• Title/Summary/Keyword: Cu-to-Cu bonding

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The Establishment of Bonding Conditions of Cu Using an Ultrasonic Metal Welder (초음파 금속 용착기를 이용한 Cu 박판의 용착성 실험)

  • Jang, Ho-Su;Park, Woo-Yeol;Park, Dong-Sam
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.20 no.5
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    • pp.570-575
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    • 2011
  • Ultrasonic metal welder is consisted of power supply, transducer, booster, and horn. Precise designing is required since each parts' shape, length and mass can affect driving frequency and vibration mode. This paper analyzed Cu sheet deposition characteristics using ultrasonic metal welder and tension tester. A horn suitable for 40,000Hz was attached to the ultrasonic metal welder in order to weld Cu plates. The Cu sheet welding was done with different amplitude, pressure, and welding time, and its maximum tension was measured with tension tester. Maximum tension of 153.87N was obtained when the pressure was 2.0bar, amplitude was 80%, and welding time was 0.30s. Therefore, excessive welding condition negatively influences maximum tension measurement result.

Brazing of TiAl and AISI4140 steel using an Ag-Cu-Ti insert metal (Ag-Cu-Ti삽입금속을 이용한 TiAl과 AISI4140 강의 브레이징)

  • 구자명;이원배;김명균;김대업;김영직;정승부
    • Proceedings of the KWS Conference
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    • 2004.05a
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    • pp.45-47
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    • 2004
  • We have investigated the microstructures and the mechanical properties of TiA1/Cerameti1721 (Ag-Cu-Ti insert metal)/AISI4140 joints at 800$^{\circ}C$ for 60 to 300s using induction brazing method. Two continuous reaction layers of AICuTi and AICu$_2$Ti were formed at the interface between the braze and TiAl, whose thickness increased with the brazing time. The braze consisted of Ag-rich, Ti-rich, CuTi and CuTi$_2$ phases. The maximum tensile strength achieved 296MPa, which was 71% of that of TiAl base metal, for the specimen bonded at 800$^{\circ}C$. Further increase of the brazing temperature and time resulted in constant deterioration of its bonding strength due to large amount of brittle IMC.

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Joining of AIN Ceramics to Metals: Effect of Reactions and Microstructural Developments in the Bonded Interface on the Joint Strength (질화알루미늄과 금속간 계면접합에 관한 연구: 계면반응과 미세구조 형성이 접합체 강도에 미치는 영향)

  • 박성계
    • Journal of Powder Materials
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    • v.4 no.3
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    • pp.196-204
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    • 1997
  • Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

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Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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Fabrication Technology of High Tc Superconducting Thick Films for Renewed Electric Power Energy (신 재생 에너지 저장용 초전도 세라믹 합성)

  • Lee, Sang-Heon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.1
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    • pp.128-131
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    • 2007
  • YBaCuO superconducting ceramic thick films were fabricated by chemical process. YBaCuO films have been successfully grown on $SrTiO_3$ substrates without a template layer. The films show poor or non superconductivity although they have excellent crystalline properties. ion channeling measurement made it clear that the strain in the films due to strong chemical bonding between the substrate and epilayer remains, resulting in the poor superconductivity. The X ray diffraction pattern of the YBaCuO thick films contained 90K phase. The self template method have resolved this problem. We obtained high-Jc as-grown YBaCuO on $SrTiO_3$ (100).

Enhancement of phosphate removal using copper impregnated activated carbon(GAC-Cu) (Cu(II)를 이용하여 표면개질된 활성탄의 인산염 제거효율 향상)

  • Shin, Jeongwoo;Kang, Seoyeon;An, Byungryul
    • Journal of Korean Society of Water and Wastewater
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    • v.35 no.6
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    • pp.455-463
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    • 2021
  • The adsorption process using GAC is one of the most secured methods to remove of phosphate from solution. This study was conducted by impregnating Cu(II) to GAC(GAC-Cu) to enhance phosphate adsorption for GAC. In the preparation of GAC-Cu, increasing the concentration of Cu(II) increased the phosphate uptake, confirming the effect of Cu(II) on phosphate uptake. A pH experiment was conducted at pH 4-8 to investigate the effect of the solution pH. Decrease of phosphate removal efficiency was found with increase of pH for both adsorbents, but the reduction rate of GAC-Cu slowed, indicating electrostatic interaction and coordinating bonding were simultaneously involved in phosphate removal. The adsorption was analyzed by Langmuir and Freundlich isotherm to determine the maximum phosphate uptake(qm) and adsorption mechanism. According to correlation of determination(R2), Freundlich isotherm model showed a better fit than Langmuir isotherm model. Based on the negative values of qm, Langmuir adsorption constant(b), and the value of 1/n, phosphate adsorption was shown to be unfavorable and favorable for GAC and GAC-Cu, respectively. The attempt of the linearization of each isotherm obtained very poor R2. Batch kinetic tests verified that ~30% and ~90 phosphate adsorptions were completed within 1h and 24 h, respectively. Pseudo second order(PSO) model showed more suitable than pseudo first order(PFO) because of higher R2. Regardless of type of kinetic model, GAC-Cu obtained higher constant of reaction(K) than GAC.

Conductive adhesive with transient liquid-phase sintering technology for high-power device applications

  • Eom, Yong-Sung;Jang, Keon-Soo;Son, Ji-Hye;Bae, Hyun-Cheol;Choi, Kwang-Seong
    • ETRI Journal
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    • v.41 no.6
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    • pp.820-828
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    • 2019
  • A highly reliable conductive adhesive obtained by transient liquid-phase sintering (TLPS) technologies is studied for use in high-power device packaging. TLPS involves the low-temperature reaction of a low-melting metal or alloy with a high-melting metal or alloy to form a reacted metal matrix. For a TLPS material (consisting of Ag-coated Cu, a Sn96.5-Ag3.0-Cu0.5 solder, and a volatile fluxing resin) used herein, the melting temperature of the metal matrix exceeds the bonding temperature. After bonding of the TLPS material, a unique melting peak of TLPS is observed at 356 ℃, consistent with the transient behavior of Ag3Sn + Cu6Sn5 → liquid + Cu3Sn reported by the National Institute of Standards and Technology. The TLPS material shows superior thermal conductivity as compared with other commercially available Ag pastes under the same specimen preparation conditions. In conclusion, the TLPS material can be a promising candidate for a highly reliable conductive adhesive in power device packaging because remelting of the SAC305 solder, which is widely used in conventional power modules, is not observed.

Insulated, Passivated and Adhesively-Promoted Bonding Wire using Al2O3 Nano Coating

  • Soojae Park;Eunmin Cho;Myoungsik Baek;Eulgi Min;Kyujung Choi
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.2
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    • pp.1-8
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    • 2024
  • Bonding wires are composed of conductive metals of Au, Ag & Cu with excellent electrical conductivities for transmitting power and signals to wafer chips. Wire metals do not provide electrical insulation, adhesion promoter and corrosion passivation. Adhesion between metal wires is extremely weak, which is responsible for wire cut failures during thermal cycling. Organic coating for electrical insulation does not satisfy bondability and manufacturability, and it is complex to apply very thin organic coating on metal wires. Automotive packages require enhanced reliability of packages under harsh conditions. LED and power packages are susceptible to wire cut failures. Contrary to conventional OCB behaviors, forming gas was not required for free air ball formation for both Ag and Pd-coated Cu wires with Al2O3 passivation.

Effect of Solder Structure on the In-situ Intermetallic Compounds growth Characteristics of Cu/Sn-3.5Ag Microbump (Cu/Sn-3.5Ag 미세범프 구조에 따른 실시간 금속간화합물 성장거동 분석)

  • Lee, Byeong-Rok;Park, Jong-Myeong;Ko, Young-Ki;Lee, Chang-Woo;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.3
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    • pp.45-51
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    • 2013
  • Thermal annealing tests were performed in an in-situ scanning electron microscope chamber at $130^{\circ}C$, $150^{\circ}C$, and $170^{\circ}C$ in order to investigate the effects of solder structure on the growth kinetics of intermetallic compound (IMC) in Cu/Sn-3.5Ag microbump. Cu/Sn-3.5Ag($6{\mu}m$) microbump with spreading solder structure showed $Cu_6Sn_5$ and $Cu_3Sn$ phase growths and then IMC phase transition stages with increasing annealing time. By the way, Cu/Sn-3.5Ag($4{\mu}m$) microbump without solder spreading, remaining solder was transformed to $Cu_6Sn_5$ right after bonding and had only a phase transition of $Cu_6Sn_5$ to $Cu_3Sn$ during annealing. Measured activation energies for the growth of the $Cu_3Sn$ phase during the annealing were 0.80 and 0.71eV for Cu/Sn-3.5Ag($6{\mu}m$) and Cu/Sn-3.5Ag($4{\mu}m$), respectively.

Intermetallic Compound Growth Characteristics of Cu/Ni/Au/Sn-Ag/Cu Micro-bump for 3-D IC Packages (3차원 적층 패키지를 위한 Cu/Ni/Au/Sn-Ag/Cu 미세 범프 구조의 열처리에 따른 금속간 화합물 성장 거동 분석)

  • Kim, Jun-Beom;Kim, Sung-Hyuk;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.2
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    • pp.59-64
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    • 2013
  • In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.