• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.304-304
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• 2006

기계적 에너지를 전지적 에너지로 변환하는 에너지 변환소자인 압전 세라믹스는 액츄에이터, 변압기, 초음파모터, 초음파 소자 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 종가하고 있다. 최근 이러한 에너지변환 소자를 앞으로 도래하는 유비쿼터스 무선 모바일 시대의 휴대용 전자제품, 즉 Wearable 컴퓨터, MP3, GSM, Bluetooth 등의 정보통신기기, Robotics, 항공우주, 자동차, 의료, 건축, MEMS 분야 등의 대체 에너지원으로 응용하기 위한 연구가 진행되고 있다. 특히 인간의 동작등과 같은 일상적인 동작(Typing, U. limbbing, Breathing, Walking 등)으로 필요한 전력을 얻을 수 있고, 세라믹 소자를 이용하기 때문에 전자노이즈가 발생되지 않을 뿐 아니라 반영구적으로 사용할 수가 있어서, 기존 이차전지, 연료전지를 대체 또는 보완 할 수 있는 방안도 검토되고 있다. 따라서 본 연구에서는 향후 응용 가능성이 큰 압전 발전 시스템을 제작하기 위해서 압전특성이 우수한 조성시스템 설계, 바이몰프 형태의 압전액츄에이터 제작, 그리고 발전시스템의 회로설계를 수행하였다.

• 공업화학
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• 제23권6호
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• pp.554-560
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• 2012

전자 통신 산업이 발달하면서 도전성 재료의 사용이 증가하게 되었다. 그에 따라 주로 사용되어오던 귀금속들을 대신할 저렴한 재료들이 필요하게 되었다. 그 중 구리는 귀금속에 비해 값이 저렴하고, 유사한 열 전기적 특성을 가졌지만 대기 중에서 쉽게 산화가 되는 문제점이 있다. 산화를 방지하기 위해서는 제조공정이 복잡해져 사용에 제한이 되어왔다. 구리의 산화 방지를 위한 방법 중 하나로 산화에 강한 금속을 Core-Shell 구조로 도금시켜 고유의 특성을 유지하며 산화를 방지하는 방법이 있다. 본 연구에서는 무전해 도금법으로 구리분말에 주석(Sn) 도금을 했고, 도금에 영향을 주는 인자들에 대해서 연구했다. XRD, FE-SEM, FIB, 4-Point Probe 등의 분석결과 구리 표면에 치밀한 주석피막이 도금되었고, 대기 중에서 산화가 되지 않았다. 분석결과를 바탕으로 최적의 도금 조건을 도출했고, 추가적으로, 도전성 필러 응용 가능성에 대한 실험을 했다. 합성된 분말을 pellet 형태로 압분 성형한 후 저온 열처리 전과 후의 변화를 분석했다. 그 결과 저온 치밀화를 통해 용융된 주석이 구리 입자들을 상호연결 시켰고, 전기 전도가 향상되었다.

• 헤리티지:역사와 과학
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• 제51권4호
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• pp.224-233
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• 2018

충주 호암동유적 및 부여 청송리유적 출토 청동기 33점의 분석을 통해 초기철기시대 청동기의 제작기술과 납의 산지를 연구하였다. 휴대용X선형광분석기를 이용한 비파괴 성분분석 결과 출토된 청동기 33점은 인위적으로 납을 첨가한 구리(Cu), 주석(Sn), 납(Pb)의 3원계 합금으로 판단된다. 4점의 청동기(동경 2점, 동검 1점, 동모 1점)의 전자탐침미소분석기를 이용한 성분분석 결과 충주 및 부여 출토 동경은 30%의 주석(Sn)과 10% 미만의 납이 포함된 고주석청동기로 확인되었으며 동모와 동검에서는 20% 내외의 주석과 5%의 납(Pb)이 검출되었다. 미량원소로는 철(Fe), 아연(Zn), 비소(As), 은(Ag), 니켈(Ni), 황(S) 및 코발트(Co)가 검출되었다 청동기 4점은 기능적인 면을 고려하여 합금되었으며 주석함량이 높아 주조 이후 열처리는 하지 않았다. 열이온화질량분석기를 이용한 충주와 부여 출토 청동기의 납동위원소비 분석을 통해 초기철기시대 청동기 33점은 Zone 1을 제외한 한반도 남부 전 지역에 걸쳐 분포함을 확인하였다. 이를 통해 충주와 부여에서 출토된 청동기는 경상도 지역의 납 원료를 사용하지 않고 한반도 내 다양한 산지의 납 원료를 사용했음을 판단하였다. 출토지가 달라 제작기술과 원료산지의 차이점이 존재할 것이라 추정하였으나 분석결과를 통해 이 시기의 청동기의 제작기술은 일반화되어 있었으며, 다양한 곳에서 다양한 산지의 원료를 이용하여 청동기를 제작하였음을 추정하였다.

• Journal of Welding and Joining
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• 제26권3호
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• pp.30-36
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• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.949-954
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• 2011

In this study, the characteristics and error ranges of the mechanical bonding strength were analyzed according to before and after thermal shock test for various chips of automotive application component using Sn-3.0Ag-0.5Cu solder. In the after thermal shock test, the mechanical bonding strengths tend to decrease, meanwhile decreasing rates of mechanical strengths were less then 12% at specimen's bonding area below 3.5$mm^2$, and were from 17 to 21% at specimen's bonding area above 12 $mm^2$. On the other hand, Specimen's mean deviation rates were about 5% at specimen's bonding area more than 12 $mm^2$. Inversely, at specimen's bonding area is less then 3.5 $mm^2$, mean deviation rates were increased to about 8%. It means that the smaller device size is, the larger mean deviation rate. In addition, error ranges and deviation rates of the mechanical bonding strengths may differ slightly depending on their bonding area. Furthermore, process conditions as well as method of mechanical reliability evaluation should be established to reduce the error ranges of bonding strength.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.178-178
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• 2016

Every display is equipped with a cover glass to protect the underneath displaying devices from mechanical and environmental impact during its use. The strengthened glass such as Gorilla glass.$^{TM}$ has been exclusively adopted as a cover glass in many displays. Conventionally, the strengthened glass has been manufactured via ion-exchange process in wet salt bath at high temperature of around $500^{\circ}C$ for hours of treatment time. During ion-exchange process, Na ions with smaller diameter are substituted with larger-diameter K ions, resulting in high compressive stress in near-surface region and making the treated glass very resistant to scratch or impact during its use. In this study, PIIID (plasma immersion ion implantation and deposition) technique was used to implant metal ions into the glass surface for strengthening. In addition, due to the plasmonic effect of the implanted metal ions, the metal-ion implanted glass samples got colored. To implant metal ions, plasma immersion ion implantation technique combined with HiPIMS method was adopted. The HiPIMS pulse voltage of up to 1.4 kV was applied to the 3" magnetron sputtering targets (Cu, Ag, Au, Al). At the same time, the sample stage with glass samples was synchronously pulse-biased via -50 kV high voltage pulse modulator. The frequency and pulse width of 100 Hz and 15 usec, respectively, were used during metal ion implantation. In addition, nitrogen ions were implanted to study the strengthening effect of gas ion implantation. The mechanical and optical properties of implanted glass samples were investigated using micro-hardness tester and UV-Vis spectrometer. The implanted ion distribution and the chemical states along depth was studied with XPS (X-ray photo-electron spectroscopy). A cross-sectional TEM study was also conducted to investigate the nature of implanted metal ions. The ion-implanted glass samples showed increased hardness of ~1.5 times at short implantation times. However, with increasing the implantation time, the surface hardness was decreased due to the accumulation of implantation damage.

• 자원리싸이클링
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• 제25권4호
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• pp.49-53
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• 2016

주석 폐자원으로부터 회수된 주석 조금속을 메탄술폰산 전해액에서 전해정련을 수행하여 고순도 주석을 회수하고자 하였다. 전해정련층 표면형상을 관찰한 결과 주석 전해정련 시 glycol계 유기첨가제를 통해 균일하게 주석이 전착되었고, 수지상 형상 및 박리현상은 발생하지 않았다. 주석 조금속 및 전해정련층의 순도를 ICP-OES로 분석한 결과 주석 조금속은 은, 구리, 납, 니켈 등의 불순물이 함유되어 97.280 wt.%의 주석순도를 나타내었고, 전해정련을 수행 후 순도 분석결과 주석의 순도는 99.956 wt.%으로 증가하였다. 순환 전압전류 시험결과 유기첨가제는 주석 전해정련 시 불순물의 환원반응을 억제 또는 가속시키는 역할을 하는 것으로 판단된다.

• Journal of Applied Biological Chemistry
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• 제44권3호
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• pp.113-118
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• 2001

Xylose (glucose) isomerase was purified to homogeneity from cell-extracts of Streptomyces chibaensis J-59 via ammonium sulfate precipitation followed by chromatography on DEAE-cellulose, and gel filtration on Sephacryl S-300. The purified enzyme is a homotetramer with a native molecular mass of 180 kDa and a subunit molecular mass of 44 kDa. The amino acid N-terminal sequence of glucose isomerase from S. chibaensis J-59 was determined to be Ser-Tyr-Gln-Pro-Thr-Pro-Glu-Asp-Arg-Phe-Thr-Phe-Gly-Leu. The first 14 amino acids of the N-terminal sequence of the enzyme showed strong analogies with N-terminal sequences of glucose isomerase produced by other Streptomyces spp. The optimum pH and temperature for activity were 7.5 and 85, respectively. The purified enzyme required $Mg^{2+}$, $Co^{2+}$, and $Mn^{2+}$ for the activity, $Mg^{2+}$ being the most effective. The enzyme was not inhibited by $Ca^{2+}$, but was inhibited by $Hg^{2+}$, $Ag^+$, and $Cu^{2+}$. The $K_m$, $V_{max}$, and $k_{cat}$ values of S. chibaensis J-59 isomerase for glucose were 83 mM, 40.9 U/mg, and $1,843min^{-1}$, respectively. In the presence of $Co^{2+}$, cell-free enzymes retained 100% without loss of activities by the heat-treatment at $70^{\circ}C$ for 7 days. The enzyme retained 50% residual activity after heating at $85^{\circ}C$ for 13.5 h, at $90^{\circ}C$ for 126 min. The enzyme is more thermostable than any other glucose isomerases of Streptomyces spp.

• 마이크로전자및패키징학회지
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• 제25권2호
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• pp.1-8
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• 2018

In the soldering industry, a variety of lead-free solders have been developed as a part of restricting lead in electronic packaging. Sn-Ag-Cu (SAC) lead-free solder is regarded as one of the most superior candidates, owing to its low melting point and high solderability as well as the mechanical property. On the other hand, the mechanical property of SAC solder is directly influenced by intermetallic compounds (IMCs) in the solder joint. Although IMCs in SAC solder play an important role in bonding solder joints and impart strength to the surrounding solder matrix, a large amount of IMCs may cause poor strength, due to their brittle nature. In other words, the mechanical properties of SAC solder are of some concern because of the formation of large and brittle IMCs. As the IMCs grow, they may cause poor device performance, resulting in the failure of the electronic device. Therefore, new solder technologies which can control the IMC growth are necessary to address these issues satisfactorily. There are an advanced nanotechnology for microstructural refinement that lead to improve mechanical properties of solder alloys with nanoparticle additions, which are defined as nano-reinforced solders. These nano-reinforced solders increase the mechanical strength of the solder due to the dispersion hardening as well as solderability of the solder. This paper introduces the nano-reinforced solders, including its principles, types, and various properties.

• 전기의세계
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• 제23권4호
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• pp.46-52
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• 1974

Generally, it has been regarded that there are two kinds of the effect of the electrodes, especially of the cathode in the gas discharge, (a) the effect caused by the difference of the cathode meterial and (b) the effect by the change of the cathode surface state even in the same meterials. Thus the two effects must be investigated independently to study the roles of the cathode in gas discharges. This paper measured sparking voltage in Rare gas (Ar, He) for the change of sparking voltage in repeating sparks and for the effect of (a) and (b) mentioned above, under the condition that the desorption of impurities from the cathod can be nigligible, and it is obtained that the correlative relations of the work function, sparking voltage and secondary coefficient are comparatively simple. In addition, the interesting character of the minimum point of the paschen's curves is found. The results were as follows; 1) The value of (pd)min with minimum pint of sparking voltage, (Vs)min, is 0.7-0.9 Torr. cm in Argon, but is 5.6-7.1 Torr. cm in Helium, and Paschen's curve in Helium shows slow curve than in Argon. 2) The minimum point of the Paschen's curve is satisfied actually Townsend's self sustaining criterion in Argon, but non-satisfaction in Helium, and the Townsend's secondary coefficient .gamma. action have compound property (.gamma.$_{i}$, .gamma.$_{p}$, .gamma.$_{m}$) in Helium. 3) The dependenting character of work function in Helium is less than in Argon. 4) The minimum point of sparking voltage increase under oxidized electrode than clear electrode in Au and Ag, but minimum point decrease in Ni and Cu.