• 제목/요약/키워드: Cuprous oxide

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$Cu_2O$ p-형 산화물반도체 박막 ($Cu_2O$ p-type oxide-semiconductor film)

  • 송병준;이호년
    • 한국산학기술학회:학술대회논문집
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    • 한국산학기술학회 2010년도 추계학술발표논문집 1부
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    • pp.356-358
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    • 2010
  • Cuprous oxide ($Cu_2O$)를 기초로 하여 산화 박막 트랜지스터에 대하여 연구를 하였다. 일정한 두께의 cuprous oxide ($Cu_2O$) 박막을 조건별로 열처리 공정을 하고 그에 따른 변화를 측정을 하였다. 그 측정한 결과 중 가장 좋은 열처리 조건으로 열 증착 방식(Vacuum Thermal Evaporation)을 사용하여 cuprous oxide ($Cu_2O$) 비정질 산화 박막 트랜지스터를 제작 및 측정했다.

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Electrodeposited Cuprous oxide based p-n junction for photovoltaic devices with atomic layer deposited ZnO layers

  • 백승기;이기룡;조형균
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2013년도 춘계학술대회 논문집
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    • pp.181-182
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    • 2013
  • 저온 공정을 통한 저가형의 태양전지를 만들기 위해 ALD 공정 법으로 Zinc oxide의 전도성을 조절하여 전기 증착법을 통해 성장시킨 Cuprous oxide와 p-n heterojunction을 구성하고 태양전지를 제작하였을 때 최적의 효율을 확인하였다. 전도성이 낮아질수록 전착법과의 p-n junction에서의 Jsc값이 증가하여 100도의 Zinc oxide의 경우 0.13%의 태양전지 효율을 보였다.

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산화아연 나노막대가 내장된 아산화구리 박막 구조를 이용한 산화물 광양극 제작 및 광전기화학적 특성 (Fabrication and Photoelectrochemical Properties of an Oxide Photoanode with Zinc Oxide Nanorod Array Embedded in Cuprous Oxide Thin Film)

  • 민병국;김효진
    • 한국재료학회지
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    • 제29권3호
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    • pp.196-203
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    • 2019
  • We report on the fabrication and characterization of an oxide photoanode with a zinc oxide (ZnO) nanorod array embedded in cuprous oxide ($Cu_2O$) thin film, namely a $ZnO/Cu_2O$ oxide p-n heterostructure photoanode, for enhanced efficiency of visible light driven photoelectrochemical (PEC) water splitting. A vertically oriented n-type ZnO nanorod array is first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film is directly electrodeposited onto the vertically oriented ZnO nanorod array to form an oxide p-n heterostructure. The introduction of $Cu_2O$ layer produces a noticeable enhancement in the visible light absorption. From the observed PEC current density versus voltage (J-V) behavior under visible light illumination, the photoconversion efficiency of this $ZnO/Cu_2O$ p-n heterostructure photoanode is found to reach 0.39 %, which is seven times that of a pristine ZnO nanorod photoanode. In particular, a significant PEC performance is observed even at an applied bias of 0 V vs $Hg/Hg_2Cl_2$, which makes the device self-powered. The observed improvement in the PEC performance is attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential including the light absorption and separation processes of photoinduced charge carriers, which provides a new avenue for preparing efficient photoanodes for PEC water splitting.

Fabrication and Photocatalytic Properties of Visible Light Responsive Cuprous Oxide Cubes

  • Lin, Jiudong;Tao, Feifei;Sheng, Congcong;Li, Jianwei;Yu, Xiaoding
    • Bulletin of the Korean Chemical Society
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    • 제35권4호
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    • pp.1110-1116
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    • 2014
  • The cuprous oxide cubes with the special porous surface constructed by nano-prisms have been successfully fabricated by a solvothermal method. The template-free method is simple and facile without any surfactant. The X-ray powder diffraction (XRD) pattern suggests that the as-prepared product is the pure primitive cubic $Cu_2O$. The effects of the experimental parameters, such as the reaction temperature, reaction time and the concentration of sodium acetate anhydrous, on the morphologies of the products were investigated in detail by the scanning electron microscopy (SEM). Based on the time-dependent experiments, the possible formation mechanism was proposed. Using photocatalytic degrading reactive dyes as the model reaction and xenon lamp to simulate sunlight, the $Cu_2O$ cubes with the porous surface might possess higher photocatalytic activity than those of the commercial $Cu_2O$ powder in the visible-light region, indicating the excellent photocatalytic performance.

Characteristics of p-Cu2O/n-Si Heterojunction Photodiode made by Rapid Thermal Oxidation

  • Ismail, Raid A.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권1호
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    • pp.51-54
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    • 2009
  • Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

스퍼터링 공정 조건이 산화 구리 박막 특성에 미치는 영향 (Influence of Sputtering Conditions on Properties of Copper Oxide Thin Films)

  • 조재유;허재영
    • Current Photovoltaic Research
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    • 제5권1호
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    • pp.15-19
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    • 2017
  • The fossil fuel power consumption generates $CO_2$, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, $Cu_2O$ is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide ($Cu_2O$) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 nm. In addition, $Cu_2O$ has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the $Cu_2O$ thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.

A Study on the Extraction and Purification of Glutathione from Yeast

  • Kim, Seong-Ung;Yang, Choong-Ik;Min, Shin-Hong;Rhee, Sang-Hi;Kim, Yong-Bae
    • Journal of Pharmaceutical Investigation
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    • 제8권2호
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    • pp.1-10
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    • 1978
  • During the course of studies on the production of glutathione from yeast, process development and optimization was carried out. The optimal pH for the extraction of glutathione was found to be 2.5 to 4.0 and the maximum yield for glutathione was obtained when the extraction temperature was 25 to $45^{\circ}C$. The cuprous salt of glutathione was recovered maximally at the range of 2 to 4g of cuprous oxide per 10 Kg of compressed yeast. Further purification was needed for the removal of impurities from glutathione. Cation exchange resin, anion exchange resin and Sephadex G-25 were employed for this purpose. 13 to 15 g of glutathione was obtained from 10 Kg of compressed yeast and the purity was above 99.3%.

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음극전착법을 이용한 Cu2O 막의 광전기 화학적 특성 (Photoelectrochemical Characteristics for Cathodic Electrodeposited Cu2O Film on Indium Tin Oxide)

  • 이은호;정광덕;주오심;최승철
    • 한국세라믹학회지
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    • 제41권3호
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    • pp.183-189
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    • 2004
  • 음극전착법을 이용하여 전도성유리(ITO-glass)위에 Cu$_2$O 막을 제조하였다. Cu$_2$O 막의 특성을 향상시키기 위하여 전착방법, 시간, 전압, 전착 후 열처리 조건을 변화시켰다. 전착 후 열처리를 통해 얻어진 전극에 100mW/$ extrm{cm}^2$의 백색광을 조사하여 광전류밀도를 측정하고 XRD, SEM, UV-visible spectrophotometer를 통해 제조 조건변화에 따른 특성변화를 관찰하였다. 그리고 100mW/$\textrm{cm}^2$의 백색광하에서 bias 전압이 0V인 조건에서 전극의 안정성을 측정하였다 인가전압 -0.7V, 인가시간 300초 전착 조건에서 얻어진 막을 30$0^{\circ}C$에서 1시간 열처리하여 순수한 Cu$_2$O 막을 제조하였으며, 이 전극을 이용 광전류밀도를 측정한 결과 1048 $\mu$A/$\textrm{cm}^2$가 측정되었다. 또한 chemical deposition을 이용 TiO$_2$ 박막을 Cu$_2$O 막 위에 코팅하여 전극의 안정성을 향상시켰다.

전착법을 이용한 Cu2O 박막 형성 및 공정 조건에 따른 특성 변화 (Influence of Process Conditions on Properties of Cu2O Thin Films Grown by Electrodeposition)

  • 조재유;하준석;류상완;허재영
    • 마이크로전자및패키징학회지
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    • 제24권2호
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    • pp.37-41
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    • 2017
  • $Cu_2O$는 초저가 태양전지의 흡수층으로 적용될 수 있는 물질 중 하나로 direct band gap($E_g={\sim}2.1eV$)을 갖고 있으며 최대 650 nm 파장의 빛을 흡수 할 수 있는 높은 흡수율을 가지고 있다. 또한 무독성, 풍부한 매장량으로 낮은 비용 등의 여러 장점을 가지며 간단하고 저렴한 방법으로 대량으로 제작이 가능하다. 본 연구에서 Au가 증착된 $SiO_2/Si$ 기판 위에 전착법을 통해 $Cu_2O$ 박막을 제작하였다. 우리는 용액의 pH와 작업전극에 인가되는 전위, 용액의 온도와 같은 공정조건을 바꾸어주었고 최종적으로 XRD와 SEM 사진 분석을 통해 박막의 특성을 확인하였다.

Oxidation-free Cu material for printed electronics

  • 김상호
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.16.2-16.2
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    • 2009
  • Developing a low cost printing material that can replace silver for the formation of a conducting pattern is an important issue in printed electronics. We report a novel approach using a non-oxidized copper material during the printing and sintering process under ambient conditions, which was previously considered unachievable. An attempt was made to understand the conversion process of cuprous oxide nanoparticle aggregates on metallic copper crystals through chemical reduction in the solution phase. The detailed mechanism for this conversion, including the role of the surfactant and crystal growth, was examined.

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