• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.359-363
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• 2011

To integrate the sensor driver and logic circuits, fabricating down scaled transistors has been main issue. At this research, short channel effects were analyzed after n channel polycrystalline silicon thin film transistor was fabricated at high temperature. As a result, on current, on/off current ratio and transconductance were increased but threshold voltage, electron mobility and s-slope were reduced with a decrease of channel length. When carriers that develop at grain boundary in activated polycrystalline silicon have no gate biased, on current was increased with punch through by drain current. Also, due to BJT effect (parallel bipolar effect) that developed under region of channel by increase of gate voltage on current was rapidly increased.

• Proceedings of the SAREK Conference
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• 2008.11a
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• pp.9-14
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• 2008

The effects of baffles in PEM fuel cell with parallel flow channel has been simulated by using conmmercial program. The simulation has been conducted through the channel and there are four different heights of baffles, No Baffle($H_b$=0), Partially Blocked Baffle(0.25, 0.5, 0.75), Fully Blocked Baffle(1) conditions. The result shows that current density changes while placing a baffle at the various positions along the channel. Current density with a single baffle is higher than that without baffle and current density using Fully Blocked Baffle(FBB) is much higher than current density using Partially Blocked Baffle(PBB). When the baffle is closer to outlet of the channel, current density increases. It is found that pressure is related to current density. If the pressure is higher, the better performance will be expected.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.270-274
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• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2173-2178
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• 2007

Dynamics of plasma sheath was analyzed using simple ion fluid model with poison equation. Incident ion current, energy, potential distribution and space charge density profile were calculated as a function of time. The effects of initial floating sheath on the evolution of biased sheath were compared with ideal matrix sheath. The effects of finite rising time of pulse bias voltage on the ion current and energy was studied. The influence of surface charging on the evolution of sheath was also investigated

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.12-16
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• 2000

In this paper, we analyze self field effects of Bi-2223 tape-stacked cable assuming constant current density in the cross section of stacked cable. Generally, the critical current of Bi-2223 tape-stacked-cable in much less than the total summation of critical currents of each tape, which is mainly due to the self magnetic fields of the cable itself. Therefore, to predict the critical current of Bi-2223 tape-stacked-cable, we needs to analyze the self filed effects on the stacked cable as well as critical current density data(J$\_$C/) of one tape. To make it more complex, the critical current degradation of Bi-2223 tape is an-isotropic; the critical current is lower in the normal magnetic field(to the tape surface) than in the parallel field. In the paper, a novel approach to predict the critical current of a Bi-2223 tape-stacked-cable from a J$\_$C/-B curve of one tape is presented with the assumption of constant current density across the stacked cable, The approach basically includes the load analysis of the stacked tapes, and its usefulness is confirmed by the experimental data.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.257-258
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• 2008

The inrush current of a transformer is a high-magnitude and harmonic-rich current generated when the transformer core is driven into saturation during energizing. The inrush current usually leads to undesirable effects, for example potential damage to the transformer, misoperation of a protective relay, and power quality deterioration in the distribution power system. Inrush current reduction is therefore important for power system operation. In this paper, to reduce the inrush current, the insertion resistance of the Superconducting Fault Current Limiter (SFCL) that is connected in series with the transformer in the distribution system is used. This paper implements the SFCL by using the Electromagnetic Transient Program-Restructured Version (EMTP-RV) to model the SFCL in the distribution system. The simulation results show the beneficial effects of the SFCL for reduction of the inrush current.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.48-48
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• 2009

Conventionally in pulsed gas metal arc welding (GMAW-P), drop transfer is analyzed with simplest square pulse waveform. While the pulse current is described by four parameters (peak current magnitude and time plus base current magnitude and time), it deviates the real pulse shape. Real pulse can be better idealized by the trapezoidal pulse waveform described by two additional parameters, i.e., current rise and fall rate (dI/dt). Power source response rate is described by these parameters. In this work, the effect of these parameters on drop transfer is predicted by the force displacement model (FDM). While peak current has significant effects on drop detachment, drop transfer is also influenced by the current rise rate. Predictions indicate that the current rise rate can have considerable effects on the size of the detached drop if other pulse parameters are kept constant. FDM is applied to determine peak time for one drop one pulse condition (ODOP) when rests of the pulse parameters are given. The predicted range of ODOP shows good agreement with experimental data.

• Asia pacific journal of information systems
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• v.34 no.1
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• pp.321-350
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• 2024

When a competent employee leaves an organization, the technical skills and know-how possessed by that employee also disappear, which may lead to various problems, such as a decrease in organizational morale and technology leakage. To address such problems, it is important to increase employees' job satisfaction. Due to the advancement of both information and communication technology and social media, many former and current employees share information regarding companies in which they have worked or for which they currently work via job portal websites. In this study, a web crawl was used to collect reviews and job satisfaction ratings written by all and incumbent employees working in nine industries from Job Planet, a Korean job portal site. According to this analysis, regardless of the industry in question, organizational culture, welfare support, work system, growth capability and relationships had significant positive effects on job satisfaction, while time and attendance management, performance management, and organizational flexibility had significant negative effects on job satisfaction. With respect to the path difference between former and current employees, time and attendance management and organizational flexibility have greater negative effects on job satisfaction for current employees than for former employees. On the other hand, organizational culture, work system, and relationships had greater positive effects for current employees than for former employees.

• Proceedings of the KIEE Conference
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• 1999.11b
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• pp.375-377
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• 1999

It is necessary to obtain the high performance of the inverter system that control the output current of inverters. The dead time causes detrimental effects to the control performance of the inverter system. So we need to compensate the dead time effects. And the dead time minimization switching method can be considered as the best way to avoid the dead time effects fundamentally. In this paper, a new dead time minimization switching strategy is proposed. According to the proposed method, very short dead time is adopted in only once when the current polarity is changing. And the adopted dead time is equal to the applied dead time or shorter than it. As the proposed method can be done with the porlarity information of the reference current. it is easy to avoid some problems in comparison with the case that the real current is used to get the polarity changing time; level detection difficulty, noise problem and so on.