• 제목/요약/키워드: Cu-phthalocyanine film

검색결과 36건 처리시간 0.034초

유기 반도체 CuPccp LB초박막의 제작 및 특성 (Fabrication and Properties of Organic Semiconductor CuPccp LB Thin Film)

  • 조민재;쑤양싸이양;이진수;안다현;정치섭
    • 센서학회지
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    • 제28권1호
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    • pp.23-29
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    • 2019
  • A copper tetracumylphenoxy phthalocyanine (CuPccp) thin film was formed on an organic insulator film by Langmuir-Blodgett (LB) deposition for gas sensor fabrication. To increase the reproducibility of film transfer, stearyl alcohol was used as a transfer promoter. The structural properties of the CuPccp layers were optically monitored through attenuated total reflection and polarization-modulated ellipsometry techniques. The average thickness of a single layer of the CuPccp LB film was measured to be 2.5 nm. Despite the role of the transfer promoter, the stability of the layer transfer was not sufficient to ensure homogeneity of the LB film. This was probably due to the presence of aggregates in the molecular structure of the CuPccp LB film. Nevertheless, copper phthalocyanine polymorphism can be greatly suppressed by the LB arrangement, which appears to contribute to the improvement of electrical conductivity. The p-type semiconductor characteristics were confirmed by Hall measurements from the CuPccp LB films.

Electrical Properties of F16CuPC Single Layer FET and F16CuPc/CuPc Double Layer FET

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제8권4호
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    • pp.174-177
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    • 2007
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

유기발광소자내 정공주입층 Copper(II)-phthalocyanine의 결정 및 광원에 따른 Photocurrent 증폭 연구 (Photocurrent Multiplication Process in OLEDs Due to a Crystalline of Hole Injection Layer of Copper(II)-phthalocyanine and a Light Irradiation)

  • 임은주;박미화;윤순일;이기진;차덕준;김진태
    • 한국전기전자재료학회논문지
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    • 제16권7호
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    • pp.622-626
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    • 2003
  • We report the electrical properties of organic light emitting diodes (OLEDs) depending on the crystal structure of hole injection layer of copper(II)-phthalocyanine(CuPc) and the light irradiation the carrier mobility of copper(II)-phthalocyanine(CuPc) of light source. OLEDs were constructed with indium tin oxide(ITO)/CuPc/triphenyl-diamin(TPD)/tris-(8-hydroxyquinoline)aluminum(Alq$_3$)/Al.Photocurrent multiplication of OLEDs was varied by the heat-treatment condition of CuPc thin film and the light irradiation.

Si 기판위에 열증착법으로 제조한 copper phthalocyanine(CuPc) 박막의 구조 및 광전특성 (Structural and photoelectrical properties of copper phthalocyanine(CuPc) thin film on Si substrate by thermal evaporation)

  • 이혜연;정중현;이종규
    • 센서학회지
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    • 제6권5호
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    • pp.407-413
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    • 1997
  • 기판온도 $300^{\circ}C$에서 열증착법에 의해 p형 <100> Si 기판위에 CuPc(Copper Phthalocyanine) 결정 박막을 증착하였다. X선 회절분석으로부터 CuPc 박막은 a-축 방향으로 성장하였음을 알 수 있었다. CuPc분자들이 기판면위에 수직인 CuPc/Si박막의 광전특성을 조사하기 위하여 수직방향의 전류-전압 (I-V) 특성을 기판 Si의 특성과 비교 관찰하였다. 저항성 접촉을 위해 기판인 p형 Si위에 전극으로 Au를 증착시켰다. Au/Si 접합에 빛을 조사한 결과 전류는 증가하지만 광기전력효과는 관찰되지 않았다. p형 반도체인 CuPc 박막과 기판 p-Si의 접합은 장벽을 형성하지 않기 때문에 빛을 조사하지 않았을 때의 I-V 특성은 저항성을 나타낸다. 빛을 조사하였을 때 CuPc/Si 접합의 증가된 광전류는 Si 웨이퍼보다 현저하게 큰 것을 알 수 있다. 따라서 CuPc 층이 600 nm 파장에서의 붉은 빛을 현저하게 흡수하여 광전류에 기여하는 다량의 광캐리어를 형성함을 알 수 있다. CuPc/Si 박막은 $J_{sc}$ (short-circuit photocurrent) $4.29\;mA/cm^{2}$$V_{oc}$ (open circuit photovoltage) 12 mV의 광기전력 특성을 보여준다.

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근접장 마이크로파 현미경을 이용한 Copper(II)-phthalocyanine 박막의 특성 연구 (Characterization of thin film properties of Copper(II)-Phthalocyanine using a near-field scanning microwave microscope)

  • 박미화;이기진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.460-463
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    • 2003
  • We report the microwave reflection coefficient $S_{11}$ of copper(II)-phthalocyanine(CuPc) using a near-field microwave microscope(NSMM) in order to understand the intrinsic electromagnetic properties of organic materials. For a NSMM system, a high-quility microstip resonator coupled with a dielectric resonator was used. The reflection coefficient $S_{11}$ was changed by the preparation conditions of CuPc thin films. We compared the reflection coefficient with crystal phase, surface morphology, UV absorption spectra and x-ray diffraction results.

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결정 성장 조건에 따른 copper(II)-phthalocyanine 박막의 전기전도도 특성 (Conductivity of copper(II)-phthalocyanine thin films due to a grain growth)

  • 박미화;유현준;이기진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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    • pp.132-136
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    • 2004
  • 열 증착 방법을 이용하여 copper(II)-phthalocyanine(CuPc) 박막을 glass 기판 위에 제작하였다. 열처리 조건은 $150^{\circ}C$에서 후열(annealing) 처리 하는 방식과 예열하는 두 가지 방식으로 달리하였다. 제작된 박막의 전기전도도를 평가하기 위해 마이크로웨이브 근접장 효과를 이용한 근접장 현미경(near-field scanning microwave microscope)을 이용하여 비파괴적인 방식으로 CuPc 박막의 반사계수(reflection coefficient)를 측정하였다. CuPc 박막의 전기전도도 특성을 UV 흡수도를 통한 에너지 밴드갭의 shift 현상과 관련지어 설명하고 또한 x-ray diffraction(XRD) data를 통해 박막의 결정 특성과 비교하였다. 박막 표면 특성은 SEM(scanning microscope microscopy)을 통해 관측하였다. 열처리 조건에 따른 CuPc 박막의 전기전도도 특성은 후열 처리한 박막의 경우 예열 처리한 박막보다 전기 전도 특성이 향상되었음을 관측할 수 있었다.

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$F_{16}CuPC$를 활성층으로 사용한 유기전계효과트랜지스터의 바이폴라 특성연구 (Bipolar Characteristics of Organic Field-effect Transistor Using F16CuPc with Active Layer)

  • 이호식;박용필;천민우;김태곤;김영표
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.303-304
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    • 2009
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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F16CuPc를 이용한 Field Effect Transistor의 전기적 특성 연구 (Electrical Properties of Field Effect Transistor using F16CuPc)

  • 이호식;박용필;천민우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.389-390
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    • 2008
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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F16CuPc를 활성층으로 사용한 FET의 특성 연구 (Properties of FET using Activative Materials with F16CuPc)

  • 이호식;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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    • pp.43-44
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    • 2009
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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F16CuPc를 이용한 FET의 전기적 특성 연구 (Electrical Properties of FET using F16CuPc)

  • 이호식;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.504-505
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    • 2008
  • We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

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