• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.476-480
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• 1999

PbSe thin films were grown using PLD method on the p-Si(100) substrate. To determine what crystalline structure of PbSe thin films have according to the growth temperature, the films were prepared under a substrate temperature changing between a room temperature and $400^{\circ}C$. As a result of analyzing XRD patterns of PbSe thin films prepared at various substrate temperatures and FWHM of PbSe(200) rocking curve, it was found that PbSe thin film obtained at the growth temperature of $200^{\circ}C$ was best crystallized. In addition, the surface morphology of PbSe thin film observed using AFM found itself having the most regularly arranged particles in case of growing the film at $200^{\circ}C$. The measurement of Hall effect indicated that PbSe thin films were n-type semiconductors and that current-voltage characteristic curve exhibit the typical p-n junction phenomenon. In addition, electric conductivity of PbSe thin films was found somewhat higher than that of general semiconductors.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.34-39
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• 2006

This study provides the electrical model of combustible catalytic gas sensor. Physical characteristics such as thermal behavior, resistance change were included in this model. The finite element method analysis for sensor device structure showed that the thermal behavior of sensor is expressed in a simple electrical equivalent circuit that consists of a resistor, a capacitor and a current source. This thermal equivalent circuit interfaces with real electrical circuit using two parts. One is 'power to heat' converter. The other is temperature dependent variable resistor. These parts realized with the analog behavior devices of the SPICE library. The gas response tendency was represented from the mass transferring limitation theory and the combustion theory. In this model, Gas concentration that is expressed in voltage at the model, is converted to heat and is flowed to the thermal equivalent circuit. This model is tested in several circuit simulations. The resistance change of device, the delay time due to thermal capacity, the gas responses output voltage that are calculated from SPICE simulations correspond well to real results from measuring in electrical circuits. Also good simulation result can be produced in the more complicated circuit that includes amplifier, bios circiut, buffer part.

• Journal of Sensor Science and Technology
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• v.12 no.4
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• pp.170-175
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• 2003

The korean high speed train(350km/h), composed of 7cars that are 2 power cars, 2 motorized car and 3 trailer cars, has been developed and is under on-line test. To verify the design requirements about the functions and traction performances of this train, KRRI(Korea Railroad Research Institute) decided to evaluate traction performances of the train during on-line test. For this purpose, such as torque, velocity, voltage and current, must be measured. KRRI has developed the measurement system that can be measured vast and various signals effectively. In this paper, we introduce traction performances of korean high speed train. The traction measurement items are focused on the verification of motor block performances. Motor block are consist of 2 motor. For this test, we verified traction performances of korean high speed train.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.3-8
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• 1995

n-ITO/p-PSL heterojunction photodetector have been fabricated on the Si wafer by using ITO(indium tin oxide) and PSL(porous silicon layer). They were anodized selectively by using silicon nitride and Ni-Cr/Au and were passivated by using ITO as well as being isolated by using mesa structure. With white light from 0 to 3000 Lux, the photocurrent varied linearly with incident light intensity. The reverse characteristics of fabricated devices were very stable up to a bias voltage of -40V and dark current density was about $40nA/mm^{2}$. When the device was exposed by Xe lamp whose wavelength range from 400nm to 1100nm, the maximum photo responsivity was about 0.6A/W between 600 and 700nm. Variation of the characteristics of fabricated devices after 5 weeks was negligible.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.64-71
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• 1995

We have developed a silicon etching method by which highly doped layers are selectively etched using stain etching technique. Current supply to the backside contact of silicon wafer and special reactor are not required in this method. Therefore this method is much simpler than anodic reaction method and could be applied to standard VLSI process. In addition, highly doped layers of several wafer structures, including the structures where conventional anodic reaction method cannot be used, could be preferentially etched by this technique. We have also fabricated micromechanical structures such as cantilevers and air-bridges on the $n/n^{+}/n$ wafer and air-bridges on the $p/p^{+}$ wafer using this stain etching technique.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.97-102
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• 1998

Organic thin film EL devices using PPV(poly (p-phenylenevinylene)) as emitter were fabricated on various conditions and structures, their electro-optical properties were estimated. Fabricated EL devices had structures of single layer(ITO(indium tin oxide)/PPV/Mg), double layer(ITO/PVK(poly(N-vinylcarbazole))/PPV/Mg and ITO/PPV/Polymer matrix + PBD/Mg) and three layer (ITO/PVK/PPV/PS(polystyrene)+PBD(butyl-2-(4-bipheny])-5-(4-tert-butylphenyl-1,3,4-oxadiazole))/Mg), their electro-optical characteristics were compared with each other. In structure of double layer (ITO/PPV /Polymer matrix + PBD/Mg), the used polymer-matrices were PMMA(poly(methyl methacrylate), PC(polycarbonate), PS and MCH(side chain liquid crystalline homopolymer). When PS as a hole transport layer was used, the luminance characteristics on concentration of PBD was obtained. In results, current-voltage-luminance curves of fabricated devices had characteristics of tunneling effect and the device showed a stable light emitting.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.177-183
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• 1999

A Polymer material, PU-BCN and a low molar mass material D-BCN with the same chromophore were evaluated by fabricating various electroluminescent(EL) devices. A molecular structure of the chromophore was composed as two cyano groups for electron-injection and transport and two triphenylamine groups for hole-injection and transport. Various kinds of EL devices with two different types of EL materials, PU-BCN and D-BCN were fabricated, which were an Indium-tin oxide(ITO)/PU-BCN or D-BCN/MgAg device as a single-layer device(SL) and an ITO/PU-BCN or D-BCN/oxadiazole ferivative/MgAg as a double-layer device(DL-E) and an ITO/triphenylamine derivative/D-BCN/MgAg as a double-layer device(DL-H) device. Two kinds of materials, PU-BCN and D-BCN showed the same emission characteristics in the high current density and excellent EL characteristics even in the SL devices. Maximum EL peaks revealed red emission of about 640 nm, which were corresponded with the fluorescence peaks of the films of two materials.

• Korean Journal of Geomatics
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• v.1 no.1
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• pp.1-5
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• 2001

This paper presents an investigation into the operational comparison of SPOT triangulation to build GCP library by analytical plotter and DPW (digital photogrammetric workstation). GCP database derived from current SPOT images can be used to other image sensors of satellite, if any reasons, such as lack of topographic maps or GCPs. But, general formulation of a photogrammetric process for GCP measurement has to take care of the scene interpretation problem. There are two classical methods depending on whether an analytical plotter or DPW is being used. Regardless of the method used, the measurement of GCPs is the weakest point in the automation of photogrammetric orientation procedures. To make an operational comparison, five models of SPOT panchromatic images (level 1A) and negative films (level 1AP) were used. Ten images and film products were used for the five GRS areas. Photogrammetric measurements were carried out in a manual mode on P2 analytical plotter and LH Systems DPW770. We presented an approach for exterior orientation of SPOT images, which was based on the use of approximately eighty national geodetic control points as GCPs which located on the summit of the mountain. Using sixteen well-spaced geodetic control points per model, all segments consistently showed RMS error just below the pixel at the check points in analytical instrument. In the case of DPW, half of the ground controls could not found or distinguished exactly when we displayed the image on the computer monitor. Experiment results showed that the RMS errors with DPW test was fluctuated case by case. And the magnitudes of the errors were reached more than three pixels due to the lack of image interpretation capability. It showed that the geodetic control points is not suitable as the ground control points in DPW for modeling the SPOT image.

• Korean Chemical Engineering Research
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• v.50 no.1
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• pp.72-75
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• 2012

In our experiments, strain-free nanowires(NWs) were dispersed on to the substrate, followed by e-beam lithography(EBL) to fabricate single nanowire ultraviolet(UV) sensor devices. Focused-ion beam(FIB), micro-Raman spectroscopy and photoluminescence were employed to characterize the structural and optical properties of AlGaN/GaN NWs. Also, I-V characteristics were obtained under both dark condition and UV lamp to demonstrate AlGaN/GaN NW-based UV sensors. The conductance of a single AlGaN/GaN UV sensor was 9.0 ${\mu}S$(under dark condition) and 9.5 ${\mu}S$ (under UV lamp), respectively. The currents were enhanced by excess carriers under UV lamp. Fast saturation and decay time were demonstrated by the cycled processes between UV lamp and dark condition. Therefore, we believe that AlGaN/GaN NWs have a great potential for UV sensor applications.

• Nuclear Engineering and Technology
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• v.48 no.5
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• pp.1083-1095
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• 2016

The design of Prototype Gen-IV Sodium-Cooled Fast Reactor (PGSFR) has been developed and the validation and verification (V&V) activities to demonstrate the system performance and safety are in progress. In this paper, the current status of test activities is described briefly and significant results are discussed. The large-scale sodium thermal-hydraulic test program, Sodium Test Loop for Safety Simulation and Assessment-1 (STELLA-1), produced satisfactory results, which were used for the computer codes V&V, and the performance test results of the model pump in sodiumshowed good agreement with those in water. The second phase of the STELLA program with the integral effect tests facility, STELLA-2, is in the detailed design stage of the design process. The sodium thermal-hydraulic experiment loop for finned-tube sodium-to-air heat exchanger performance test, the intermediate heat exchanger test facility, and the test facility for the reactor flow distribution are underway. Flow characteristics test in subchannels of a wire-wrapped rod bundle has been carried out for safety analysis in the core and the dynamic characteristic test of upper internal structure has been performed for the seismic analysis model for the PGSFR. The performance tests for control rod assemblies (CRAs) have been conducted for control rod drive mechanism driving parts and drop tests of the CRA under scram condition were performed. Finally, three types of inspection sensors under development for the safe operation of the PGSFR were explained with significant results.