• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.853-856
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• 2009

Highly polycrystalline copper indium diselenide (CuInSe2, CIS) thin films were deposited on glass or ITO glass substrates by two-stage metal organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cuand In/Se-containing precursors. First, pure Cu thin film was prepared on glass or ITO glass substrates by using a single-source precursor, bis(ethylbutyrylacetate)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, on the resulting Cu films, tris(N,N-ethylbutyldiselenocarbamato)indium(III) was treated to produce CuInSe2 films by MOCVD method at 400 ${^{\circ}C}$. These precursors are very stable in ambient conditions. In our process, it was quite easy to obtain high quality CIS thin films with less impurities and uniform thickness. Also, it was found that it is easy to control the stoichiometric ratio of relevant elements on demands, leading to Cu or In rich CIS thin films. These CIS films were analyzed by XRD, SEM, EDX, and Near-IR spectroscopy. The optical band gap of the stoichiometric CIS films was about 1.06 eV, which is within an optimal range for harvesting solar radiation energy.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.137-144
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• 2021

In this study, the microstructure of the CVD-fabricated Cu(In,Ga)Se₂ (CIGSe) absorber layer by simulating the stacking sequence used in a co-evaporation method, and changes solar cell performance were investigated. The absorber layer prepared by stacking CuSe and (In,Ga)Se between InSe is separated into Ga-free CuInSe₂ and Ga-rich CIGSe, and transformed to CIGSe by selenization heat treatment with slight improvement in the the solar cell efficiency. However, in CVD, since the supply of liquid Cu-Se is not as active as in the co-evaporation method, the nanoocrystalline layer containing a large amount of Ga remained independently in the absorption layer, which acted as a cause of the loss of J_SC and FF. Therefore, by using a precursor structure in which CuGa is sputter-deposited on a single layer of InSe deposited by CVD, performance parameters of V_OC, J_SC, and FF could be greatly improved.

• Journal of Korea Foundry Society
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• v.39 no.6
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• pp.103-109
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• 2019

Cu-added SKD11 was manufactured through the casting process and the effects of Cu addition with different contents (0, 1, 2 and 3 wt%) and aging treatment on microstructure, mechanical characteristics such as tensile strength and hardness, and thermal conductivity were investigated. The microstructure was analyzed by FE-SEM and XRD, the mechanical characteristics by Rockwell hardness tester and Tensile tester, and the thermal conductivity by Laser flash. As a result, SKD11 containing Cu had higher hardness than as-received SKD11. The hardness of as-cast SKD11 containing 1 wt% Cu was 42.4 HRC, whereas the hardness of asreceived SKD11 cast alloy was 19.5 HRC, indicating that the hardness was greatly improved when Cu was added. In the case of tensile strength, Cu-added SKD11 cast alloy had lower tensile strength than as-received SKD11, and the tensile strength tended to increase as Cu content increased. After heat treatment, however, tensile strength of as-received SKD11 was significantly increased, whereas in the case of Cu-added SKD11, as the Cu contents increased, the tensile strength increased less and even reduced at 3 wt% Cu. The thermal conductivity of Cu-added SKD11 cast alloy was about 13 W m^-1 K^-1, which was lower than that of the asreceived SKD11 cast alloy (28 W m^-1 K^-1). After the heat treatment, however, the thermal conductivity of as-received SKD11 was reduced, while the thermal conductivity of the SKD11 added with Cu was increased. Thermal conductivity was generally larger with less Cu content, and this tendency became more pronounced after heat treatment.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• Journal of Powder Materials
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• v.14 no.1 s.60
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• pp.38-43
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• 2007

Cu-Zn alloy nano powders were fabricated by the electrical explosion of Zn-electroplated Cu wire along with commercial brass wire. The powders exploded from brass wire were composed mainly of ${\alpha},{\beta},\;and\;{\gamma}$ phases while those from electroplated wires contained additional Zn-rich phases as ${\varepsilon}$, and Zn. In case of Zn-elec-troplated Cu wire, the mixing time of the two components during explosion might not be long enough to solidify as the phases of lower Zn content. This along with the high vapor pressure of Zn appears to be the reason for the observed shift of explosion products towards the high-Zn phases in electroplated wire system.

• Economic and Environmental Geology
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• v.26 no.1
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• pp.41-54
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• 1993

The Ulsan Fe-W deposit, which can be classified as a calcareous skarn deposit, is represented by ore pipe consisting principally of magnetite and lesser amounts of scheelite with minor sulphides, sulphosaits, arsenides, sulpharsenides, etc. At Ulsan mine, metasomatic processes of skarn growth may be divided broadly into two stages based on the paragenetic sequence of calc-silicate minerals and their chemical composition; early and late skarn stages. Early stage has started with the formation of highly calcic assemblages of wollastonite, diopsidic clinopyroxene and nearly pure grossular, which are followed by the formation of clinopyroxenes with salite to ferrosalite composition and grandite garnets with intermediate composition. Based on these calc-silicate assemblages, the temperatures of early skarn formations have been in the ranges of $550^{\circ}$ to $450^{\circ}$. The calc-silicate assemblages formed during the earlier half period of late skarn stage show the enrichment of notable iron and slight manganese, and the depletion of magnesium; clinopyroxenes are hedenbergitic, and grandite garnets are andraditic. The formation temperatures during this skarn stage are inferred to have been in the range of $430^{\circ}$ to $470^{\circ}C$ at low $X_{CO_2}$ by data from fluid inclusions of late andraditic garnets. The later half period of late skarn stage is characterized by the hydrous alteration of pre-existing minerals and the formation of hydrous silicates. The main iron-tungsten mineralization representing prominent deposition of magnetite immediately followed by minor scheelite impregnation has taken place at the middle of early skarn stage, while complex polymetallic mineralization has proceeded during and after the late skarn stage. Various metals and semimetals of Fe, Ni, Co, Cu, Zn, As, Mo, Ag, In, Sn, Sb, Te, Pb and Bi have been in various states such as native metal, sulphides, arsenides, sulphosaits, sulpharsenides and tellurides.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.24-24
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• 2009

ENIG(Electroless Nickel Immersion Gold) is the surface treatment method that is used most widely at fine pitch's SMT and BGA packaging process. In this paper, we have studied the effect of P content variation during ENIG process on those phenomena related to the solder joint. The effect of P content was discussed using the results obtained from FE-SEM, EPMA, EDS and FIB. Finally, it was concluded that the more P-content in Ni layer, the thicker P-rich layer.

• Korean Journal of Materials Research
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• v.23 no.11
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• pp.661-665
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• 2013

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.227-230
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• 2008

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.