• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.682-686
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• 2016

A fully differential RC calibrator for accurate cut-off frequency of a programmable channel selection filter is proposed. The proposed RC calibrator consists of an RC timer, clock generator, synchronous counter, digital comparator, and control block. To verify the proposed RC calibrator, a six-order Chebyshev programmable low-pass filter with adjustable 3 dB cut-off frequency, which is controlled by the proposed RC calibrator, was implemented in a $0.18-{\mu}m$ CMOS technology. The channel selection filter with the proposed RC calibrator draws 1.8 mA from a 1.8 V supply voltage and the measured 3 dB cut-off frequencies of the channel selection LPF is controlled accurately by the RC calibrator.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.129.1-129
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• 2000

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.465-465
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• 2010

Cut off probe, the efficient method, can measure the plasma parameters like the plasma electron density and the electron temperature. Plasma potential is also one of the important parameters in plasma processing but cannot be measured by cut off probe yet. Thus we developed method to measure plasma potential by focusing on relation between bias on a tip and sheath around tip. The system consist of a ICP(Inductive Coupled Plasma) source, a Network analyzer and a bias tee that can be bridge apply DC voltage on the cut off probe tip. Plasma potential is identified by using this system. The results corresponded well with the measured results by single langmuir probe(SLP).

• Journal of the Korean Electrochemical Society
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• v.7 no.1
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• pp.32-37
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• 2004

The charge/discharge capacity of natural graphite anode in lithium secondary batteries was examined as a function of charge/discharge rate. When the natural graphite anode was galvanostatically cycled in the range of 0.0-2.0V $(vs.\;Li/Li^+)$, the charging capacity decreased with an increase in the charging rate, which is caused by an earlier approach to the charging cut-off (0.0 V) before the complete charging that is in turn caused by an ever-increasing overpotential at higher rates. Even if the overpotential of discharging reaction also increased at higher discharge rates, the discharging reaction took place in the range of 0.0-0.3 V that is far below the discharge cut-off (2.0 V). As a result, the discharge capacity was not affected by the discharge rate because all the lithium ions once intercalated are fully discharged even at high current condition. As the overpotential of lithium deposition reaction also increased at high current condition, the charge capacity of natural graphite could be enlarged by lowering the charging cut-off voltage below 0.0 V, There is, however, a limitation for the lowering of cut-off voltage because the resistance for lithium deposition is smaller than that of lithium intercalation into graphite. When the charge cut-off voltage was lowered down to -0.04 V under IC condition, lithium ions were inserted into graphite without lithium deposition such that the discharge capacity could be raised up to $11\%$.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.06a
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• pp.1166-1169
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• 2005

This paper describes a new transient voltage suppressor(TVS) with a low insertion loss and a high cut-off frequency to protect antenna circuit from transient voltages. Conventional protection devices have some problems such as a low frequency bandwidth and a high insertion loss. In order to improve these limitations, a coaxal type TVS, which consists of a gas tube is developed. The performance of the proposed transient voltage suppressor is tested by using a combination surge generator specified in IEC 61000-4-5 standard and by using a network analyzer of 40 MHz ${\sim}$ 5 GHz bandwidth. From the experimental results, it is confirmed that the proposed TVS has an enough protection performance in a low insertion loss and a high cut-off frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.181-181
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• 2012

The microwave probe for measuring plasma density is widely used for its advantages: First, it is not affected by the reactive gas. Second, it can measure local plasma parameters such as plasma density, plasma potential and plasma temperature. Third, it is simple and robust. A cut-off probe is the one of the most promising microwave probe. Recently, Kim et al. reveals the physics of the cut-off probe but the effect of the sheath on the determination of the plasma density is not explained. In this presentation, for taking account of sheath effects on determination of plasma density from the cut-off peak, a simplified circuit modeling and an E/M simulation are conducted. The results show that occupation ratio of sheath volume between two tips of the cut-off probe and subsequence pressure condition mainly change position of the cut-off peak with respect to plasma frequency. Magnitude of relative voltage taken on the impedance of sheath and the impedance of bulk plasma can explain this effect. Furthermore, effects of gap size, tip radius, and tip length ware revealed based on above analysis.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.6
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• pp.876-880
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• 2013

The major causes of electrical fire are classified to short circuit fault, overload fault, electric leakage and electric contact failure. The principal factor of the fire is electric arc or spark accompanied with such electric faults. Earth Leakage Circuit Breaker (ELB) and Molded_case Circuit Breaker (MCCB), that is, Residual Current Protective Devices (RCDs) used on low voltage distribution lines cut off earth leakage and overload, but the RCD can not cut off electric arc or spark to be a major factor of electrical fire. As the RCDs which are applied in low voltage distribution panel are prescribed to rated breaking time about 30[ms] (KS C 4613), the RCDs can't perceive to the periodic electric arc or spark of more short wavelength level. To improve such problems, this paper studies on an arc fault circuit interrupter (AFCI) using the distorted voltage wave in electric arc faults. The proposed voltage sensing type AFCI is an electrical fire prevention apparatus of new conception that operates a circuit breaker with sensing the instantaneous voltage drop of line voltage at electrical faults occurrence. The proposed AFCI is composed of control circuit topology using some semiconductor switching devices. Some experimental tests of the proposed AFCI confirm practicality and the validity of the analytical results.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.565-570
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• 2012

This paper has proposed a multi-channel low pass filter (LPF) for LTE-Advanced systems. The proposed LPF is an active-RC 5th chebyshev topology with three cut-off frequencies of 5 MHz, 10 MHz, and 40 MHz. A 3-bit tuning circuit has been adopted to prevent variations of each cut-off frequency from process, voltage, and temperature (PVT). To achieve a high cut-off frequency of 40 MHz, an operational amplifier used in the proposed filter has employed a PMOS cross-connection load with a negative impedance. A proposed filter has been implemented in a 0.13-${\mu}m$ CMOS technology and consumes 20.2 mW with a 1.2 V supply voltage.