• YAKHAK HOEJI
• /
• v.30 no.2
• /
• pp.79-86
• /
• 1986

In order to study 2-formylpyridine dithiocarbohydrazones (DTCH's) and their Cu(II) chelates as potential effective antimicrobial agents, twelve new compounds of six DTCH's and their Cu(II) chelates were synthesized. The compositions of Cu(II) chelates were determined on the basis of the data obtained from elemental analysis, electronic and IR spectrophotometry, and other method. They were tested for antimicrobial activity in vitro against a gram-positive, seven gram-negative bacterial species and three fungal species. DTCH's exhibited high antibacterial activity against the gram-positive Staphylococcus aureus, but low activity against the various gram negative bacterial species. In contrast to DTCH'S, their Cu(II) chelates exhibited higher antibacterial activity against St. aureus, but weaker, if any, activity against the gram-negative bacterial species. Both DTCH's and their Cu(II) chelates showed relatively potent antifungal activity against Cryptococcus neoformans, but weak activity against Candida albicans and Candida pseudotropicalis.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1584-1586
• /
• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

• Journal of Welding and Joining
• /
• v.20 no.6
• /
• pp.59-59
• /
• 2002

Sn-Ag-Cu solder is known as most competitive in many kinds of Pb-free solders. In this study, effects of solderability with plated layers such as Cu, Cu/Sn, Cu/Ni and Cu/Ni/Au were investigated. Sn-3.5Ag-0.7Cu solder balls were reflowed in commercial reflow machine (peak temp. : 250℃ and conveyer speed : 0.6m/min). In wetting test, immersion speed was 5mm/sec., immersion time 5sec., immersion depth 4mm and temperature of solder bath was 250℃. Wettability of Sn-3.5Ag-0.7Cu on Cu, Cu/Sn (5㎛), Cu/Ni (5㎛), and Cu/Ni/Au (5㎛/500Å) layers was investigated. Cu/Ni/Au layer had the best wettability as zero cross time and equilibrium force, and the measured values were 0.93 sec and 7mN, respectively. Surface tension of Sn-3.5Ag-0.7Cu solder turmed out to be 0.52N/m. The thickness of IMC is reduced in the order of Cu, Cu/Sn, Cu/Mi and Cu/Ni/Au coated layer. Shear strength of Cu/Ni, Cu/Sn and Cu was around 560gf but Cu/Ni/Au was 370gf.

• Journal of Sensor Science and Technology
• /
• v.15 no.5
• /
• pp.323-327
• /
• 2006

Manganese, copper and chlorine-doped ZnS phosphors (ZnS:Mn,Cu,Cl) were synthesized through solid-state reaction. Manganese was added in the range of amount $1.4{\sim}5.3$ mol % to ZnS phosphors containing 0.2 or 1.0 mol % of copper and a small amount of chlorine. As-synthesized phosphors showed a spherical morphology with a mean size of ${\sim}20\;{\mu}m$ and structural properties of Wurtzite, which were identified by SEM and XRD, respectively. Optical properties of ZnS:Mn,Cu,Cl synthesized with various concentrations of activators were analysed by both of PL and EL spectra. Samples mainly showing only 580 nm-orange emission by 380 nm-UV excitation gave different EL spectra of blue, green, and orange emissions at 450, 480 and 580 nm, respectively, depending on concentrations of $Cu^{2+}$ and $Mn^{2+}$.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.2
• /
• pp.73-76
• /
• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• Transactions of Materials Processing
• /
• v.16 no.5 s.95
• /
• pp.375-380
• /
• 2007

The bimetals of home appliances are mainly manufactured by cladding process and these are almost consisted with Cu alloy and Ni alloy. But it is very difficult to clad these alloys, because the brittle $Cu_3O_4$ oxide film formed easily on Cu alloy surface during cladding process. Clad rolling and heat treatment processes were applied for the development of bimetals by using the Ni alloy and the 3 types of Cu alloys. Optical microstructure, micro-hardness, specific resistance, and deflection and line profile of newly processed bimetals specimens were observed and measured in this paper. Inter-diffusion was observed between Cu and Ni element in the interface of heat treated Cu alloy and Ni alloy clad material. The C1220 and Invar36 clad material showed the best property of deflection among the 3 kind of clad materials.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.9
• /
• pp.2813-2817
• /
• 2014

A new magnetic semiconductor material was synthesized to enable separation after a liquid-type photocatalysis process. Core@shell-structured $CuFeS_2@TiO_2$ magnetic nanoparticles were prepared by a combination of solvothermal and wet-impregnation methods for photocatalysis applications. The materials obtained were characterized using X-ray diffraction, transmission electron microscopy, ultraviolet-visible, photoluminescence spectroscopy, Brunauer-Emmett-Teller surface area measurements, and cyclic voltammetry. This study confirmed that the light absorption of $CuFeS_2$ was shifted significantly to the visible wavelength compared to pure $TiO_2$. Moreover, the resulting hydrogen production from the photo-splitting methanol/water solution after 10 hours was more than 4 times on the core@shell structured $CuFeS_2@TiO_2$ nanocatalyst than on either pure $TiO_2$ or $CuFeS_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.81-84
• /
• 2004

본 논문은 스크린 프린트 방식을 이용하여 두께 $18{\mu}m$의 ZnS:(Cu,Al) 필름을 제조하여 미세구조와 결정성을 분석하고 형광체로써의 특성을 평가하였다. 영상획득에는 포항 가속기 연구소의 싱크로트론을 이용하였으며 CMOS 영상 센서를 사용하여 DR의 간접방식을 구현하였다. 특성 평가를 위해 SEM 측정, 발광 강도 측정을 하였고, 단색광(Beam size $5mm{\times}2mm$)을 사용하여 test phantom 영상과 물고기 영상을 획득하였다. 획득한 영상의 평가를 위해서 test phantom 영상의 MTF 측정을 하였다 제조된 ZnS:(Cu,Al) 필름의 표면은 육방정계 구조를 가졌으며, 5lp/mm는 73.8%, 10lp/mm는 38.9%, 15lp/mm는 15.4%, 20lp/mm는 12.2%의 MTF를 가졌다. 물고기 영상을 통하여 ZnS:(Cu,Al) 필름을 이용한 고해상도 미세구조영상 획득의 가능성을 확인하였다.

• Journal of Hydrogen and New Energy
• /
• v.34 no.6
• /
• pp.785-791
• /
• 2023

Copper sulfide (Cu_xS) has been extensively utilized as a counter electrode (CE) material for quantum dot solar cells (QDSCs) due to its exceptional catalytic activity for polysulfide electrolytes. The typical fabrication method of Cu₂S CEs based on brass substrate is dangerous, involving the use of a highly concentrated hydrochloric acid solution in a relatively high temperature. In contrast, electroplating presents a safer alternative by employing a less acidic solution at a room temperature. In addition, the electroplating method increases the probability of obtaining CEs of consistent quality compared to the brass method. In this study, the optimized electroplating cycle for CuS CEs in QDSCs has been studied for the highly efficient photovoltaic performances. The QDSCs, featuring electroplated CuS CEs, achieved an impressive efficiency of 7.18%, surpassing the conventional method employing brass CEs, which yielded an efficiency of 6.62%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.4
• /
• pp.350-356
• /
• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.