• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.141-141
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• 2010

ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. Photoluminescence excitation spectra originated from $Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with $^4T_1{\rightarrow}^6A_1$ transition of $Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.609-609
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• 2013

나노선은 대표적인 일차원 나노구조로 높은 부피-표면적 비율과, 조절 가능한 밴드갭 에너지, 뛰어난 광학적/전기적 특성으로 인해 다양한 잠재적 응용처를 가지며, 많이 연구되고 있다. 특히 ZnO 나노선은 대표적인 광촉매로, 높은 감광성과 높은 부피-표면적 비율 등의 특징을 가지지만, 상대적으로 넓은 밴드갭 에너지 때문에 가시광선 영역을 사용하지 못하는 단점이 있다. 본 연구에서는 CuS 나노입자/ZnO 나노선 이종구조를 간단한 두 가지의 방법으로 합성하였다. ZnO 나노선은 간단한 수열합성 방법으로 합성하였고, 그 위에 CuS 나노입자를 successive ionic layer adsorption and reaction (SILAR) 방법으로 증착하였다. 합성된 나노 구조는 기존의 ZnO 구조와는 달리 가시광 영역에서도 향상된 광촉매 특성을 보였으며, 이는 ZnO와 CuS사이의 interfacial charge transfer (IFCT)에서 기인한 것이다. SEM, TEM, XRD를 통해 CuS/ZnO 이종구조의 형태와 결정구조, 구성성분을 분석할 수 있었고, Acid Orange 7의 광분해 실험을 통해 향상된 광촉매 특성을 확인 할 수 있었다.

• Journal of Environmental Science International
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• v.8 no.3
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• pp.411-417
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• 1999

The interfacial chemical behavior, lattice exchange and dissolution, of $FeS_{(S)}$ as one of the important sulfide minerals was studied. Emphases were made on the surface characterization of hydrous $FeS_{(S)}$, the lattice exchange of Cu(II) and $FeS_{(S)}$, and its effect on the dissolution of $FeS_{(S)}$, and also affect some organic ligands on that of both Cu(II) and $FeS_{(S)}$. Cu(II) which has lower sulfide solubility in water than $FeS_{(S)}$ undergoes the lattice exchange reaction when Cu(II) ion contacts $FeS_{(S)}$ in the aqueous phase. For heavy metals which have higher sulfide solubilities in water than $FeS_{(S)}$, these metal ions were adsorbed on the surface of $FeS_{(S)}$. Such a reaction was interpreted by the solid solution formation theory. Phthalic acid(a weak chelate agent) and EDTA(a strong chelate agent) were used to demonstrate the effect of organic lignads on the lattice exchange reaction between Cu(II) and $FeS_{(S)}$. The $pH_{zpc}$ of $FeS_{(S)}$ is 7 and the effect of ionic strength is not showed. It can be expected that phthalic acid has little effect on the lattice exchange reaction between Cu(II) and $FeS_{(S)}$. whereas EDTA has very decreased the removal of Cu(II) and $FeS_{(S)}$. This study shows that stability of sulfide sediments was predicted by its solubility. The pH control of the alkaline-neutralization process to treat heavy metal in wastewater treatment process did not needed. Thereby, it was regarded as an optimal process which could apply to examine a long term stability of marshland closely in the treatment of heavy metal in wastewater released from a disussed mine.

• Current Photovoltaic Research
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• v.10 no.2
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• pp.39-48
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• 2022

A Se-containing Cu/SnSe₂/ZnSe precursor was employed to introduce S to the precursor to form Cu₂ZnSn(S,Se)₄ (CZTSSe) film. The morphology of CZTSSe films strongly varied with two different pre-annealing environments: S and N₂. The CZTSSe film with S pre-annealing showed a dense morphology with a smooth surface, while that with N₂ pre-annealing showed a porous film with a plate-shaped grains on the surface. CuS and Cu₂Sn(S,Se)₃ phases formed during the S pre-annealing stage, while SnSe and Cu₂SnSe₃ phases formed during the N₂ pre-annealing stage. The SnSe phase formed during N₂ pre-annealing generated SnS₂ phase that had plate shape and severely aggravated the morphology of CZTSSe film. The power conversion efficiency of the CZTSSe solar cell with S pre-annealing was low (1.9%) due to existence of Zn(S.Se) layer between CZTSSe and Mo substrate. The results indicated that S pre-annealing of the precursor was a promising method to achieve a good morphology for large area application.

• Journal of Energy Engineering
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• v.5 no.1
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• pp.65-71
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• 1996

Decomposition reaction of methanol was conducted on Ni-Cu/SiO$_2$catalysts with several variables. Variables used in this study are S.V(Space Velocity), partial pressure of methanol, reaction temperature, and composition rate of Ni-Cu. The range of S.V is 10,000-30,000h$\^$-1/, the temperature range is 150-400$^{\circ}C$ and values of Cu/(Ni＋Cu) are 0, 0.25, 0.5, 0.75, and 1. Over Ni/SiO$_2$, and Ni-Cu/SiO$_2$, the conversion rate of decomposition reaction of methanol arrived at 100% with increasing of temperature. At this time the selectivity of CO on Ni/SiO$_2$, was suddenly decreased, but on Ni-Cu/SiO$_2$, it was still sustained highly. The main products of reaction were CO and H$_2$, and by-products were CO$_2$ and CH$_4$mainly.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.132-132
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• 2000

Cu는 Al에 비하여 낮은 저항(1.8 $\mu$$\Omega$-cm)과 높은 EM 저항성을 가지고 있어 미래의 고속 ULSI 배선물질로 그 중요성이 더욱 증가되고 있으며, 현재까지 많은 연구가 진행되고 있다. 따라서, 본 논문에서는 이러한 방법들을 고려하여 CVD Cu의 문제점인 낮은 성장률의 개선과 Cu 박막의 특성을 향상하고자 수소 플라즈마 공정을 이용하여 plasma 전처리가 초기 Cu 핵생성에 미치는 영향에 대하여 연구하였다. 본 실험에 사용된 장비는 Cu RPCVD/MOCVD이다. 초기 Cu 핵의 생성에 있어서의 수소 플라즈마의 효과를 조사하기 위하여 다음과 같은 3가지의 방법으로 행하였다. 첫 번째는 Cu 박막 형성에서 플라즈마를 사용하지 않은 방법, 두 번째는 플라즈마 전처리공정을 행한 뒤, Cu 박막 증착시 플라즈마는 사용하지 않은 방법, 세 번재는 플라즈마 전처리공저을 행한 뒤 Cu 증착시에도 플라즈마를 사용한 방법이다. 이 세가지 방법의 핵생성 차이를 분석하기 위해서 각각 10초, 20초, 40초 증착시킨 후 grain의 크기와 개수를 비교하였다. 또한 플라즈마의 power에 따른 Cu 핵생성율도 조사하였다. 수소 전처리동안 working pressure는 10분 동안 1 torr로 유지되었으며 substrate의 온도는 20$0^{\circ}C$, r.f.power는 100watt로 설정하였다. Cu RPCVD의 증착조건은 r.f.power는 10watt, substrate의 온도는 20$0^{\circ}C$, gas pressure는 1 torr, Ar carrier gas는 50sccm, hydrogen processing gas는 100sccm, bubbler 온도는 4$0^{\circ}C$, gas line의 온돈느 6$0^{\circ}C$, shower head의 온도는 $65^{\circ}C$로 설정하였다. 증착된 Cu 박막은 SEM, XRD, AFM를 통해 제작된 박막의 특성을 비교.분석하였다. 초기 plasma 처리를 한 경우에는 그림 1에서와 같이 현저히 증가한 초기 구리 입자들이 관측되었으며, 이는 도상 표면에 활성화된 catalytic site의 증가에 기인한다고 보여진다. 이러한 특성은 Cu films의 성장률을 향상시키고, 또한 voids를 줄여 전기적 성질 및 surface morphology를 향상시키는 것으로 나타났다.

• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.732-739
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• 2001

산업부산자원으로부터 유입되는 중금속이 시멘트 수화반응에 미치는 영향에 대하여 연구하였다. 출발물질은 순수시약을 사용하여 $C_3$S와 $C_2$S 조성으로 배합하고 여기에 Zn, Cu, Cr의 중금속 산화물을 1000ppm, 2000ppm, 3000ppm 첨가하여 150$0^{\circ}C$에서 1시간 소결하여 중금속의 고용분배, 결정구조, 용출상태 그리고 수화열을 관찰하였다. 중금속중 Zn는 $C_3$S와 간극질에 집중 고용되고 Cu는 간극물질에 집중 고용되며 Cr은 $C_3$S와 $C_2$S에 집중 고용되었다. 광학현미경 및 XRD 관찰결과 중금속 함량별로 $C_3$S와 $C_2$S의 결정상에는 큰 영향이 없는 것으로 나타났다. 그리고 7일간 수화시 Zn는 40~50%, Cu와 Cr은 전량 용출되었다. Conduction calorimeter 분석결과 중금속 함량별 변화에도 $C_3$S와 $C_2$S 수화열에는 차이가 없었다.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.63-69
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• 2007

We investigated interconnection processes using Cu vias for MEMS sensor packages. Ag paste layer was formed on a glass substrate and used as a seed layer for electrodeposition of Cu vias after bonding a Si substrate with through-via holes. With applying electrodeposition current densities of $20mA/cm^2\;and\;30mA/cm^2$ at direct current mode to the Ag paste seed-layer, Cu vias of $200{\mu}m$ diameter and $350{\mu}m$ depth were formed successfully without electrodeposition defects. Interconnection processes for MEMS sensor packages could be accomplished with Ti/Cu/Ti line formation, Au pad electrodeposition, Sn solder electrodeposition and reflow process on the Si substrate where Cu vias were formed by Cu electrodeposition into through-via holes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Journal of Powder Materials
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• v.19 no.5
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• pp.362-366
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• 2012

We report the effect of the chain length of carboxylic acid on the photoluminescence(PL) of $CuInS_2$/ZnS nanocrystals. $CuInS_2$/ZnS nanocrystals with emission wavelength ranging from 566 nm through 583 nm were synthesized with zinc acetate and carboxylic acids with various chain length. In this study, $CuInS_2$/ZnS nanocrystals prepared using long chain carboxylic acid showed more improved PL intensity. The origin of strong photoluminescence of the nanocrystals prepared with zinc acetate and long chain carboxylic acid was ascribed to improved size distribution due to strong reactivity between long chain carboxylic acid and zinc acetate.