• Title/Summary/Keyword: Current gain

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IPI feeding structure for the gain improvement of IFA (IFA 이득 향상을 위한 IPI 급전 구조)

  • Oh, Kyu-Jong;Son, Tae-Ho
    • Journal of Advanced Navigation Technology
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    • v.14 no.6
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    • pp.817-823
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    • 2010
  • Design of IPI feeding structure affecting the antenna gain improvement of mobile phone was investigated. IPI feeder which based on the T matching theory increase line current for internal antenna such as IFA. So IPI feeder makes higher radiation resistance, and also increases the gain with increasing radiation efficiency. To verify IPI feeding effect, feeder is applied to conventional CDMA/DCS dual band IFA. Measurement shows that IPI-IFA has 0.5 ~ 1.4[dBi] higher gain than conventional IFA at CDMA/DCS band. Resonant frequency did not change.

A High Voltage CMOS Rail-to-Rail Input/Output Operational Amplifier with Gain enhancement (전압 이득 향상을 위한 고전압 CMOS Rail-to-Rail 입/출력 OP-AMP 설계)

  • An, Chang-Ho;Lee, Seung-Kwon;Jun, Young-Hyun;Kong, Bai-Sun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.10
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    • pp.61-66
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    • 2007
  • A gain enhancement rail-to-rail buffer amplifier for liquid crystal display (LCD) source driver is proposed. An op-amp with extremely high gain is needed to decrease the offset voltage of the buffer amplifier. Cascoded floating current source and class-AB control block in the op-amp achieve a high voltage gain by reducing the channel length modulation effect in high voltage technologies. HSPICE simulation in $1\;{\mu}V$ 15 V CMOS process demonstrates that voltage gain is increased by 30 dB. The offset voltage is improved from 6.84 mV to $400\;{\mu}V$. Proposed op-amp is fabricated in an LCD source driver IC and overall system offset voltage is decreased by 2 mV.

Simulation and Examination for DFB Lasers with Grating Phase of π/2 on One Mirror Face (한쪽 거울면의 격자 위상이 π/2인 DFB 레이저의 시뮬레이션과 검정)

  • Kwon, Kee-Young
    • Journal of Software Assessment and Valuation
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    • v.15 no.2
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    • pp.101-109
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    • 2019
  • Lasers for optical broadband communication systems should have excellent frequency selectivity and modal stability. DFB(Distributed Feedback) lasers have low lasing frequency shift during high speed current modulation. In this paper, I have developed a simulation software and analysed threshold gain and lasing frequency of a lasing mode in longitudinal direction of an 1.55um DFB laser with two mirrors and without anti-reflection coatings, that have both an index- and gain-gratings. The grating phase on a left mirror face is fixed as π/2 and the grating phase on a right mirror face is varied. As the phases of the index and gain gratings on the right mirror facet are π and 0, κL should be in the range of 2~6 in order to enhance the frequency stability. In order to reduce the threshold current of a lasing mode, κL should be greater than 8, regardless of the grating phases on the mirror faces.

The Mechanisms of Atypical Antipsychotics-Induced Weight Gain and Related Pharmacogenetics (비전형적 항정신병약물에 의한 체중증가의 기전 및 약리유전학)

  • Lee, Joon-Noh;Yang, Byung-Hwan
    • Korean Journal of Biological Psychiatry
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    • v.10 no.1
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    • pp.3-19
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    • 2003
  • The use of atypical antipsychotics is limited by occurrence of adverse reactions such as weight gain, despite of their benefits. This article provides a comprehensive review and discussion of the most significant findings regarding obesity-related pathways and integrates these with the known mechanism of atypical antipsychotic action. The focus of this article is primarily on the genetics of obesity related pathways that may be disrupted by atypical antipsychotics. This review also discussed weight gain, hyperglycemia or occurrence of diabetes while being treated with atypical antipsychotics from the point of view of pharmacogenetics. Pharmacogenetic research seeks to uncover genetic factors that will help clinicians identify the best treatment strategies for their patients. It will aid clinically in the prediction of response and side effects, such as antipsychotic-induced weight gain, and minimize the current "trial and error" approach to prescribing in the near future. This article also presents the genetics of both central and peripheral pathways putatively involved in antipsychotic-induced weight gain while providing a comprehensive review of the obesity literature. This article also review obesity related candidate molecules which may be disrupted during atypical antipsychotic drug treatment.

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Improved Programmable LPF Flux Estimator with Synchronous Angular Speed Error Compensator for Sensorless Control of Induction Motors (유도 전동기 센서리스 제어를 위한 동기 각속도 오차 보상기를 갖는 향상된 Programmable LPF 자속 추정기)

  • Lee, Sang-Soo;Park, Byoung-Gun;Kim, Rae-Young;Hyun, Dong-Seok
    • The Transactions of the Korean Institute of Power Electronics
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    • v.18 no.3
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    • pp.232-239
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    • 2013
  • This paper proposes an improved stator flux estimator through ensuring conventional PLPF to act as a pure integrator for sensorless control of induction motors. Conventional PLPF uses the estimated synchronous speed as a cut-off frequency and has the gain and phase compensators. The gain and phase compensators are determined on the assumption that the estimated synchronous angular speed is coincident with the real speed. Therefore, if the synchronous angular speed is not same as the real speed, the gain and phase compensation will not be appropriate. To overcome the problem of conventional PLPF, this paper analyzes the relationship between the synchronous speed error and the phase lag error of the stator flux. Based on the analysis, this paper proposes the synchronous speed error compensation scheme. To achieve a start-up without speed sensor, the current model is used as the stator flux estimator at the standstill. When the motor starts up, the current model should be switched into the voltage model. So a stable transition between the voltage model and the current model is required. This paper proposes the simple transition method which determines the initial values of the voltage model and the current model at the transition moment. The validity of the proposed schemes is proved through the simulation results and the experimental results.

Reference white setting based on brightness of CPT and resolution (수상관의 밝기 및 해상도를 고려한 기준 백색 설정)

  • 최덕규;김주동;권기룡;안상호;이건일;송규익
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.2
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    • pp.334-343
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    • 1997
  • Reference white in color television receiver can be achieved by adjusting the RGB gun current ratio and it is necessary to provide additional gain ratio adjustment for the RGB video signal. Generally, the gun current density profile has a gaussian distribution and the gain-bandwidth product of RGB channel amplifieris constant. Therefore brightness and spatial resolution are changed with variations in reference white of receiver. In this paper, the effect of RGB gun current and channel gain ratios on brightness and resolution of CPT is analyzed. Brightness is increased with the color temperature of referenc white because of Helmholtz-kohlrausch effect. The change in ligh output is more abrupt and spatial resolution is improved with unity current ratio. For more bright and improved ressolution we also present the range of color temperature of reference white for P22 phosphors.

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High Gain and Broadband Millimeter-wave MHEMT Cascode Amplifier (고이득 및 광대역 특성의 밀리미터파 MHEMT Cascode 증폭기)

  • An, Dan;Lee, Bok-Hyung;Lim, Byeong-Ok;Lee, Mun-Kyo;Baek, Yong-Hyun;Chae, Yeon-Sik;Park, Hyung-Moo;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.8
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    • pp.105-111
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    • 2004
  • In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.

Current Sliding Mode Control with a Load Sliding Mode Observer for Permanent Magnet Synchronous Machines

  • Jin, Ningzhi;Wang, Xudong;Wu, Xiaogang
    • Journal of Power Electronics
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    • v.14 no.1
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    • pp.105-114
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    • 2014
  • The sliding mode control (SMC) strategy is applied to a permanent magnet synchronous machine vector control system in this study to improve system robustness amid parameter changes and disturbances. In view of the intrinsic chattering of SMC, a current sliding mode control method with a load sliding mode observer is proposed. In this method, a current sliding mode control law based on variable exponent reaching law is deduced to overcome the disadvantage of the regular exponent reaching law being incapable of approaching the origin. A load torque-sliding mode observer with an adaptive switching gain is introduced to observe load disturbance and increase the minimum switching gain with the increase in the range of load disturbance, which intensifies system chattering. The load disturbance observed value is then applied to the output side of the current sliding mode controller as feed-forward compensation. Simulation and experimental results show that the designed method enhances system robustness amid load disturbance and effectively alleviates system chattering.

Position and Speed Control of the BLDC Motor based on the Back-stepping(Gain design) (백스텝핑을 기반으로 하는 BLDC 전동기의 위치 및 속도제어(이득 설정))

  • Lee, Seung;Jeon, Yong-Ho;Cho, Whang
    • The Journal of the Korea institute of electronic communication sciences
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    • v.10 no.3
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    • pp.403-411
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    • 2015
  • In this paper, we propose a design method for the position and speed controller, current control of a Brushless Direct Current(BLDC) motor using back-stepping design techniques. Further, to stabilize the whole system, and proposes a method for setting the appropriate gain control to improve the tracking performance. By applying the proposed controller to 120W BLDC motors were tested for the ability to follow the position, velocity and current reference. Since the simulation results of the steady state error is within 1%, we were able to show the usefulness of the tracking performance of the proposed controller.

Fabrication and Characterization of AlGaAs/GaAs HBT (AlGaAs/GaAs HBT의 제작과 특성연구)

  • 박성호;최인훈;오응기;최성우;박문평;윤형섭;이해권;박철순;박형무
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.104-113
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    • 1994
  • We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

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