• Korean Journal of Veterinary Research
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• v.42 no.2
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• pp.191-199
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• 2002

In this study, eight primers were used to detect genetic variability and phylogenetic relationships among the eighteen Salmonella strains by the arbitrary-primed PCR(AP-PCR) techniques. Five strains of Salmonella typhimurium, four strains of S entertidis, three strains of S choleraeuis, three strains of S gallinarum and three strains of S pullorum were typed by AP-PCR. The number of AP-PCR bands detected per each primer varied from 39 to 52, with an average of 43.6. A total of 349 AP-PCR bands were generated and among them, 185 bands(53.0%) were polymorphic. Among the primers, GEN 703 and GEN 708 primer showed a high level of polymorphism with 0.682 and 0.676, respectively. But GEN 603, GEN 604 and GEN 607 primer showed a low level of polymorphism with 0.404, 0.460 and 0.472, respectively. Therefore, the these primers will be the most effective for AP-PCR analysis of Salmonella strains. The level of polymorphism of S typhimurium CU 2001(0.77) was similar to that of S typhimurium CU 2002(0.77) and lower than those of other strains such as S typhimurium CU 2003(0.63), S typhimurium ATCC 14028(0.50) and S typhimurium CU 2004(0.43). The level of polymorphism of S enteritidis ATCC 13076(0.83) was similar to that of S enteritidis CU 2005(0.83) and lower than those of other strains such as S enteritidis CU 2006(0.63) and S enteritidis CU 2007(0.58). The level of polymorphism of S choleraeuis CU 2009(0.67) was similar to that of S choleraeuis CU 2010(0.67) and higher than those of other strains such as S choleraeuis CU 2008(0.53). The level of polymorphism of S gallinarum CU 2011(0.70) was similar to that of S gallinarum CU 2012(0.70) and higher than those of other strains Such as S gallinarum ATCC 9184(0.60). The level of polymorphism of S pullorum CU 2013(0.80) was similar to that of S pullorum CU 2014(0.80) and higher than those of other strains such as S pullorum No 11(0.53). Therefore, the AP-PCR analysis will be used a powerful tool for estimating genetic variation and phylogenetic relationships among Salmonella strains.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.45-49
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• 2006

The changes in the optical anisotropy of the clean Cu(110) and the oxygen covered Cu(110) surfaces due to Cu growth have been studied by reflectance difference spectroscopy(RDS). We have monitored the growth mode of Cu atoms on Cu(110) and Cu(110)-(2XlO surfaces at 250K and checked the surfactant effect of oxygen during the Cu growth. For Cu grow on Cu(110) and Cu(110)-(2Xl)O surface at low temperature, we observed evidence for the layer-by-layer growth mode with change of 4.25eV peak intensity.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.51.1-51.1
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• 2010

이번 연구에서는 저온 용액공정을 이용하여p-type 반도체로 많이 사용되고 있는 $Cu_xS$를 기판 위에 증착하여 그 특성을 분석하였다. $Cu_xS$는 x의 값에 따라 다섯가지의 결정구조를 가지는데 CuS, $Cu_{1.75}S$, $Cu_{1.8}S$, $Cu_{1.95}S$, $Cu_2S$ 들이 그것이다. 태양전지에서 p형 반도체로 중요한 역할을 담당하고 있는 $Cu_xS$는 cell에서 사용되었을 때 energy bandgap이 1.2-2.5eV일 때 가장 좋은 특성을 나타낸다. 이번 연구에서는 특히 조성에 따라서 물리적, 광학적으로 어떤 특성을 나타내는지에 대하여 XRD, SEM, Uv-vis 등의 분석을 해보았다. XRD의 경우 농도가 높아질수록 peak의 intensity는 커지지만 어느 농도 이상부터는 Cu가 Oxide화 되는 것을 관찰할 수 있었다. SEM image의 경우에는 조성에 따른 포면의 상태를 분석해보았다. 조성에 따른energy bandgap을 알아보기 위해서는 Uv-vis을 측정하였으며 이를 이용하여 증착된 박막의 투과도 역시 함께 분석해보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.109-112
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• 1995

CuInS$_2$thin film was prepared by heat treatment at vacuum 10$\^$-3/ Torr of S/In/Cu stacked layer which was deposited by sequential. And so, the polycrystalline CuInS$_2$with chalcopyrite structure was well made at heat treatment temperature of 250$^{\circ}C$ and heat treatment time of 60 min. Single phase of CuInS$_2$was formed from Cu/In composition ratio of 0.84 to 1.3. p conduction type of CuInS$_2$thin film was appeared from Cu/In competition ratio of 0.99. The highest resistivity of CuInS$_2$with p type was 1.608${\times}$10$^2$$\Omega$cm at Cu/In composition ratio of 0.99 and The lowest resistivity was 5.587${\times}$10$\^$-2/$\Omega$cm at Cu/In composition ratio of 1.3.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.170-173
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• 2006

[ $CuInS_2$ ] filims were appeared from 0.84 to 1.27 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated, Also when Cu/In composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). And lattice constant (a) of and grain size of the film tin s ambient were appeared a little larger than those in only Vacuum The films in S ambient were p-type with resistive of around $10^{-1}{\Omega}cm$ and optical energy band gaps of the films in S ambient were appeared a little larger than those in only Vacuum. Analysis of the optical energy band gap of $CuInS_2$ thin films a value of 1.53eV.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.8
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• pp.17-23
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• 2002

The SrS:CuCl TFEL devices were fabricated by electron-beam deposition and the luminescent characteristics of the fabricated SrS:CuCl TFEL devices were studied. The SrS powder was used as the host materials and 0.05 ~ 0.6 at% of CuCl powder was added as the luminescent center. The deposition conditions of substrate temperature, electron beam current, and deposition rate were 500 $^{\circ}C$ , 20 ~ 40 mA, and 5 ~ 10 /sec, respectively The total thickness of the phosphor layer deposited was 6000 . The blue emission at low CuCl concentrations was observed from the luminescent centers of monomer, dimer, trimer, and tetramer, The bright greenish blue emission at high CuCl concentrations was observed from the dimer and trimer luminescent centers. The maxium luminance was observed from the SrS:CuCl TFEL devices doped with 0.2 at% of CuCl concentration and the threshold voltage, luminance(L$_{40}$ ), efficiency(η$_{20}$) and CIE coordinate obtained were 55 V, 728 cd/$m^2$, 0.49 lm/w, and (0.21, 0.33), respectively..

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.83-87
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• 1994

The polycrystalline $CuInS_{2}$ thin films were prepared by annealing in vacuum and extra S supply of S/In/Cu stacked layers, which were deposited by sequential electron beam evaporation(EBE). n-type $CuInS_{2}$ was fabricated in vacuum with chalcopyrite structure and its minimum resistivity was $142{\Omega}Cm$. Also, p-type $CuInS_{2}$ was made in extra S supply with chalcopyrite structure and its minimum resistivity was $137{\Omega}Cm$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1152-1157
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• 1994

The glasses were prpared in the system CuI-CuS12TS-CuS12TO-MoOS13T by rapid quenching technique. These glasses have high ionic conductivities at 2$0^{\circ}C$ in the range of 10S0-1T[S/m], and the conductivities increase with increasing CuI and CuS12TS content. The value of activation energy for dielectric relaxation is nearly identical with that for conductivity. The cole-Cole parameter $\beta$ for representation of the distribution of dielectric relaxation times varies the range from 0.92 to 0.96. This parameter has a weak dependence on the composition of glass, and is independent of temperature. The correlation factors P for the glasses shows from 1.1 to 1.7.

• Journal of Conservation Science
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• v.32 no.3
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• pp.313-320
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• 2016

The aim of this study was to obtain information on the ancient material of cast bronze through an investigation of the microstructure and impurity characteristics of the casting. Three Koryo bronze coins were analyzed using an optical microscope, scanning electron microscope, and electron dispersive X-ray analyses were used to determine the composition of the specimens. The three coins had 4 phases: ${\alpha}phase$, ${\delta}phase$, Pb, and impurities ($Cu_2S$). $Cu_2S$ was found to exist near Pb or in ${\delta}phase$. $Cu_2S$ is the inter mediate product of copper ore refining. Therefore, the copper ore was not completely refined. To find out the characteristic of $Cu_2S$, we melt 1)Koryo bronze coin and 2)$Cu_2S$ and Pb powder at 1273 K. The reaction between $Cu_2S$ and Pb at 1273 K yielded fine Cu and black gas, which was identified to be PbS and is presented below: $Cu_2S+Pb{\rightarrow}PbS{\uparrow}+2Cu$.

• The Journal of the Korea Contents Association
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• v.2 no.3
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• pp.146-151
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• 2002

The $Ca_{1-x}$Sr$_{x}$S:CuCl TFEL devices were fabricated by electron-beam deposition system and luminescent characteristics of the TFEL devices were studied. The SrS and CaS powders were mixed to form $Ca_{1-x}$Sr$_{x}$S host materials and 0.2 at% of CuCl was added as the activator. The luminance(lao) and peak emission wavelength of CaS:CuCl TFEL devices were 9.5 cd/m$^2$ and 492 nm, respectively. The luminance(L$_{30}$) and peak emission wavelength of SrS:CuCl TFEL devices were 633 cd/m$^2$ and 500 nm, respectively. It seems that the addition of CaS into the SrS host material generates blue shift of the EL emission characteristics but reduces the luminance and the luminous efficiency of the $Ca_{1-x}$Sr$_{x}$S:CuCl TFEL devices drastically.