• 제목/요약/키워드: Current pulse

검색결과 1,866건 처리시간 0.029초

Effect of Pulse and Pulse-Reverse Current on Surface Morphology and Resistivity of Electrodeposited Copper (정펄스 및 역펄스 방법을 이용하여 구리 전해도금 시 전착층의 표면 형상과 고유저항에 미치는 효과)

  • Woo, Tae-Gyu;Park, Il-Song;Seol, Kyeong-Won
    • Korean Journal of Materials Research
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    • 제17권1호
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    • pp.56-59
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    • 2007
  • Recently, requirement for the ultra thin copper foil increases with smaller and miniaturized electronic components. In this study, we evaluated the surface morphology, crystal phase ana surface roughness of the copper film electrodeposited by pulse method without using additives. Homogeneous and dense copper crystals were formed on the titanium substrate, and the optimum condition was 25% duty cycle. Moreover, the surface roughness(Ra), $0.295{\mu}m$, is the smallest value in this condition. It is thought that this copper foil is good for electromigration inhibition due to the preferential crystal growth of Cu (111)

A Zigzag Connected Auto-Transformer Based 24-Pulse AC-DC Converter

  • Singh, Bhim;Gairola, Sanjay
    • Journal of Electrical Engineering and Technology
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    • 제3권2호
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    • pp.235-242
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    • 2008
  • In this paper, a 24-pulse AC-DC converter is designed, modeled, simulated, and developed to feed non-isolated varying loads. The proposed AC-DC converter configuration consists of an auto-transformer based on zigzag connection to overcome current harmonic problems in AC mains. It improves power quality at AC mains and it meets IEEE-519 standard requirements at varying loads. A set of power quality indices on input AC mains and on DC buses for a load fed from 6-pulse and 12-pulse AC-DC converters is also given to compare their performance. It is observed that input current total harmonic distortion(THD) of less than 8% is possible with the proposed topology of AC-DC converter at varying loads.

Repetitive Over-current Characteristics of YBCO Coated Conductor for Applying to SFCL (초전도한류기에 적용하는 YBCO 박막형 선재의 반복적 과전류 특성)

  • Ahn, Min-Cheol;Seok, Bok-Yeol;Ko, Tae-Kuk
    • Progress in Superconductivity and Cryogenics
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    • 제9권3호
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    • pp.26-31
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    • 2007
  • In recent years. YBCO coated conductor (CC) called as second generation HTS (high temperature superconducting) wire has been developed as a suitable material for resistive superconducting fault current limiter (SFCL). For designing the SFCL. the required length of superconducting wire is inverse proportional to the maximum temperature reached when a fault occurs. Since the required length strongly affects a manufacturing cost, it is the most important parameter to determine the maximum temperature reached. It is necessary to observe the repetitive over-current characteristics of HTS wire. This paper attempts to measure the variation of critical current of YBCO CC after repetitive over-current pulse. No degradation of the critical current of CC sample was observed by applying 100 times over-current pulse which makes temperature above 400 K after 100ms. This study can be useful in designing optimally resistive SFCL employing YBCO CC. The maximum permissible temperature can be set to 400K. so wire length could be reduced by 30% compared in case of 300K-criterion.

Development of high repetition rate and high power pulsed Nd:YAG laser power supply using ZCS resonant converter (ZCS공진형 컨버터를 적용한 고반복 대출력 펄스형 Nd:YAG 레이저 전원장치 개발)

  • Joe, K.Y.;Kim, E.S.;Byun, Y.B.;Kim, H.J.;Park, J.M.;Lee, H.W.
    • Proceedings of the KIEE Conference
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    • 대한전기학회 1996년도 하계학술대회 논문집 A
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    • pp.514-517
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    • 1996
  • Zero current switching(ZCS) series resonant converter is used to control laser power density in a pulsed Nd:YAG laser power supply. The high power and high repetition rate paused Nd:YAG laser is designed and fabricated to control current pulse width and pulse repetition rate in the double elliptical laser oscillator. In order to find out operational characteristics of pulsed Nd:YAG laser, the electrical properties of driving power supply and laser output power are investigated and experimented by changing of the current pulse width from 200uS to 350uS(step 50uS) and pulse repetition rate range of 500pps(pulse per second) to 1150pps. From that result, we obtaind maximum efficiency of 1.83% and maximum laser output or 220W at the condition of 350 uS and 1150pps with one Nd:YAG rod), and obtained that of more than 400W with two laser head connecting series.

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A Study on Processing Shape and Overcutting of Invar Sheet by Pulse Electrochemical Machining (펄스전해가공을 이용한 인바 박판의 가공 형상 및 Overcutting 현상에 관한 연구)

  • Yang, Bu-Yeol;Kim, Seong-Hyun;Choi, Seung-Geon;Choi, Woong-Hirl;Chun, Kwang-Ho;Lee, Eun-Sang
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • 제24권3호
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    • pp.314-319
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    • 2015
  • Invar is a compound metal of Fe-Ni system contained 36.5% Ni. The characteristic of invar is that the coefficient of thermal expansion is $1.0{\times}10^{-6}cm/^{\circ}C$. It is approximately 10 times smaller than series of steel. Because of this low thermal expansion characteristic of Invar, it is used to shadow mask of display device such as UHDTV or OLED TV. In this study, pulse current from pulse generator instead of DC current is used to overcome the disadvantages of the conventional electrochemical machining. Pulsed current with different duty factor in PECM affect the precise geometry. Pulse electrochemical machining is conducted to machine the micro hole to the invar sheet with different duty factor. The machined shape and overcut of invar sheet with different duty factor is observed by optical microscope and scanning electron microscope (SEM).

Hardware implementation of a pulse-type neuron chain with a synapse function for hodgkin-huxley model (호지킨-헉슬리 모델을 위한 시냅스 기능을 지닌 신경세포 체인의 하드웨어 구현)

  • Jung, Jin-Woo;Kwon, Bo-Min;Park, Ju-Hong;Kim, Jin-Su;Lee, Je-Won;Park, Yong-Su;Song, Han-Jung
    • Journal of Sensor Science and Technology
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    • 제18권2호
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    • pp.128-134
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    • 2009
  • Integrated circuit of a new neuron chain with a synapse function for Hodgkin-Huxley model which is a good electrical model about a real biological neuron is implemented in a $0.5{\mu}m$ 1 poly 2 metal CMOS technology. Pulse type neuron chain consist of series connected current controlled single neurons through synapses. For the realization of the single neuron, a pair of voltage mode oscillators using operational transconductance amplifiers and capacitors is used. The synapse block which is a connection element between neurons consist of a voltage-current conversion circuit using current mirror. SPICE simulation results of the proposed circuit show 160 mV amplitude pulse output and propagation of the signal through synapses. Measurements of the fabricated pulse type neuron chip in condition of ${\pm}2.5\;V$ power supply are shown and compared with the simulated results.

A Study on the Electrochemical Micro-machining for Fabrication of Micro Grooves (미세 홈 형성을 위한 마이크로 전해가공에 관한 연구)

  • Park, Jeong-Woo;Lee, Eun-Sang;Moon, Young-Hun
    • Journal of the Korean Society for Precision Engineering
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    • 제19권4호
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    • pp.101-108
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    • 2002
  • A specially-built EMM (Electrochemical Micro Machining) / PECM (Pulse Electrochemical Machining) cell, a electrode tool filled with non-conducting material, a electrolyte flow control system and a small & stable gap control unit are developed to achieve accurate dimensions of recesses. Two electrolytes, aqueous sodium nitrate and aqueous sodium chloridc arc applied in this study. The farmer electrolyte has better machine-ability than the latter one because of its appropriate changing to the transpassive state without pits on the surface of workpiece. It is easier to control the machining depth precisely by micrometer with pulse current than direct current. This paper also presents an identification method for the machining depth by in-process analysis of machining current and inter electrode gap size. The inter electrode gap characteristics, inc1uding pulse current, effective volumetric electrochemical equivalent and electrolyte conductivity variations, are analyzed based on the model and experiments.

The Effect of Application Parameter of Pulsed Direct Current on Wound Healing of Patients with Pressure Ulcer

  • Kim, Ga Yeong;Lee, Sang Bin;Moon, Ok Kon;Kim, Ji Sung;Choi, Jung Hyun;Wang, Jung San;Park, Joo Hyun;Kim, Hong Rae;Lee, Ju Hwan;Min, Kyung Ok
    • Journal of International Academy of Physical Therapy Research
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    • 제5권2호
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    • pp.752-756
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    • 2014
  • This study investigated the effects of changes to the pulsation factor of pulsed direct currents on wound healing. Patients with a pressure ulcer at a care hospital for the elderly were randomly divided into three groups: Group 1 involved the application of $100{\mu}s$ in pulse duration, 10 ms in pulse period, 100 pps in a pulsation factor, 15 mA in pulse amplitude, and polarity red+ by using pulsed direct currents; Group 2 involved a change of pulse period to 8 ms; and Group 3 received general wound management. Although there were no statistically significant differences in the changing stages of pressure ulcers among the groups, all the groups dropped in numerical stages. In the two groups to which pulsed direct currents were applied, there was a statistically significant reduction in the stages of pressure ulcers from the initial assessment to the 12-week assessment (p<.05). Even though there were no statistically significant differences in changes to the area of pressure ulcers among the groups, a statistically significant decrease was found in pulsed direct current group 2 whose pulse period was shortened (p<.05). There was no difference in the healing rate of pressure ulcers among the groups, but it made a numerical increase in pulsed direct current group 1 and group 2 and a numerical decrease in group 3. There were no significant differences in the characteristics of those who had a full recovery among the groups. Those findings indicate that pulsed direct currents have positive effects on the wound healing of patients with a pressure ulcer and that a treatment with pulsed direct currents whose pulsation factor is raised by reducing the pulse duration is especially effective.

The Effect of High Current Pulse against Shaped Charge Jet by Flash X-Ray and Residual Penetration Depth (섬광 X선과 잔류관통깊이 분석을 통한 성형작약탄 제트에 대한 펄스전류 효과)

  • Joo, Jaehyun;Choi, Joonhong;Kim, Dongkyu;Kim, Siwoo;Kim, Jeongtae
    • Journal of the Korea Institute of Military Science and Technology
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    • 제18권5호
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    • pp.574-581
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    • 2015
  • In this paper, the effect of high voltage current pulse against shaped charge jet was analyzed through the visualization of jet behavior using flash X-ray and comparison of depth of penetration(DOP) into RHA(Rolled Homogeneous Armor) witness plates. The behavior of jet particles has been acquired using a flash X-ray equipment when current pulse was applied into the metal jet of a shaped charge(SC) warhead. Typical results such as jet breakup and radial jet dispersion, which are due to electromagnetic pressure by current pulse, have been obtained. Dozens of penetration experiments using a shaped charge with 55 mm diameter were performed according to various combinations of major parametric variables such as electrode spacing, standoff distance from SC warhead to electrode, and charge voltage. Subsequently, interrelations between major parametric variables and DOPs into RHA were analyzed.

A Study on Destruction Characteristics of BJT (Bipolar Junction Transistor) at Different Pulse Repetition Rate (다양한 펄스 반복률에서의 NPN BJT (Bipolar Junction Transistor)의 파괴 특성에 관한 연구)

  • Bang, Jeong-Ju;Huh, Chang-Su;Lee, Jong-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • 제27권3호
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    • pp.167-171
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    • 2014
  • This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525~575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. Pulse Repetition rate is high, level of transistor destruction is more serious.