• The Korean Journal of Ceramics
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• 제5권2호
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• pp.183-188
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• 1999

The crystallization behavior and electrical conductivity of the $CuO-Bi_2O_3-V_2O_5$ glasses with various CuO content were investigated. The glass formation regin was 0~20 mol% Bi2O3, 5~55 mol% CuO, and 30~90 mol% $V_2O_5$ with Tg=$275^{\circ}C$~$290^{\circ}C$. Among glasses with various compositions, the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass heat-treated at $358^{\circ}C$ for 8 h showed the highest conductivity of ~ at room temperature. The heat-treated glasses increased in electrical conductivity by the order of 104 compared to non heat-treated glass. The linear relationship between 1n($\sigma$T)and $T^{-1}$ indicated that electrical conduction in the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass occurred by a small polaron hopping.

• 한국자기학회지
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• 제8권2호
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• pp.62-66
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• 1998

본 논문은 자기적 특성이 우수한 Ni-Zn-Cu ferrite를 얻기 위해 Bi2O3와 V2O5를 첨가하여 90$0^{\circ}C$에서 4시간 동안 소결한 후 각각의 시편에 대해서 물리적, 자기적 특성을 조사하였다. 큐리 온도는 Ni의 첨가량이 증가할수록 240~27$0^{\circ}C$까지 거의 직선적으로 증가하였다. 첨가제로 V2O5 와 Bi2O3를 사용한 경우 저온에서 소결을 가능하게 하여 최대 자속 밀도 Bm을 2650G에서 각각 3300G, 3500G로 높일수 있었으며 보자력은 2.05~1.05Oe까지 감소하였다. 첨가제로 V2O5와 Bi2O3를 사용한 경우 모두 투자율이 증가하였다. 상대 손실 계수는 Bi2O3를 첨가한 경우 입게의 비저항을 높여, 1 MHz의 주파수 대역에서 상대 손실 계수를 측정한 결과 6.3$\times$10-5~7.84$\times$10-5의 낮은 값을 얻었다. V2O5의 경우에는 투자율은 증가하였으나 Q값이 감소하여 상대 손실 계수가 증가하였다.

• 한국재료학회지
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• 제8권12호
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• pp.1110-1114
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• 1998

CuO-Bi$_2$O$_3$-V$_2$O$_{5}$ 삼성분계 유리 시편을 열처리 시간과 온도를 달리하여 열처리 하였을 때, 열처리된 시편의 결정화 거동 및 전기전도도 특성을 조사하였다. 여러 조성의 시편들 가운데 31CuO-14Bi$_2$O$_3$-55V$_2$O$_{5}$ (mol%)의 조성을 가진 시편이 상온에서 가장 높은 전기 전도도를 나타내었고, 이 시편을 358$^{\circ}C$에서 8h동안 열처리하여 결정화 시켰을 때, 고체 전해질용으로서는 매우 높은 전기 전도도 값인 2.67$\times$$10^{-2}$ $\Omega$$^{-1}$ $cm^{-1}$ /를 나타내었다. 유리상의 시편을 열처리 하였을 때 열처리된 시편은 BiVO$_4$ 및 CuvVO$_3$결정의 형성과 성장이 이루어지면서 전기 전도도가 비열처리 시편에 비하여 $10^3$-$10^4$배 크기로 증가하였다.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• 센서학회지
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• 제32권4호
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• Transactions on Electrical and Electronic Materials
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• 제8권2호
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• pp.84-88
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• 2007

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.321-324
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• 2003

The effects of various sintering additives such as $Bi_2O_3+V_2O_5$, $BiVO_4$, $B_2O_3$, and $CuO+V_2O_5$ on the low-temperature sintering and microwave dielectric properties of $(ZnMg)TiO_3$ system were studied. Sintering was enhanced by the sintering additives and highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature of $910^{\circ}C$. $(Zn_{0.8}Mg_{0.2})TiO_3$ with 6.19 mol.%$B_2O_3$ was found to show the best sintering and microwave dielectric properties.

• 한국세라믹학회지
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• 제39권12호
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• pp.1190-1196
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• 2002

$(1-x)BiNbO_4-xCaNb_2O_6$ (0${\le}$x${\le}$1.0) 세라믹스의 조성 변화에 따른 마이크로파 유전 특성 및 적층체 특성을 연구하였다.0.25${\le}$x${\le}$0.75의 조성 범위에서 stibotantalate 구조를 갖는 $BiNbO_4$와 columbite 구조를 갖는 $CaNb_2O_6$의 혼합상으로 존재하였으며, 이차상의 형성이나 상전이는 관찰할 수 없었다. $(1-x)BiNbO_4-xCaNb_2O_6$ 세라믹스의 유전상수(K)는 조재상의 유전 특성에 크게 의존하여 Maxwell 관계식으로부터 계산된 유전체 혼합법칙으로 정량화가 가능하였다. $0.5BiNbO_4-0.5CaNb_2O_6$에 $CuV_2O_6$를 0.8 wt% 첨가하여 1000${\circ}C$에서 3시간 소결한 결과, 유전상수 26, 품질계수(Qf) 43000 GHz 및 공진주파수 온도계수(TCF) -18 ppm/${\circ}C$의 마이크로파 유전특성을 얻을 수 있었다. $0.5BiNbO_4-0.5CaNb_2O_6$ 그린쉬트(green sheet)를 850∼900${\circ}C$에서 20분간 소결하여 얻은 적층체의 X-Y 수축율 편차와 캠버 값은 $BiNbO_4$ 적층체 보다 작게 나타났다.

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.337-343
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• 2020

This study investigated the low temperature sintering with various templates of Bi-based lead-free piezoelectric ceramics. The effects of using CuO-coated Na_0.5Bi_4.5Ti₄O₁₅ templates on the sintering behavior as well as the dielectric, ferroelectric, and piezoelectric properties of Bi_1/2(Na_0.78K_0.22)_1/2TiO₃ (BNKT) ceramics have been examined. In comparison with the specimens sintered with the Na_0.5Bi_4.5Ti₄O₁₅ templates without CuO coating, those sintered with the CuO-coated Na_0.5Bi_4.5Ti₄O₁₅ templates showed larger template sizes as well as a larger electric field induced strain (S_max/E_max) of 422 pm/V after sintering at temperatures as low as 975℃. These results are promising for low-cost multilayer ceramic actuator applications.

• 한국재료학회지
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• 제21권11호
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• pp.628-633
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• 2011

Studies on lead-free piezoelectrics have been attractive as means of meeting environmental requirements. We synthesized lead-free piezoelectric $(Bi_{1/2}Na_{1/2})TiO_3-Ba(Cu_{1/3}Nb_{2/3})O_3$ (BNT-BCN) ceramics, and their dielectric, piezoelectric, and strain behavior were characterized. As BCN with a tetragonal phase was incorporated into the rhombohedral BNT lattice, the lattice constant increased. A small amount of BCN increased the density and dielectric constant forming the complete solid solution with BNT. However, BCN above 10 mol% was precipitated into a separate phase, and which was detected with XRD. In addition, EDX measurement revealed that Cu in BCN was not distributed homogeneously but was accumulated in a certain area. A lower density with a large amount of BCN was attributed to the nonsinterable property of BCN with large tetragonaliy. The dielectric constant vs the temperature change and the strain vs the electric field indicated that the ferroelectric property of BNT was diminished and paraelectric behavior was enhanced with the BCN addition. BNT-7.5BCN showed a 0.11% unimorph strain with a 9.0 kV/mm electric field with little hysteresis.