• Title/Summary/Keyword: CuO-$V_2O_5$

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The Effect of HCl Gas on Selective Catalytic Reduction of Nitrogen Oxide (질소산화물의 선택적 환원 제거시 염화수소기체가 촉매에 미치는 영향)

  • Choung, Jin-Woo;Choi, Kwang-Ho;Seong, Hee-Je;Chai, Ho-Jung;Nam, In-Sik
    • Journal of Korean Society of Environmental Engineers
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    • v.22 no.4
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    • pp.609-617
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    • 2000
  • This study is aimed at investigating an effect of HCl gas on selective reduction of NOx over a CuHM and $V_2O_5-WO_3/TiO_2$ catalyst. SCR process is the most effective method to remove NOx, but catalyst can be deactivated by the acidic gas such as HCl gas which is also included in flue gas from the incinerator. In dry condition of flue gas, the CuHM catalyst treated by HCl gas has shown higher NO removal activity than the fresh catalyst. The activity of the catalyst can be restored by treating at $500^{\circ}C$. On the contrary. $V_2O_5-WO_3/TiO_2$ catalyst is obviously deactivated by HCl and the deactivation increases in proportion to the concentration of HCl gas. The deactivated catalyst is not restored to it's original activity by heat treatment for regeneration. In wet flue gas stream, the CuHM catalyst has shown lower activity than fresh catalyst and $V_2O_5-WO_3/TiO_2$ catalyst was severely deactivated by HCl treatment. The activity loss of catalysts are mainly due to the decrease of Br$\ddot{o}$nsted acid site on the catalyst surface by $NH_3$ TPD. The change of BET surface area of CuHM catalyst after the reaction isn't observed but $V_2O_5-WO_3/TiO_2$ catalyst is observed. The amount of $Cu^{{+}{+}}$ and $V_2O_5$ is decreased after the reaction. From these results, it is expected that CuHM catalyst should be better than $V_2O_5-WO_3/TiO_2$ catalyst for its application to the incineration of flue gas.

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Photoelectrochemical Water Splitting on a Delafossite CuGaO2 Semiconductor Electrode

  • Lee, Myeongsoon;Kim, Don;Yoon, Yong Tae;Kim, Yeong Il
    • Bulletin of the Korean Chemical Society
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    • v.35 no.11
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    • pp.3261-3266
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    • 2014
  • A pellet of polycrystalline $CuGaO_2$ with a delafossite structure was prepared from $Ga_2O_3$ and CuO by high-temperature solid-state synthesis. The $CuGaO_2$ pellet was a p-type semiconductor for which the electrical conductivity, carrier density, carrier mobility and Seebeck coefficient were $5.34{\times}10^{-2}{\Omega}^{-1}cm^{-1}$, $3.5{\times}10^{20}cm^{-3}$, $9.5{\times}10^{-4}cm^2V^{-1}s^{-1}$ at room temperature, and $+360{\mu}V/K$, respectively. It also exhibited two optical transitions at about 2.7 and 3.6 eV. The photoelectrochemical properties of the $CuGaO_2$ pellet electrode were investigated in aqueous electrolyte solutions. The flat-band potential of this electrode, determined using a Mott-Schottky plot, was +0.18 V vs SCE at pH 4.8 and followed the Nernst equation with respect to pH. Under UV light illumination, a cathodic photocurrent developed, and molecular hydrogen simultaneously evolved on the surface of the electrode due to the direct reduction of water without deposition of any metal catalyst.

Low Temperature Sintering of (Bi1/2Na1/2)TiO3-SrTiO3 Ceramics and Their Ferroelectric and Piezoelectric Properties (BNT-ST 세라믹스의 저온 소결과 강유전 및 압전 특성)

  • Hyunhee Kwon;Ga Hui Hwang;Chae Il Cheon;Ki-Woong Chae
    • Journal of Sensor Science and Technology
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    • v.32 no.4
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    • pp.238-245
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    • 2023
  • 0.75(Bi1/2Na1/2)TiO3-0.25SrTiO3 (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na2CO3 or 0.5 mol% CuO and 0.25 mol% Na2CO3. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na2CO3-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d33*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na2CO3-added sample showed smaller values of the strain and d33* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na2CO3 displayed intermediate P-E and S-E hysteresis curves.

Decomposition Reaction of Methanol over Ni-Cu/SiO$_2$Catalyst (Ni-Cu/SiO$_2$촉매 상에서의 메탄올 분해 반응)

  • 박지영;문승현;윤형기;박성룡;이상남;정승용
    • Journal of Energy Engineering
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    • v.5 no.1
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    • pp.65-71
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    • 1996
  • Decomposition reaction of methanol was conducted on Ni-Cu/SiO$_2$catalysts with several variables. Variables used in this study are S.V(Space Velocity), partial pressure of methanol, reaction temperature, and composition rate of Ni-Cu. The range of S.V is 10,000-30,000h$\^$-1/, the temperature range is 150-400$^{\circ}C$ and values of Cu/(Ni+Cu) are 0, 0.25, 0.5, 0.75, and 1. Over Ni/SiO$_2$, and Ni-Cu/SiO$_2$, the conversion rate of decomposition reaction of methanol arrived at 100% with increasing of temperature. At this time the selectivity of CO on Ni/SiO$_2$, was suddenly decreased, but on Ni-Cu/SiO$_2$, it was still sustained highly. The main products of reaction were CO and H$_2$, and by-products were CO$_2$ and CH$_4$mainly.

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Properties of Thick Films Prepared with $V_2O_5$-doped Ferrite Pastes ($V_2O_5$ 도핑한 페라이트 페이스트 후막 특성)

  • 제해준;김병국;박재환;박재관
    • Korean Journal of Crystallography
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    • v.12 no.2
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    • pp.70-75
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    • 2001
  • The purpose of this study is to investigate the effect of V₂O/sub 5/ addition on physical and magnetic properties of NiCuZn ferrite for multi-layer chip inductors. NiCuZn ferrite pastes doped with 0, 0.1, 0.3 and 0.5 wt% V₂O/sub 5/ were prepared and samples of ferrite sheets were prepared by the screen printing method. They were sintered at 870, 880, 890 and 900℃, and then their physical and magnetic properties were analyzed. After sintering at 870℃, the sintered density of the ferrite sheet doped with 0.5wt% V₂O/sub 5/ showed the highest value to 5.08g/cm³due to the best densification by the liquid phase sintering, while the microstructures of ferrite sheets doped with 0.1 and 0.3 wt% V₂O/sub 5/ showed and inhibited grain growth. Irrespective of the sintering temperature, the initial permeability of ferrite sheet doped with 0.5 wt% V₂O/sub 5/ was highest and after sintering beyond 880℃, the quality factor of 0.3 wt% V₂O/sub 5/-doped sample appeared to be highest.

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Geochemical Dispersion and Enrichment of Fluvial Sediments Depending on the Particla Size Distribution (입도분포에 따른 하상퇴적물의 지구화학적 분산 및 부화)

  • 이현구
    • Economic and Environmental Geology
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    • v.32 no.3
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    • pp.247-260
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    • 1999
  • Geochermical characteristics of the fluvial sediments deprnding on particle size distribution size were investigated in the respect of majir, minor and rare eath element chemisitry. Ratios of $Al_{2}O_{3}/Na_{2}O$ and $K_{2}O/Na_{2}O$ of the sediments show the homogeneous valus, and partly positive correlation with $SiO_{2}/Al_{2}O_{3}$, respecively. Characteristics of minor element ratios (V/Ni, Cr/V, Ni/Co and Zr/Hf)are within the lower and narrow range. Thesesuggested that sediment sources may be acidic to intermediate granitic rock, and may be explained by simple weathering and sedimentation. With increasing SiO2 contents, concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, CaO and MgO decreased, but those of $K_{2}O$ and $Na_{2}O$ increased, Concentrations of Ba, Be, Cs, Cu, Li, Ni, Sr, V and Zr show comparatively normal negative and some positive trends. Compared with the mean composition of granite, concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, MnO, CaO and MgO in the sediments of the study area were highly enriced. Among some minor and rare earth elements, concentrations of As, Cd, Cu, and V were enriched, but those of Be, Ce, Rb, Sc, Sr and Zn were depleted when compared with average composition of granite. By decreasing of particle size fractions, SiO2, Rb and Sr conterts decreased, but concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, CaO, MgO, $TiO_{2}$, MgO, $P_{2}O_{5}$, Be, Cu, Hf, Pb, V and Zr increased. From the correlations between particle size fractions and element concenreations, some elements of $Fe_{2}O_{3}$, CaO, MgO, $P_{2}O_{5}$, Cu, Ni, Zn and Zr showed typical trends in the secondary contramination sediments. These trends are typically shown under 100 mesh fractions. It indicates that the fraction of minus 100 mesh is the optimum size fraction for geochemical and environmental survey.

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Self-Assembly of Vanadium Borophosphate Cluster Anions: Synthesis and Structures of (NH4)(C2H10N2)5.5[Cu(C2H8N2)2]3[V2P2BO12]6·17H2O and (NH4)(C2H10N2)3.5[Cu(C2H8N2)2]5[V2P2BO12]6·18H2O

  • Jung, Kyung-Na;Cho, Yoon-Suk;Yun, Ho-Seop;Do, Jung-Hwan
    • Bulletin of the Korean Chemical Society
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    • v.26 no.8
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    • pp.1185-1189
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    • 2005
  • Two new copper vanadium borophosphate compounds, $(NH_4)(C_2H_{10}N_2)_{5.5}[Cu(C_2H_8N_2)_2]_3[V_2P_2BO_{12}]_6{\cdot}17H_2O,\;Cu-VBPO1\;and\;(NH_4)(C_2H_{10}N_2)_{3.5}[Cu(C_2H_8N_2)_2]_5[V_2P_2BO_{12}]_6{\cdot}18H_2O$, Cu-VBPO2 have been hydrothermally synthesized and characterized by single crystal X-ray diffraction, thermogravimetric analysis, IR spectroscopy, and elemental analysis. The structure of Cu-VBPO1 contains a layer anion, {$[Cu(C_2H_8N_2)_2]_3[V_2P_2BO_{12}]_6$}$^{12-}$, whereas Cu-VBPO2 has an open framework anion, {$[Cu(C_2H_8N_2)_2]_5[V_2P_2BO_{12}]_6$}$^{8-}$. Crystal Data: $(NH_4)(C_2H_{10}N_2)_{5.5}[Cu(C_2H_8N_2)_2]_3[V_2P_2BO_{12}]_6{\cdot}17H_2O$, monoclinic, space group I2/m (no. 12), $\alpha$ = 15.809(1) $\AA$, b = 31.107(2) $\AA$, c = 12.9343(8) $\AA$, $\beta$ = 104.325(1)$^{\circ}$, Z = 2; $(NH_4)(C_2H_{10}N_2)_{3.5}[Cu(C_2H_8N_2)_2]_5[V_2P_2BO_{12}]_6{\cdot}18H_2O$, tetragonal, space group $P4_2$/mnm (no.136), $\alpha$ = 26.832(1) $\AA$, c = 18.021(1) $\AA$, Z = 4.

A Dry-patterned Cu(Mg) Alloy Film as a Gate Electrode in a Thin Film Transistor Liquid Crystal Displays (TFT- LCDs) (TFT-LCDs 게이트 전극에 적용한 Cu(Mg) 합금 박막의 건식식각)

  • Yang Heejung;Lee Jaegab
    • Korean Journal of Materials Research
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    • v.14 no.1
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    • pp.46-51
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    • 2004
  • The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

UV/O3 Process Time Effect on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistor (UV/O3 조사 시간에 따른 Sol-gel 공정 기반 CuO 박막 트랜지스터의 전기적 특성 변화)

  • Lee, Sojeong;Jang, Bongho;Kim, Taegyun;Lee, Won-Yong;Jang, Jaewon
    • Journal of IKEEE
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    • v.22 no.1
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    • pp.1-5
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    • 2018
  • In this research, sol-gel processed CuO p-type thin film transistors were fabricated with copper (II) acetate monohydrate precursors. After $500^{\circ}C$ annealing process, the deposited thin films were fully converted into CuO. We investigated $UV/O_3$ process time effect on electrical characteristics of sol-gel processed CuO thin film transistors. After 600 sec $UV/O_3$ process, the fabricated CuO thin film transistor delivered field effect mobility in saturation regime of $5{\times}10^{-3}\;cm^2/V{\cdot}s$ and on/off current ratio of ${\sim}10^2$.