region.