• Title/Summary/Keyword: Current-controlled oscillator

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Sinusoidal, Pulse, Triangular Oscillator Using Second Generation Current Conveyor

  • Choi, Jin-Ho
    • Journal of information and communication convergence engineering
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    • v.8 no.5
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    • pp.566-569
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    • 2010
  • This paper describes the sinusoidal, pulse, triangular oscillator using second generation current conveyor. To obtain the sinusoidal waveform the circuit blocks are constructed by using all pass filter and integrator. The pulse and the triangular waveforms are obtained from the output of sinusoidal oscillator. The peak-to-peak voltages of sinusoidal and triangular waveforms can be easily controlled by the dc offset voltage. Also the output frequency of the oscillator can be controlled by varying passive elements. The designed circuit is verified by HSPICE simulation.

A Current Compensating Scheme for Improving Phase Noise Characteristic in Phase Locked Loop

  • Han, Dae Hyun
    • Journal of Multimedia Information System
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    • v.5 no.2
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    • pp.139-142
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    • 2018
  • This work presents a novel architecture of phase locked loop (PLL) with the current compensating scheme to improve phase noise characteristic. The proposed PLL has two charge pumps (CP), main-CP (MCP) and sub-CP (SCP). The smaller SCP current with same time duration but opposite direction of UP/DN MCP current is injected to the loop filter (LF). It suppresses the voltage fluctuation of LF. The PLL has a novel voltage controlled oscillator (VCO) consisting of a voltage controlled resistor (VCR) and the three-stage ring oscillator with latch type delay cells. The VCR linearly converts voltage into current, and the latch type delay cell has short active on-time of transistors. As a result, it improves phase noise characteristic. The proposed PLL has been fabricated with $0.35{\mu}m$ 3.3 V CMOS process. Measured phase noise at 1 MHz offset is -103 dBc/Hz resulting in 3 dBc/Hz phase noise improvement compared to the conventional PLL.

A Differential Voltage-controlled Oscillator as a Single-balanced Mixer

  • Oh, Nam-Jin
    • International journal of advanced smart convergence
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    • v.10 no.1
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    • pp.12-23
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    • 2021
  • This paper proposes a low power radio frequency receiver front-end where, in a single stage, single-balanced mixer and voltage-controlled oscillator are stacked on top of low noise amplifier and re-use the dc current to reduce the power consumption. In the proposed topology, the voltage-controlled oscillator itself plays the dual role of oscillator and mixer by exploiting a series inductor-capacitor network. Using a 65 nm complementary metal oxide semiconductor technology, the proposed radio frequency front-end is designed and simulated. Oscillating at around 2.4 GHz frequency band, the voltage-controlled oscillator of the proposed radio frequency front-end achieves the phase noise of -72 dBc/Hz, -93 dBc/Hz, and -113 dBc/Hz at 10KHz, 100KHz, and 1 MHz offset frequency, respectively. The simulated voltage conversion gain is about 25 dB. The double-side band noise figure is -14.2 dB, -8.8 dB, and -7.3 dB at 100 KHz, 1 MHz and 10 MHz offset. The radio frequency front-end consumes only 96 ㎼ dc power from a 1-V supply.

High accuracy, Low Power Spread Spectrum Clock Generator to Reduce EMI for Automotive Applications

  • Lee, Dongsoo;Choi, Jinwook;Oh, Seongjin;Kim, SangYun;Lee, Kang-Yoon
    • IEIE Transactions on Smart Processing and Computing
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    • v.3 no.6
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    • pp.404-409
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    • 2014
  • This paper presents a Spread Spectrum Clock Generator (SSCG) based on Relaxation oscillator using Up/Down Counter. The current is controlled by a counter and the spread spectrum of the Relaxation Oscillator. A Relaxation Oscillator with temperature compensation using the BGR and ADC is presented. The current to determine the frequency of the Relaxation Oscillator can be controlled. The output frequency of the temperature can be compensated by adjusting the current according to the temperature using the code that is the output from the ADC and BGR. EMI Reduction of SSCG is 11 dB, and Spread down frequency is 150 kHz. The current consumption is $600{\mu}A$ from 5V and the operating frequency is from 2.3 MHz to 5.75 MHz. The rate of change of the output frequency with temperature was approximately ${\pm}1%$. The SSCG is fabricated in a 0.35um CMOS process with active area $250um{\times}440um$.

A Design and Fabrication of a 0.18μm CMOS Colpitts Type Voltage Controlled Oscillator with a Cascode Current Source (0.18μm NMOS 캐스코드 전류원 구조의 2.4GHz 콜피츠 전압제어발진기 설계 및 제작)

  • Kim, Jong-Bum;You, Chong-Ho;Choi, Hyuk-San;Hwang, In-Gab
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.12
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    • pp.2273-2277
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    • 2010
  • In this paper a 2.4GHz CMOS colpitts type microwave oscillator was designed and fabricated using H-spice and Cadence Spetre. There are 140MHz difference between the oscillation frequency and the resonance frequency of a tank circuit of the designed oscillator. The difference is seemed to be due to the parasitic component of the transistor. The inductors used in this design are the spiral inductors proposed in other papers. Cascode current source was used as a bias circuit of a oscillator and the output transistor of the current source is used as the oscillation transistor. A common drain buffer amplifier was used at the output of the oscillator. The measured oscillation frequency and output power of the oscillator are 2.173GHz and -5.53dBm.

A PVT-compensated 2.2 to 3.0 GHz Digitally Controlled Oscillator for All-Digital PLL

  • Kavala, Anil;Bae, Woorham;Kim, Sungwoo;Hong, Gi-Moon;Chi, Hankyu;Kim, Suhwan;Jeong, Deog-Kyoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.4
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    • pp.484-494
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    • 2014
  • We describe a digitally controlled oscillator (DCO) which compensates the frequency variations for process, voltage, and temperature (PVT) variations with an accuracy of ${\pm}2.6%$ at 2.5 GHz. The DCO includes an 8 phase current-controlled ring oscillator, a digitally controlled current source (DCCS), a process and temperature (PT)-counteracting voltage regulator, and a bias current generator. The DCO operates at a center frequency of 2.5 GHz with a wide tuning range of 2.2 GHz to 3.0 GHz. At 2.8 GHz, the DCO achieves a phase noise of -112 dBc/Hz at 10 MHz offset. When it is implemented in an all-digital phase-locked loop (ADPLL), the ADPLL exhibits an RMS jitter of 8.9 ps and a peak to peak jitter of 77.5 ps. The proposed DCO and ADPLL are fabricated in 65 nm CMOS technology with supply voltages of 2.5 V and 1.0 V, respectively.

A Design of 18 MHz Relaxation Oscillator with ±1 % Accuracy Based on Temperature Sensor (Temperature Sensor 기반 ±1 % 이내의 주파수 정확도를 가지는 18 MHz Relaxation Oscillator의 설계)

  • Kim, Sang Yun;Lee, Ju Ri;Lee, Dong Soo;Park, Hyung Gu;Kim, Hong Jin;Lee, Kang-Yoon
    • Journal of Korea Society of Industrial Information Systems
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    • v.18 no.5
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    • pp.39-44
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    • 2013
  • In this paper, a Relaxation Oscillator with temperature compensation using BGR and ADC is presented. The current to determine the frequency of Relaxation Oscillator can be controlled. By adjusting the current according to the temperature using the code that is output from the ADC and BGR, was to compensate the output frequency of the temperature. It is fabricated in a 0.35 ${\mu}m$ CMOS process with an active area of $240{\mu}m{\times}210{\mu}m$. Current consumption is 600 ${\mu}A$ from a 5 V and the rate of change of the output frequency with temperature shows about ${\pm}1%$.

Hartley-VCO Using Linear OTA-based Active Inductor

  • Jeong, Seong-Ryeol;Chung, Won-Sup
    • Journal of IKEEE
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    • v.19 no.4
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    • pp.465-471
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    • 2015
  • An LC-tuned sinusoidal voltage-controlled oscillator (VCO) using temperature-stable linear operational transconductance amplifiers (OTAs) is presented. Its architecture is based on Hartley oscillator configuration, where the inductor is active one realized with two OTAs and a grounded capacitor. Two diode limiters are used for limiting amplitude. A prototype oscillator built with discrete components exhibits less than 3.1% nonlinearity in its current-to-frequency transfer characteristic from 1.99 MHz to 39.14 MHz and $220ppm/^{\circ}C$ frequency stability to the temperature drift over 0 to $75^{\circ}C$. The total harmonic distortion (THD) is as low as 4.4 % for a specified frequency-tuning range. The simulated phase noise of the VCO is about -108.9 dBc/Hz at 1 MHz offset frequency in frequency range of 0.4 - 46.97 MHz and property of phase noise of VCO is better than colpitts-VCO.

A Simple Bridge Resistance Deviation-to-Frequency Converter for Intelligent Resistive Transducers (지능형 저항성 변환기를 위한 간단한 브리지 저항 편차-주파수 변환기)

  • Lee, Po;Chung, Won-Sup;Son, Sang-Hee
    • Journal of IKEEE
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    • v.12 no.3
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    • pp.167-171
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    • 2008
  • A bridge resistance deviation-to-frequency (BRD-to-F) converter is presented for interfacing resistive sensor bridges. It consists of a linear operational transconductance amplifier (LOTA), a current-controlled oscillator (CCO). The prototype converter was simulated using commercially available discrete components. The result shows that the converter has a conversion sensitivity amounting to 16.90 kHz/${\Omega}$ and a linearity error less than ${\pm}$0.03 %.

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Low Phase Noise Series-coupled VCO using Current-reuse and Armstrong Topologies

  • Ryu, Hyuk;Ha, Keum-Won;Sung, Eun-Taek;Baek, Donghyun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.42-47
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    • 2017
  • This paper proposes a new series-coupled voltage-controlled oscillator (VCO). The proposed VCO consists of four current-reuse Armstrong VCOs (CRA-VCOs) coupled by four transformers. The series-coupling, current-reuse, and Armstrong topologies improve the phase noise performance by increasing the negative-Gm of the VCO core with half the current consumption of a conventional differential VCO. The proposed VCO consumes 6.54 mW at 9.78 GHz from a 1-V supply voltage. The measured phase noise is -115.1 dBc/Hz at an offset frequency of 1 MHz, and the FoM is -186.5 dBc/Hz. The frequency tuning range is from 9.38-10.52 GHz. The core area is $0.49mm^2$ in a $0.13-{\mu}m$ CMOS process.