• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.682-686
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• 2016

A fully differential RC calibrator for accurate cut-off frequency of a programmable channel selection filter is proposed. The proposed RC calibrator consists of an RC timer, clock generator, synchronous counter, digital comparator, and control block. To verify the proposed RC calibrator, a six-order Chebyshev programmable low-pass filter with adjustable 3 dB cut-off frequency, which is controlled by the proposed RC calibrator, was implemented in a $0.18-{\mu}m$ CMOS technology. The channel selection filter with the proposed RC calibrator draws 1.8 mA from a 1.8 V supply voltage and the measured 3 dB cut-off frequencies of the channel selection LPF is controlled accurately by the RC calibrator.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.129.1-129
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• 2000

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.465-465
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• 2010

Cut off probe, the efficient method, can measure the plasma parameters like the plasma electron density and the electron temperature. Plasma potential is also one of the important parameters in plasma processing but cannot be measured by cut off probe yet. Thus we developed method to measure plasma potential by focusing on relation between bias on a tip and sheath around tip. The system consist of a ICP(Inductive Coupled Plasma) source, a Network analyzer and a bias tee that can be bridge apply DC voltage on the cut off probe tip. Plasma potential is identified by using this system. The results corresponded well with the measured results by single langmuir probe(SLP).

• 전기화학회지
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• 제7권1호
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• pp.32-37
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• 2004

리튬 이차전지의 음극재료로서 천연흑연의 충방전 속도에 따른 용량특성을 조사하였다 정전류 조건에서 $0.0-2.0V(vs. Li/Li^+)$의 범위에서 충방전 하였을 때, 충전전류가 증가할수록 충전반응의 과전압이 증가하여 $Li^+$이온이 충분히 삽입되지 못한 상태에서 컷오프 전압(0.0 V)에 도달하기 때문에 충전용량은 충전전류의 크기가 클수록 감소하였다. 한편, 방전전류가 증가함에 따라 방전반응의 과전압도 증가하여 0.0-0.3V범위에서 방전반응이 일어나나 방전 컷오프 전압(2.0 V)과는 격차가 커서 $Li^+$이온이 탈리되지 못한 상태에서 방전 컷오프에 도달하는 현상은 없기 때문에 방전용량이 방전전류의 크기에 영향을 받지 않았다. 충전전류가 증가함에 따라 부반응인 리튬 전착반응의 과전압도 증가하므로 충전 컷오프 전압을 0.0V 이하로 낮출 수 있었다. 그러나 $Li^+$이온의 삽입반응에 비해 전착반응의 저항이 적어 충전전류에 따른 전착반응의 과전압 증가에는 한계가 있었다. 1C조건에서 -0.04V까지 충전 z컷오프 전압을 낮추었을 때 리튬의 전착반응은 없었고, 이로부터 약 $11\%$의 방전용량을 증가시킬 수 있었다.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2005년도 전기학술대회논문집
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• pp.1166-1169
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• 2005

This paper describes a new transient voltage suppressor(TVS) with a low insertion loss and a high cut-off frequency to protect antenna circuit from transient voltages. Conventional protection devices have some problems such as a low frequency bandwidth and a high insertion loss. In order to improve these limitations, a coaxal type TVS, which consists of a gas tube is developed. The performance of the proposed transient voltage suppressor is tested by using a combination surge generator specified in IEC 61000-4-5 standard and by using a network analyzer of 40 MHz ${\sim}$ 5 GHz bandwidth. From the experimental results, it is confirmed that the proposed TVS has an enough protection performance in a low insertion loss and a high cut-off frequency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.181-181
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• 2012

The microwave probe for measuring plasma density is widely used for its advantages: First, it is not affected by the reactive gas. Second, it can measure local plasma parameters such as plasma density, plasma potential and plasma temperature. Third, it is simple and robust. A cut-off probe is the one of the most promising microwave probe. Recently, Kim et al. reveals the physics of the cut-off probe but the effect of the sheath on the determination of the plasma density is not explained. In this presentation, for taking account of sheath effects on determination of plasma density from the cut-off peak, a simplified circuit modeling and an E/M simulation are conducted. The results show that occupation ratio of sheath volume between two tips of the cut-off probe and subsequence pressure condition mainly change position of the cut-off peak with respect to plasma frequency. Magnitude of relative voltage taken on the impedance of sheath and the impedance of bulk plasma can explain this effect. Furthermore, effects of gap size, tip radius, and tip length ware revealed based on above analysis.

• 전기학회논문지
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• 제62권6호
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• pp.876-880
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• 2013

The major causes of electrical fire are classified to short circuit fault, overload fault, electric leakage and electric contact failure. The principal factor of the fire is electric arc or spark accompanied with such electric faults. Earth Leakage Circuit Breaker (ELB) and Molded_case Circuit Breaker (MCCB), that is, Residual Current Protective Devices (RCDs) used on low voltage distribution lines cut off earth leakage and overload, but the RCD can not cut off electric arc or spark to be a major factor of electrical fire. As the RCDs which are applied in low voltage distribution panel are prescribed to rated breaking time about 30[ms] (KS C 4613), the RCDs can't perceive to the periodic electric arc or spark of more short wavelength level. To improve such problems, this paper studies on an arc fault circuit interrupter (AFCI) using the distorted voltage wave in electric arc faults. The proposed voltage sensing type AFCI is an electrical fire prevention apparatus of new conception that operates a circuit breaker with sensing the instantaneous voltage drop of line voltage at electrical faults occurrence. The proposed AFCI is composed of control circuit topology using some semiconductor switching devices. Some experimental tests of the proposed AFCI confirm practicality and the validity of the analytical results.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• 한국정보통신학회논문지
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• 제16권3호
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• pp.565-570
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• 2012

본 논문은 LTE-Advanced 시스템을 위한 멀티채널을 선택할 수 있는 저역통과 필터를 제안한다. 제안하는 저역통과 필터는 5 MHz, 10 MHz, 그리고 40 MHz의 3가지 모드의 차단주파수를 제공하며 Active-RC 5차 Chebyshev 구조로 설계되었다. 저전력을 확보하면서 40 MHz의 높은 차단 주파수를 확보하기 위해서 부성 저항을 가지는 PMOS Cross-Connection Load를 사용한 연산증폭기를 필터에 적용하였다. 더불어 공정, 전압, 그리고 온도에 의한 각각의 차단주파수 변화에 대응할 수 있도록 각각 3-bit 제어 가능한 튜닝회로를 추가하였다. 제안하는 필터는 0.13-${\mu}m$ CMOS 공정을 사용하여 설계하였으며 1.2 V 전압에서 총 20.9 mW 전력을 소모한다.